2MBI225VX-120-50 [FUJI]
Insulated Gate Bipolar Transistor;
| 型号： | 2MBI225VX-120-50 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总7页 (文件大小：513K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2MBI225VX-120-50
IGBT Modules
Power Module (V series)
1200V / 225A / 2-in-1 package
■ Features
Low VCE(sat)
Low Inductance Module structure
Solderless press-fit terminals
■ Applications
Inverter for Motor Drives, AC and DC Servo Drives
Uninterruptible Power Supply Systems, Wind Turbines, PV Power Conditioning Systems
Outline drawing ( Unit : mm )
■
Weight: 350g (typ.)
■
Equivalent Circuit
[ Inverter ]
P
[ Thermistor ]
T1
C
T2
G1
E1
OUT
G2
E2
N
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2MBI225VX-120-50
IGBT Modules
■ Absolute Maximum Ratings (at TC= 25°C unless otherwise specified)
Maximum
Items
Symbols
Conditions
Units
Ratings
1200
±20
300
225
VCES
VGES
Collector-Emitter voltage
Gate-Emitter voltage
V
V
TC=25oC
IC
Continuous
TC=100oC
IC pulse
-IC
Collector current
1ms
450
225
A
-IC pulse
PC
1ms
1 device
450
1070
175
Collector power dissipation
Junction temperature
W
Tj
Operating junction temperature
(under switching conditions)
Case temperature
Tjop
150
oC
Tc
125
Tstg
Storage temperature
-40 ~ 125
between terminal and copper base (*1)
Isolation
voltage
Screw
Viso
AC: 1min.
2500
VAC
N m
between thermistor and others (*2)
Mounting (*3)
Terminals (*4)
-
-
3.5
4.5
Torque
(*1) All terminals should be connected together during the test.
(*2) Two thermistor terminals should be connected together, other terminals should be connected together and
shorted to base plate during the test.
(*3) Recommendable Value : 2.5-3.5 Nm (M5)
(*4) Recommendable Value : 3.5-4.5 Nm (M6)
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2MBI225VX-120-50
IGBT Modules
■ Electrical characteristics (at Tj= 25°C unless otherwise specified)
Characteristics
Items
Symbols
ICES
Conditions
VGE=0V, VCE
Units
min.
typ.
max.
Zero gate voltage
Collector current
=
1200V
-
-
3.0
mA
nA
V
Gate-Emitter
leakage current
IGES
VCE=0V, VGE=±20V
-
-
600
Gate-Emitter
threshold voltage
VGE(th)
VCE=20V, I =
225mA
6.0
-
6.5
7.0
C
Tj=25oC
2.20
2.65
VCE(sat)
Tj=125oC
Tj=150oC
Tj=25oC
Tj=125oC
Tj=150oC
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.55
2.60
1.85
2.20
2.25
3.33
18
-
(terminal)
VGE = 15V
-
Collector-Emitter
saturation voltage
V
I =
225A
C
2.30
VCE(sat)
(chip)
-
-
RG(int)
Cies
ton
tr
tr(i)
toff
Internal gate resistance
Input capacitance
-
Ω
-
-
nF
VCE=10V, VGE=0V, f=1MHz
550
180
120
1050
110
-
-
-
-
VCC
VGE
Ls=
=
=
IC=
RG=
Turn-on time
Turn-off time
600V
±15V
80nH
225A
1.6Ω
nsec
tf
-
Tj=25oC
2.05
2.20
2.15
1.70
1.85
2.50
VF
Tj=125oC
Tj=150oC
Tj=25oC
Tj=125oC
Tj=150oC
-
(terminal)
VGE = 0V
-
2.15
-
Forward on voltage
V
I =
225A
F
VF
(chip)
-
-
-
1.80
200
-
-
-
trr
R
B
Reverse recovery time
Thermistor Resistance
Thermistor B value
I =
nsec
Ω
225A
F
T=25oC
5000
495
T=100oC
T=25/50oC
465
3305
520
3450
3375
K
5. Thermal resistance characteristics
Characteristics
Items
Symbols
Rth(j-c)
Conditions
Units
min.
typ.
-
max.
IGBT
FWD
-
-
0.14
0.19
Thermal resistance
(1device)
-
oC/W
Contact thermal resistance
(1device) (*1)
Rth(c-f)
with thermal compound
-
0.0167
-
(*1) This is the value which is defined mounting on the additional cooling fin with thermal compound.
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IGBT Modules
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage (typ.)
