2SK3679-01MR [FUJI]

STD LQg MOSFET ; STD LQG MOSFET\n
2SK3679-01MR
型号: 2SK3679-01MR
厂家: FUJI ELECTRIC    FUJI ELECTRIC
描述:

STD LQg MOSFET
STD LQG MOSFET\n

文件: 总1页 (文件大小:32K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Fuji PowerMOSFET SuperFAP-G series Target Specification  
PRELIMINARY  
2SK3679-01MR (900V/1.58/9A)  
1) Package  
TO-220F  
2) Absolute Maximum Ratings (Tc=25unless otherwise specified)  
Symbols  
Ratings  
Items  
Units  
VDS  
ID  
900  
Drain-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current  
V
A
A
V
±9  
ID(pulse)  
VGS  
±36  
±30  
Gate-Source Voltage  
Repetitive and Non-Repetitive  
Maximum Avalanche Current  
Non-Repetitive  
Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
IAR  
9
A
EAS  
287.7  
mJ  
*1  
*2  
20  
5
95  
dVDS/dt  
dV/dt  
PDc=25℃  
PD @Ta=25℃  
Tch  
kV/us  
kV/us  
W
Peak Diode recovery dV/dt  
Maximum Power Dissipation  
2.16  
W
150  
Operating and Storage  
Temperature range  
Tstg  
-55 +150  
3)Electrical Characteristics (Tch=25unless otherwise specified)  
Items  
Symbols  
BVDSS  
Test Conditions  
min.  
900  
3.0  
---  
typ.  
---  
max. Units  
ID=250uA  
VGS=0V  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
---  
5.0  
25  
V
V
VGS(th)  
ID=250uA  
VDS=900V  
VGS=0V  
VDS=VGS  
Tch=25℃  
Tch=125℃  
VDS=0V  
---  
---  
μA  
μA  
nA  
IDSS  
Zero Gate Voltage Drain Current  
---  
---  
250  
100  
IGSS  
VGS=±30V  
Gate-Source Leakage Current  
---  
---  
R (on)  
DS  
ID=4.5A  
Drain-Source On-State Resistance  
VGS=10V  
---  
---  
1.58  
Ω
Ciss  
Coss  
Crss  
Qg  
Qgs  
Qgd  
IAV  
VDS=25V  
VGS=0V  
Input Capacitance  
---  
---  
---  
---  
---  
---  
12  
1200  
140  
7
32  
7
---  
---  
---  
---  
---  
---  
---  
Output Capacitance  
pF  
Reverse Transfer Capacitance  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain (Miller) Charge  
Avalanche Capability  
f=1MHz  
Vcc=450V  
ID=9A  
nC  
VGS=10V  
7
L=6.51mH  
Tch=25℃  
---  
A
V
VSD  
IF=9A,VGS=0V,Tch=25℃  
Diode Forward On-Voltage  
---  
1.0  
1.5  
4) Thermal Characteristics  
Items  
Channel to Case  
Channel to Ambient  
Symbols  
Rth(ch-c)  
Rth(ch-a)  
Test Conditions  
min.  
typ.  
max. Units  
1.316  
58.0  
/W  
/W  
*1 L=6.51mH,Vcc=90V  
*2 I -I ,-di/dt=50A/ s,Vcc BV ,Tch 150 C  
µ
°
F
D
DSS  
NAME  
APPROVED  
DATE  
Sep.-10-'02  
Fuji Electric Co.,Ltd.  
DRAWN  
CHECKED Sep.-10-'02  
MT5F12613 1/1  
REVISIONS  
MA4LE  

相关型号:

2SK367GR

TRANSISTOR | JFET | N-CHANNEL | 2.6MA I(DSS) | SPAK
ETC

2SK367O

TRANSISTOR | JFET | N-CHANNEL | 600UA I(DSS) | SPAK
ETC

2SK367Y

TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | SPAK
ETC

2SK367_07

Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications
TOSHIBA

2SK368

N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER, CONSTANT CURRENT APPLICATIONS)
TOSHIBA

2SK368-GR

TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, 2-3F1B, TO-236MOD, SC-59, 3 PIN, FET General Purpose Small Signal
TOSHIBA

2SK368-O

TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, 2-3F1B, TO-236MOD, SC-59, 3 PIN, FET General Purpose Small Signal
TOSHIBA

2SK368-Y

TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, 2-3F1B, TO-236MOD, SC-59, 3 PIN, FET General Purpose Small Signal
TOSHIBA

2SK3680-01

N-CHANNEL SILICON POWER MOSFET
FUJI

2SK3680-01_04

N-CHANNEL SILICON POWER MOSFET
FUJI

2SK3681-01

N-CHANNEL SILICON POWER MOSFET
FUJI

2SK3682-01

N-CHANNEL SILICON POWER MOSFET
FUJI