2SK3527 [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3527 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3527-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
600
Unit
V
Drain-source voltage
Equivalent circuit schematic
V
VDSX *5
ID
600
±17
±68
±30
17
A
Continuous drain current
Pulsed drain current
A
ID(puls]
VGS
Drain(D)
V
Gate-source voltage
A
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
IAR
*2
*1
mJ
kV/µs
kV/µs
W
EAS
412
20
dVDS/dt *4
dV/dt
Gate(G)
*3
5
Source(S)
°C
°C
PD Ta=25
2.50
Tc=25
220
+150
-55 to +150
Operating and storage
temperature range
Tch
Tstg
<
°C
°C
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
*1 L=2.62mH, Vcc=60V *2 Tch 150°C
=
=
=
=
<
*4 VDS 600V *5 VGS=-30V
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Test Conditions
Item
µ
ID= 250 A
VGS=0V
VDS=VGS
V
Drain-source breakdown voltaget
Gate threshold voltage
600
µ
ID= 250 A
V
3.0
5.0
25
Tch=25°C
µA
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V
VDS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
IGSS
RDS(on)
gfs
10
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
ID=8.5A VGS=10V
0.29
0.37
Ω
10
20
2280
290
16
S
ID=8.5A VDS=25V
VDS=25V
Ciss
3420
435
24
pF
Coss
Crss
td(on)
tr
VGS=0V
Output capacitance
f=1MHz
Reverse transfer capacitance
Turn-on time ton
ns
VCC=300V ID=8.5A
VGS=10V
26
39
37
56
78
117
19
td(off)
tf
Turn-off time toff
RGS=10 Ω
13
54
81
QG
VCC=300V
ID=17A
nC
Total Gate Charge
15
23
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
20
30
VGS=10V
17
L=2.62mH Tch=25°C
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
0.93
1.50
VSD
trr
Qrr
IF=17A VGS=0V Tch=25°C
IF=17A VGS=0V
-di/dt=100A/µs
V
0.7
µs
µC
10.0
Tch=25°C
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.568
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
50.0
°C/W
1
2SK3527-01
FUJI POWER MOSFET
Characteristics
Allowable Power Dissipation
PD=f(Tc)
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
45
40
35
30
25
20
15
10
5
260
240
220
200
180
160
140
120
100
80
20V
10V
8V
7.0V
6.5V
6.0V
60
40
VGS=5.5V
20
0
0
0
2
4
6
8
10 12 14 16 18 20
VDS [V]
0
25
50
75
100
125
150
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
100
10
1
0.1
0.1
0.1
0
1
2
3
4
5
6
7
8
9
10
1
10
100
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8.5A,VGS=10V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
VGS=
5.5V
6.0V
6.5V
7.0V
8V
10V
20V
max.
typ.
-50
-25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
35
40
45
Tch [°C]
ID [A]
2
2SK3527-01
FUJI POWER MOSFET
Typical Gate Charge Characteristics
VGS=f(Qg):ID=17A, Tch=25°C
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
24
22
20
18
16
14
12
10
8
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Vcc= 300V
max.
Vcc= 120V
Vcc= 480V
min.
6
4
2
0
-50
-25
0
25
50
75
100 125 150
0
20
40
60
Qg [nC]
80
100
120
Tch [°C]
Typical Forward Characteristics of Reverse Diode
Typical Capacitance
100 IF=f(VSD):80µs Pulse test,Tch=25°C
C=f(VDS):VGS=0V,f=1MHz
101
100
Ciss
10
10-1
10-2
10-3
Coss
Crss
1
0.1
10-1
100
101
102
103
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VDS [V]
VSD [V]
Maximum Avalanche Energy vs. starting Tch
Typical Switching Characteristics vs. ID
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=17A
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
103
102
101
100
500
450
400
350
300
250
200
150
100
50
td(off)
td(on)
tr
tf
0
10-1
100
101
102
0
25
50
75
100
125
150
starting Tch [°C]
ID [A]
3
2SK3527-01
FUJI POWER MOSFET
Transient Thermal Impedance
Zth(ch-c)=f(t):D=t/T,D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C. Vcc=60V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
tAV [sec]
10-4
10-3
10-2
4
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