Tj = 25oC / chip
Tj = 150oC / chip
500
500
400
300
200
100
0
VGE= 20V
15V
VGE=20V
15V
12V
400
300
200
100
0
12V
10V
8V
10V
8V
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
Collector-Emitter voltage: VCE [V]
Collector current vs. Collector-Emitter voltage
VGE = 15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj = 25oC / chip
500
10
Tj=25oC
o
125 C
o
150 C
400
300
200
100
0
8
6
4
IC=450A
IC=225A
IC=112A
2
0
0
1
2
3
4
5
5
10
15
20
25
Collector-Emitter Voltage: VCE [V]
Gate-Emitter Voltage: VGE [V]
Capacitance vs. Collector-Emitter Voltage
VGE= 0V, f= 1MHz, Tj= 25oC
Dynamic Gate Charge (typ.)
Vcc=600V, Ic=225A, Tj= 25°C
100
10
1
20
15
10
5
800
600
400
200
0
VCE
Cies
0
Cres
-5
-200
-400
-600
-800
Coes
-10
-15
-20
VGE
0.1
-2000
-1000
0
1000
2000
0
5
10
15
20
25
30
Collector-Emitter voltage: VCE [V]
Gate charge: QG [nC]
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IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1.6Ω, Tj=25°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1.6Ω, Tj=125°C, 150°C
10000
10000
Tj=125oC
Tj=150oC
toff
toff
1000
1000
100
10
ton
tr
ton
tr
tf
tf
100
10
0
100
200
300
400
500
0
100
200
300
400
500
Collector current: IC [A]
Collector current: IC [A]
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=225A, VGE=±15V, Tj=125°C, 150°C
Vcc=600V, VGE=±15V, Rg=1.6Ω, Tj=125°C, 150°C
10000
80
Tj=125oC
Tj=150oC
Tj=125oC
Tj=150oC
Eoff
60
toff
1000
100
10
ton
40
tr
tf
Err
20
Eon
0
0.1
1
10
100
0
100
200
300
400
500
Gate resistance: RG [Ω]
Collector current: IC [A]
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area (max.)
Vcc=600V, Ic=225A, VGE=±15V, Tj=125°C, 150°C
150
+VGE=15V, -VGE=15V, Rg=1.6Ω, Tj=150°C
600
Tj=125oC
Tj=150oC
500
400
Eon
100
50
0
300
Notice)
Switching characteristics of
VCE is defined between
Sense C and Sense E1 for
Upper arm and Sense E1
and Sense E2 for Lower arm.
200
Eoff
Err
100.0
100
0
0.1
1.0
10.0
0
500
1000
1500
Gate resistance: RG [Ω]
Collector-Emitter voltage: VCE [V]
FM5F8399
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2MBI225VX-120-50
IGBT Modules
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=1.6Ω, Tj=25°C
10000
Forward current vs. Forward vltage (typ.)
chip
500
400
Tj=25oC
1000
100
10
300
Irr
200
trr
125oC
100
150oC
0
0
1
2
3
0
100
200
300
400
500
Forward on voltage: VF [V]
Forward current: IF [A]
Reverse Recovery Characteristics (typ.)
Vcc=600V, Ic=225A, VGE=±15V, Tj=125°C, 150°C
Transient Thermal Resistance (max.)
10000
1
0.1
Tj=125oC
Tj=150oC
FWD
IGBT
1000
Irr
trr
100
0.01
0.001
τ
[sec] 0.00232 0.03007 0.05976 0.07082
IGBT 0.01502 0.03807 0.05379 0.03313
Rth
[°C/W] FWD 0.02038 0.05167 0.07299 0.04496
10
0
100
200
300
400
500
0.001
0.01
0.1
1
Forward current: If [A]
Pulse Width : Pw [sec]
[THERMISTOR]
Temperature characteristic (typ.)
FWD safe operating area (max.)
Tj=150°C
500
400
300
200
100
0
100
10
1
Pmax=225kW
Notice)
Switching characteristics of
VCE is defined between
Sense C and Sense E1 for
Upper arm and Sense E1
and Sense E2 for Lower arm.
0.1
0
500
1000
1500
-60 -40 -20
0
20 40 60 80 100 120 140 160
Temperature [oC]
Collector-Emitter voltage: VCE [V]
FM5F8399
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2MBI225VX-120-50
IGBT Modules
Warnings
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of 12/2014.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed
in this Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license,
either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric
Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or
implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the
use of the applications described herein.
3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products
may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate
safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become
faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
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･Machine tools ･Audiovisual equipment ･Electrical home appliances ･Personal equipment ･Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment
listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such
equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
･Transportation equipment (mounted on cars and ships) ･Trunk communications equipment
･Traffic-signal control equipment ･Gas leakage detectors with an auto-shut-off feature
･Emergency equipment for responding to disasters and anti-burglary devices ･Safety devices ･Medical equipment
Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to
strategic equipment (without limitation).
6.
･Space equipment ･Aeronautic equipment ･Nuclear control equipment ･Submarine repeater equipment
Copyright (c)1996-2014 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
7.
8.
If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the
product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
FM5F8399
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2014/12
相关型号：
2MBI300N-060-04A
Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MODULE-7
FUJI
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