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FLC161WF [FUJITSU]

Transistor;
FLC161WF
型号： FLC161WF
厂家： FUJITSU    FUJITSU
描述：

Transistor
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中文：  中文翻译
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FLC161WF  
C-Band Power GaAs FETs  
FEATURES  
• High Output Power: P  
= 31.8dBm(Typ.)  
1dB  
= 7.5dB(Typ.)  
• High Gain: G  
1dB  
= 35%(Typ.)  
• High PAE: h  
add  
• Proven Reliability  
• Hermetic Metal/Ceramic Package  
DESCRIPTION  
The FLC161WF is a power GaAs FET that is designed for general  
purpose applications in the C-Band frequency range as it provides  
superior power, gain, and efficiency.  
Fujitsu’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25¡C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
15  
-5  
V
V
DS  
GS  
T = 25¡C  
c
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
P
7.5  
-65 to +175  
175  
W
¡C  
¡C  
T
T
stg  
T
ch  
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 10 volts.  
DS  
2. The forward and reverse gate currents should not exceed +2.0 and -1.0 mA respectively with  
gate resistance of 200W.  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25¡C)  
Limit  
Typ.  
Item  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
V
V
V
I
= 5V, V  
= 5V, I  
= 0V  
GS  
Saturated Drain Current  
Transconductance  
I
-
-
600  
900  
-
mA  
DS  
DS  
DS  
DSS  
g
m
= 400mA  
=30mA  
DS  
300  
mS  
V
DS  
Pinch-off Voltage  
V
= 5V, I  
-1.0  
-5  
-2.0 -3.5  
p
Gate Source Breakdown Voltage  
V
-
-
= -30µA  
V
GSO  
GS  
Output Power at 1dB G.C.P.  
P
1dB  
30.5 31.8  
-
dBm  
V
= 10V,  
DS  
I
= 0.6 I  
DS  
f = 6 GHz  
DSS (Typ.),  
-
Power Gain at 1dB G.C.P.  
Power-added Efficiency  
G
6.5  
7.5  
dB  
1dB  
h
add  
-
%
-
-
35  
15  
R
20  
Thermal Resistance  
Channel to Case  
¡C/W  
th  
G.C.P.: Gain Compression Point  
CASE STYLE: WF  
Data Sheets  
1998 Microwave Databook  
236  
FLC161WF  
C-Band Power GaAs FETs  
DRAIN CURRENT  
POWER DERATING CURVE  
vs. DRAIN-SOURCE VOLTAGE  
10  
2.  
8
V
=0V  
600  
400  
GS  
6
4
-0.5V  
-1.0V  
-1.5V  
-2.0V  
200  
2
0
2
4
6
8
10  
0
50 100 150 200  
Case Temperature (¡C)  
Drain-Source Voltage (V)  
OUTPUT POWER  
& IM vs. INPUT POWER  
3
V
=10V  
DS  
f = 6.0 GHz  
27  
25  
1
f = 6.01GHz  
2
-10  
2-tone Test  
23  
21  
19  
17  
-20  
-30  
-40  
-50  
P
out  
IM  
3
10 12 14 16 18  
Input Power (S.C.L.) (dBm)  
S.C.L.: Single Carrier Level  
Data Sheets  
1998 Microwave Databook  
237  
FLC161WF  
C-Band Power GaAs FETs  
+j50  
+90˚  
S
S
S
S
11  
22  
21  
12  
+j100  
12  
+j25  
11  
10  
9
8
7
12  
6
2 GHz  
11  
10  
5
+j250  
+j10  
9
4
3
3
8
7
6
4
5
10  
25  
3
50W  
2 GHz  
100  
250  
4
3
2
1
4
0
180˚  
5
0°  
9
SCALE FOR |S  
|
6
10  
11  
12  
21  
2 GHz  
0 . 0 2  
0 . 0 4  
0 . 0 6  
-j10  
-j250  
0 . 0 8  
0 . 1  
-j25  
-j100  
-j50  
0˚  
S-PARAMETERS  
V
= 10V, I  
= 360mA  
DS  
S21  
DS  
FREQUENCY  
(MHZ)  
S11  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
500  
1000  
2000  
3000  
4000  
5000  
6000  
7000  
8000  
9000  
10000  
11000  
12000  
.852  
.959  
.859  
.861  
.863  
.873  
.887  
.894  
.900  
.895  
.891  
.898  
.909  
-94.3  
9.235  
5.805  
3.086  
2.045  
1.489  
1.154  
.936  
.783  
.676  
.586  
.521  
125.6  
96.6  
65.5  
43.9  
24.3  
7.2  
.033  
.042  
.043  
.041  
.039  
.038  
.039  
.041  
.046  
.052  
.059  
.067  
.079  
37.0  
17.2  
1.7  
.222  
.285  
.343  
.399  
.459  
.518  
.575  
.626  
.671  
.700  
.716  
.736  
.761  
-116.9  
-143.0  
-159.2  
-167.3  
-176.2  
174.9  
166.1  
158.0  
149.4  
139.8  
129.8  
120.0  
109.8  
-138.0  
-173.6  
167.9  
153.5  
141.8  
131.5  
122.4  
113.5  
104.1  
94.6  
-5.1  
-7.7  
-6.7  
-4.8  
-3.6  
-2.4  
-6.3  
-11.1  
-17.0  
-24.3  
-8.7  
-23.0  
-37.3  
-51.3  
-64.5  
-76.5  
-89.5  
85.4  
75.6  
.476  
.449  
P
& h vs. V  
add DS  
OUTPUT POWER vs. INPUT POWER  
1dB  
V
I
=10V  
» 0.6 I  
DS  
DS  
f=6GHz  
DS  
32  
30  
28  
26  
24  
DSS  
I
» 0.6 I  
DSS  
6 GHz  
4 GHz  
50  
40  
30  
32  
31  
30  
P
out  
P
1dB  
50  
40  
30  
20  
10  
4 GHz  
6 GHz  
h
add  
22  
20  
h
add  
8
9
10  
14 16 18 20 22 24  
Input Power (dBm)  
Drain-Source Voltage (V)  
Data Sheets  
1998 Microwave Databook  
238  
FLC161WF  
C-Band Power GaAs FETs  
Case Style "WF"  
Metal-Ceramic Hermetic Package  
2.  
2.5  
(0.098)  
2-ø1.6±0.01  
(0.063)  
1
2
0.1±0.05  
(0.004)  
3
0.6  
(0.024)  
8.5±0.2  
(0.335)  
6.1±0.1  
(0.240)  
1: Gate  
2: Source (Flange)  
3: Drain  
Unit: mm (inches)  
Data Sheets  
1998 Microwave Databook  
239  

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