2SK1663-L [FUJI]
N-channel MOS-FET; N沟道MOS - FET的
| 型号： | 2SK1663-L |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-channel MOS-FET |
| 文件： | 总2页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-channel MOS-FET
F-I Series
800V
4W
3A
80W
> Features
> Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
> Applications
- Switching Regulators
- UPS
- DC-DC Converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
800
Unit
V
Drain-Source-Voltage
V
DS
Continous Drain Current
Pulsed Drain Current
I
3
A
D
I
12
A
D(puls)
Continous Reverse Drain Current
Gate-Source-Voltage
I
3
±20
A
DR
V
V
GS
Max. Power Dissipation
Operating and Storage Temperature Range
P
80
W
°C
°C
D
T
150
ch
T
-55 ~ +150
stg
Electrical Characteristics (TC=25°C), unless otherwise specified
-
Item
Symbol
Test conditions
Min.
800
2,1
Typ.
3,0
Max.
Unit
V
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
V
ID=1mA
VGS=0V
(BR)DSS
V
ID=10mA
VDS=800V
VGS=0V
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
4,0
0,5
1,0
100
4
V
GS(th)
I
0,01
0,2
10
3
mA
mA
nA
W
DSS
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
I
VGS=±20V
ID=1,5A
GSS
R
VGS=10V
VDS=25V
DS(on)
g
ID=1,5A
2
4
S
fs
C
VDS=25V
900
90
35
20
40
150
60
1
1400
140
60
pF
pF
pF
ns
ns
ns
ns
V
iss
Output Capacitance
C
VGS=0V
f=1MHz
oss
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
C
rss
t
VCC=30V
ID=2,1A
30
d(on)
t
60
r
Turn-Off-Time toff (ton=td(off)+tf)
t
VGS=10V
RGS=50W
250
90
d(off)
t
f
Diode Forward On-Voltage
Reverse Recovery Time
V
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
1,35
SD
t
400
ns
rr
-dIF/dt=100A/µs Tch=25°C
-
Thermal Characteristics
Item
Symbol
Test conditions
channel to air
Min.
Typ.
Max.
125
Unit
Thermal Resistance
R
°C/W
th(ch-a)
R
channel to case
1,56 °C/W
th(ch-c)
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
N-channel MOS-FET
2SK1663-L,S
800V
4W
3A
80W
F-I Series
> Characteristics
Typical Output Characteristics
Drain-Source-On-State Resistance vs. Tch
Typical Transfer Characteristics
•
•
•
•
•
•
•
•
•
VDS [V] ®
Tch [°C] ®
VGS [V] ®
Typical Drain-Source-On-State-Resistance vs. ID
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
ID [A] ®
ID [A] ®
Tch [°C] ®
Typical Capacitance vs. VDS
Typical Input Charge
Forward Characteristics of Reverse Diode
•
VDS [V] ®
Qg [nC] ®
VSD [V] ®
Allowable Power Dissipation vs. TC
Safe operation area
•
Transient Thermal impedance
•
•
11
Tc [°C] ®
VDS [V] ®
t [s] ®
This specification is subject to change without notice!
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