2SK3526-01L [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3526-01L |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3526-01L,S,SJ
200304
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
P4
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
600
Unit
V
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
A
ID
±8
±32
±30
8
A
ID(puls]
VGS
V
Drain(D)
A
IAR
*2
*1
mJ
kV/µs
kV/µs
W
EAS
145.6
20
dVDS/dt *4
dV/dt
*3
5
Gate(G)
°C
°C
PD Ta=25
Tc=25
Tch
1.67
Source(S)
135
+150
-55 to +150
Operating and storage
temperature range
°C
°C
Tstg
<
*1 L=4.2mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch 150°C
=
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
*4 VDS 600V
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Test Conditions
Item
µ
ID= 250 A
VGS=0V
VDS=VGS
Drain-source breakdown voltaget
Gate threshold voltage
600
V
µ
ID= 250 A
3.0
5.0
25
V
Tch=25°C
µA
VDS=600V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
VDS=480V VGS=0V
VGS=±30V VDS=0V
IGSS
RDS(on)
gfs
10
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
ID=3A VGS=10V
0.93
1.20
Ω
3
6
750
100
S
ID=3A VDS=25V
VDS=25V
Ciss
1130
150
pF
Coss
Crss
td(on)
tr
VGS=0V
Output capacitance
f=1MHz
4.0
6.0
Reverse transfer capacitance
Turn-on time ton
ns
VCC=300V ID=3A
14
9
21
14
VGS=10V
24
7
36
td(off)
tf
Turn-off time toff
RGS=10 Ω
10.5
30
20
QG
VCC=300V
ID=6A
nC
Total Gate Charge
8.5
13
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
5.5
8.5
VGS=10V
8
L=4.2mH Tch=25°C
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
1.00
0.7
1.50
VSD
trr
Qrr
IF=6A VGS=0V Tch=25°C
IF=6A VGS=0V
-di/dt=100A/µs
V
µs
µC
3.5
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.926
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
75.0
°C/W
1
2SK3526-01L,S,SJ
FUJI POWER MOSFET
Characteristics
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
Allowable Power Dissipation
PD=f(Tc)
18
16
14
12
10
8
200
150
100
50
20V
10V
8V
7.5V
7.0V
6
4
VGS=6.5V
2
0
0
0
25
50
75
100
125
150
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
VDS [V]
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
10
1
0.1
0.1
0.1
1
10
0
1
2
3
4
5
6
7
8
9
10
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS=6.5V
7.0V
7.5V
8V
10V
20V
max.
typ.
0
2
4
6
8
10
12
14
16
18
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [°C]
2
2SK3526-01L,S,SJ
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
Typical Gate Charge Characteristics
VGS=f(Qg):ID=3A, Tch=25°C
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
24
22
20
18
16
14
12
10
8
Vcc= 120V
300V
max.
min.
480V
6
4
2
0
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
Tch [°C]
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
100
10
1
10n
1n
Ciss
100p
10p
1p
Coss
Crss
0.1
10-1
100
101
102
103
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
VDS [V]
Typical Switching Characteristics vs. ID
Maximum Avalanche Energy vs. starting Tch
EAS=f(starting Tch):Vcc=60V
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
350
IAS=4A
IAS=5A
300
250
200
150
100
50
102
101
100
tr
td(off)
IAS=8A
tf
td(on)
0
0
25
50
75
100
125
150
100
101
starting Tch [°C]
ID [A]
3
2SK3526-01L,S,SJ
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=60V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
Outline Drawings (mm)
Type(L)
Type(S)
Type(SJ)
4
1
2
3
1
2
3
4
1
2
3
1
2 3
http://www.fujielectric.co.jp/denshi/scd/
4
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