1MBI75U4F-120L-50 [FUJI]
IGBT MODULE (U series) 1200V / 75A / 1 in one package; IGBT模块（ U系列） 1200V / 75A / 1在一个封装
| 型号： | 1MBI75U4F-120L-50 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IGBT MODULE (U series) 1200V / 75A / 1 in one package |
| 文件： | 总7页 (文件大小：454K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
http://www.fujielectric.com/products/semiconductor/
1MBI75U4F-120L-50
IGBT MODULE (U series)
IGBT Modules
1200V / 75A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter DB for Motor Drive
AC and DC Servo Drive Amplifier (DB)
Active PFC
Industrial machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Symbols
Conditions
Maximum ratings
Units
Collector-Emitter voltage
Gate-Emitter voltage
V
V
CES
1200
±20
V
V
GES
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
100
75
200
150
Ic
Continuous
1ms
Collector current
Icp
A
-Ic
35
-Ic pulse
Pc
VR
1ms
1 device
70
400
1200
100
200
+150
-40~+125
2500
Collector power dissipation
Reverse voltage for FWD
W
V
IF
Continuous
1ms
Forword current for FWD
A
IF pulse
Tj
Tstg
Junction temperature
Storage temperature
°C
°C
VAC
Isolation voltage Between terminal and copper base (*1) Viso
AC : 1min.
Mounting (*2)
Terminals (*3)
Screw torque
-
3.5
Nm
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : 2.5 to 3.5 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5 to 3.5 Nm (M5)
1
1MBI75U4F-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Characteristics
Units
Items
Symbols
Conditions
min.
-
-
typ.
-
max.
1.0
200
8.5
2.20
-
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
I
I
CES
GES
V
V
V
GE = 0V, VCE = 1200V
CE = 0V, VGE = ±20V
mA
nA
V
-
4.5
-
6.5
V
GE (th)
CE = 20V, I = 75mA
C
2.05
2.25
1.90
2.10
8
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE (sat)
(terminal)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VGE = 15V
Collector-Emitter saturation voltage
V
IC
= 75A
2.05
-
-
VCE (sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
Input capacitance
Turn-on time
V
GE = 0V, VCE = 10V, f = 1MHz
nF
0.32
0.10
0.03
0.41
0.07
1.65
1.75
1.60
1.70
-
1.75
1.90
1.60
1.75
-
1.20
0.60
-
1.00
0.30
2.00
-
1.85
-
1.0
1.90
-
V
CC = 600V, I
C
= 75A
= 9.1Ω
µs
VGE = ±15V, R
G
Turn-off time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
F
(terminal)
VGE = 0V
Forward on voltage
Reverse Current
V
mA
V
IF
= 35A
V
F
(chip)
IR
V
CE = 1200V
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
F
(terminal)
VGE = 0V
Forward on voltage
I
F
F
= 100A
-
-
-
-
1.75
-
0.35
-
V
F
(chip)
Reverse recovery time
trr
R lead
I
= 100A
µs
mΩ
1.39
Lead resistance, terminal-chip(*4)
Note *4: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Characteristics
Items
Symbols Conditions
Units
min.
typ.
max.
IGBT
Inverse Diode
FWD
-
-
-
-
-
-
-
0.31
0.88
0.40
-
Thermal resistance (1device)
Contact thermal resistance
Rth(j-c)
Rth(c-f)
°C/W
with Thermal Compound (*5)
0.05
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
1MBI75U4F-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125oC / chip
Tj=25oC / chip
200
150
100
50
200
150
100
50
VGE=20V 15V
VGE=20V
15V
12V
12V
10V
8V
10V
8V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25oC / chip
200
150
100
50
10
o
o
Tj=25 C Tj=125 C
8
6
4
2
0
Ic=150A
Ic=75A
Ic=37.5A
0
0
1
2
3
4
5
5
10
15
20
25
Collector-Emitter voltage : VCE [ V ]
Gate-Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25oC
Dynamic Gate charge (typ.)
Vcc=600V, Ic=75A, Tj=25oC
100.0
10.0
1.0
VGE
Cies
Cres
VCE
Coes
0.1
0
0
100
200
300
400
0
10
20
30
Collector-Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
3
1MBI75U4F-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=9.1Ω,Tj=25oC
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=9.1Ω,Tj=125oC
10000
1000
100
10000
1000
100
toff
ton
toff
ton
tr
tr
tf
tf
10
10
0
50
100
150
0
50
100
150
Collector current : Ic [ A ]
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=75A, VGE=±15V, Tj=25oC
Vcc=600V, VGE=±15V, RG=9.1Ω
10000
1000
100
14
12
10
8
Eon(125oC)
Eon(25oC)
Eoff(125oC)
ton
toff
tr
Err(125oC)
Eoff(25oC)
6
Err(25oC)
4
tf
2
10
0
1
10
100
1000
0
25
50
75
100
125
150
Gate resistance : RG [ Ω ]
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=75A, VGE=±15V, Tj=125oC
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 9.1Ω, Tj <= 125oC
40
30
20
10
0
200
150
100
50
Eon
Eoff
Err
0
1
10
100
1000
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]
Gate resistance : RG [ Ω ]
4
1MBI75U4F-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
FWD
FWD
Forward current vs. Forward on voltage (typ.)
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, RG=9.1Ω
chip
250
200
150
100
50
1000
100
10
Tj=25oC Tj=125oC
trr(125oC)
Irr(125oC)
trr(25oC)
Irr(25oC)
0
0
1
2
3
4
0
50
100
150
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
Inverse Diode
Forward current vs. Forward on voltage (typ.)
chip
Transient thermal resistance (max.)
80
60
40
20
0
10.00
1.00
0.10
0.01
Tj=25oC Tj=125oC
Inberse Diode
FWD
IGBT
0
1
2
3
4
0.001
0.010
0.100
1.000
Forward on voltage : VF [ V ]
Pulse width : Pw [ sec ]
5
1MBI75U4F-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
94
80
G2
E2
C2E1
E1
G1
E2
C1
23
23
2.7max.
3-M5
Equivalent Circuit Schematic
6
1MBI75U4F-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.
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requirements.
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• OA equipment
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• Personal equipment • Industrial robots etc.
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it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
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(without limitation).
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No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
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