1MBI900V-120-50 [FUJI]
IGBT MODULE (V series) 1200V / 900A / 1 in one package; IGBT模块（ V系列） 1200V / 900A / 1在一个封装
| 型号： | 1MBI900V-120-50 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IGBT MODULE (V series) 1200V / 900A / 1 in one package |
| 文件： | 总7页 (文件大小：453K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
1MBI900V-120-50
IGBT MODULE (V series)
1200V / 900A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Symbols
Conditions
Maximum ratings
Units
Collector-Emitter voltage
Gate-Emitter voltage
V
V
CES
1200
±20
V
V
GES
Tc=100°C
Tc=25°C
900
Ic
Continuous
1ms
1080
1800
900
Collector current
Ic pulse
-Ic
A
-Ic pulse
Pc
Tj
1ms
1 device
1800
4280
175
Collector power dissipation
Junction temperature
W
Operating junction temperature
(under switching conditions)
Tjop
150
°C
Case temperature
Storage temperature
Isolation voltage Between terminal and copper base (*1) Viso
Tc
Tstg
125
-40~+125
2500
6.0
AC : 1min.
VAC
Nm
Mounting (*2)
-
Screw torque
M4
M6
2.0
5.0
Terminals (*3)
Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 3.0-6.0 Nm (M5, M6)
Note *3: Recommendable Value : 1.1-2.0 Nm (M4)
Recommendable Value : 2.5-5.0 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
-
-
max.
-
2.0
1600
7.0
2.55
-
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
I
I
CES
GES
V
V
V
GE = 0V, VCE = 1200V
CE = 0V, VGE = ±20V
mA
nA
V
-
6.0
-
6.5
V
GE (th)
CE = 20V, I = 900mA
C
2.10
2.35
2.40
1.90
2.15
2.20
72.8
0.75
0.32
0.15
0.85
0.10
2.00
2.15
2.10
1.70
1.85
1.80
0.3
Tj=25°C
V
CE (sat)
-
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
(terminal)
VGE = 15V
Collector-Emitter saturation voltage
V
IC
= 900A
-
-
2.15
-
VCE (sat)
(chip)
-
-
-
-
-
-
-
-
-
-
-
-
Input capacitance
Turn-on time
Cies
ton
tr
tr(i)
toff
tf
V
GE = 0V, VCE = 10V, f = 1MHz
nF
µs
V
CC = 600V, I
C
= 900A
= 1.5/-0.9Ω
VGE = ±15V, R
G
Tj=150°C, Ls=30nH
-
Turn-off time
-
2.45
-
Tj=25°C
V
F
(terminal)
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
VGE = 0V
Forward on voltage
V
IF
= 900A
-
-
2.15
-
V
F
(chip)
-
-
Reverse recovery time
trr
I
F
= 900A
1
µs
1MBI900V-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Thermal resistance characteristics
Items
Characteristics
Units
Symbols Conditions
min.
typ.
max.
0.035
0.060
-
IGBT
Rth(j-c)
-
-
-
-
Thermal resistance (1device)
Contact thermal resistance (*4)
FWD
-
°C/W
Rth(c-f)
with Thermal Compound
0.0063
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
1MBI900V-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
2000
2000
VGE=20V 15V
VGE= 20V
15V
1800
1800
1600
1400
1200
1000
800
600
400
200
0
12V
1600
1400
1200
1000
12V
10V
10V
8V
800
600
400
8V
200
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
Collector-Emitter voltage: VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C / chip
2000
10
Tj=25°C125°C
1800
150°C
8
1600
1400
1200
1000
800
600
400
200
0
6
4
Ic=1200A
Ic=600A
Ic=300A
2
0
5
10
15
20
25
0
1
2
3
4
5
Collector-Emitter Voltage: VCE [V]
Gate-Emitter Voltage: VGE [V]
Gate Capacitance vs. Collector-Emitter Voltage
VGE= 0V, ƒ= 1MHz, Tj= 25°C
Dynamic Gate Charge (typ.)
Vcc=600V, Ic=900A, Tj= 25°C
1000
Cies
100
VCE
VGE
10
Cres
Coes
1
0
10
20
30
0
2000
4000
6000
Collector-Emitter voltage: VCE [V]
Gate charge: Qg [nC]
3
1MBI900V-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=+1.5/-0.9Ω, Tj=125°C
Vcc=600V, VGE=±15V, RG=+1.5/-0.9Ω, Tj=150°C
10000
10000
1000
100
10
toff
ton
tr
1000
toff
ton
tr
tf
100
tf
10
0
300 600 900 1200 1500 1800 2100
0
300 600 900 1200 1500 1800 2100
Collector current: Ic [A]
Collector current: Ic [A]
Switching loss vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Vcc=600V, VGE=±15V, RG=+1.5/-0.9Ω, Tj=125°C, 150°C
Vcc=600V, Ic=900A, VGE=±15V, Tj=125°C
10000
200
Tj=125oC
Tj=150oC
180
Eoff
toff
ton
160
140
120
100
80
tr
1000
100
10
Eon
Err
60
tf
40
20
0
0
300 600 900 1200 1500 1800 2100
0.1
1
10
100
Gate resistance: RG [Ω]
Collector current: Ic [A]
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area (max.)
Vcc=600V, Ic=900A, VGE=±15V, Tj=125°C, 150°C
VGE=+15/-15V, RG=+1.5/-0.9Ω, Tj=150°C, Ls=35nH
300
2000
1800
1600
1400
1200
1000
800
Tj=125oC
Eon
Tj=150oC
250
200
150
Eoff
100
600
400
50
200
Err
0
0
0
1
10
100
0
400
800
1200
1600
Gate resistance: RG [Ω]
Collector-Emitter voltage: VCE [V]
4
1MBI900V-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Forward Current vs. Forward Voltage (typ.)
chip
Reverse Recovery Characteristics (typ.)
Vcc=600V, VGE=±15V, RG=+1.5/-0.9Ω, Tj=125°C
2000
1800
1600
1400
1200
1000
800
10000
Tj=25°C
1000
Irr
trr
100
600
125°C
400
150°C
200
0
10
0
1
2
3
0
400
800
1200 1600 2000
Forward on voltage: VF [V]
Forward current: IF [A]
Reverse Recovery Characteristics (typ.)
Vcc=600V, VGE=±15V, RG=+1.5/-0.9Ω, Tj=125°C
Transient Thermal Resistance (max.)
10000
1
0.1
1000
FWD
IGBT
Irr
trr
100
0.01
0.001
10
0
400
800
1200 1600 2000
0.001
0.01
0.1
1
Forward current: IF [A]
Pulse Width : Pw [sec]
FWD safe operating area (max.)
Tj=150°C
2000
1800
1600
1400
1200
1000
800
Pmax=800kW
600
400
200
0
0
500
1000
1500
Collector-Emitter voltage: VCE [V]
5
1MBI900V-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
4-Ø6.5
24
20
29
C
G
E
E
C
93
108
2-M6
2-M4
Equivalent Circuit Schematic
6
1MBI900V-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.
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requirements.
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• Personal equipment • Industrial robots etc.
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it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
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(without limitation).
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No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
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