2SK1666 [HITACHI]
Silicon N-Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK1666 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N-Channel MOS FET |
| 文件： | 总9页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1666
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
High speed switching
Low drive current
Low voltage drive device
Can be driven from 4 V
•
Suitable for motor drive, solenoid drive , DC-DC converter and etc.
Outline
TO-3PFM
D
G
1
2
3
1. Gate
2. Drain
3. Source
S
2SK1666
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
60
VGSS
±20
V
ID
45
A
1
Drain peak current
ID(pulse)
*
180
A
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
IDR
45
A
Pch*2
Tch
60
W
°C
°C
150
Tstg
–55 to +150
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
2
2SK1666
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS 60
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS ±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
1.0
—
—
—
—
±10
250
2.5
µA
µA
V
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
Zero gate voltage drain current IDSS
Gate to source cutoff voltage
VGS(off)
ID = 1 mA, VDS = 10 V
ID = 20 A, VGS = 10 V *1
Static drain to source on state RDS(on)
resistance
0.016 0.02
Ω
—
20
—
—
—
—
—
—
—
—
0.022 0.035
Ω
ID = 20 A, VGS = 4 V *1
ID = 20 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
|yfs|
Ciss
Coss
Crss
td(on)
tr
32
—
—
—
—
—
—
—
—
—
S
3950
1920
360
30
pF
pF
pF
ns
ns
ns
ns
V
ID = 20 A, VGS = 10 V,
180
630
290
1.3
RL = 1.5 Ω
Turn-off delay time
Fall time
td(off)
tf
Body to drain diode forward
voltage
VDF
IF = 45 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
140
—
ns
IF = 45 A, VGS = 0,
diF/dt = 50 A/µs
Note: 1. Pulse test
3
2SK1666
Maximum Safe Operation Area
Power vs. Temperature Derating
500
300
60
100
40
20
30
10
Ta = 25°C
3
Operation in this area
is limited by RDS
(on)
1
0.5
0.1 0.3
1
3
10
30
100
0
50
100
150
Drain to Source Voltage VDS (V)
Case Temperature TC (°C)
Typical Output Characteristics
Typical Transfer Characteristics
100
80
60
40
20
50
40
30
20
10
8 V
10 V
5 V
Pulse Test
VDS = 10 V
Pulse Test
4.5 V
4 V
75°C
25°C
3.5 V
TC = –25°C
VGS = 3 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
4
2SK1666
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
0.5
2.0
1.6
1.2
0.8
0.4
Pulse Test
Pulse Test
0.2
0.1
0.05
VGS = 4 V
VGS = 10 V
30 A
20 A
0.02
0.01
ID = 10 A
0.005
0
2
4
6
8
10
2
5
10
20
50 100 200
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
0.1
100
50
Ta = –25°C
Pulse Test
0.08
0.06
0.04
0.02
0
20
10
5
25°C
75°C
ID = 30 A
20 A
VGS = 4 V
10 A
30 A
Pulse Test
V
DS = 10 V
2
1
VGS = 10 V
10 A, 20 A
–40
0
40
80
120
160
0.5
1
2
5
10
20
50
Case Temperature TC (°C)
Drain Current ID (A)
5
2SK1666
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
500
1,000
100
10
di/dt = 50 A/µs
GS = 0, Ta = 25°C
Ciss
V
200
100
50
Coss
Crss
20
10
VGS = 0
f = 1 MHz
5
2
1
5
10
20
50 100 200
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Switching Characteristics
td (off)
Dynamic Input Characteristics
1,000
100
80
60
40
20
20
16
12
8
ID = 35 A
500
tf
tr
200
100
VDS
VDD = 10 V
25 V
50
td (on)
10 V
4
VDD = 50 V
25 V
10 V
.
=
20
10
VGS = 10 V, VDD . 30 V
PW = 2 µs, duty ≤ 1%
0
0.5
1
2
5
10
20
50
0
40
80
120
160
200
Drain Current ID (A)
Gate Charge Qg (nc)
6
2SK1666
Reverse Drain Current vs.
Source to Drain Voltage
100
80
Pulse Test
60
40
20
VGS = 10 V
0, –5 V
1.6
4 V
0
0.4
0.8
1.2
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D = 1
0.5
TC = 25°C
1.0
0.3
0.1
0.2
0.1
θch–c (t) = γS (t) · θch–c
θch–c = 2.08°C/W, TC = 25°C
0.05
PDM
0.02
PW
D =
0.03
0.01
T
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
7
Unit: mm
5.5 ± 0.3
15.6 ± 0.3
+ 0.4
– 0.2
φ3.2
4.0
2.6
3.2
1.4 Max
1.6
1.4 Max
1.0 ± 0.2
0.6 ± 0.2
5.45 ± 0.5
5.45 ± 0.5
Hitachi Code
JEDEC
EIAJ
TO-3PFM
—
—
Weight (reference value) 5.6 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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