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FLC257MH-8 [FUJITSU]

C-Band Power GaAs FET; C波段功率GaAs FET
FLC257MH-8
型号： FLC257MH-8
厂家： FUJITSU    FUJITSU
描述：

C-Band Power GaAs FET
C波段功率GaAs FET

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FLC257MH-8  
C-Band Power GaAs FET  
FEATURES  
• High Output Power: P  
= 34.0dBm(Typ.)  
1dB  
• High Gain: G  
= 8.0dB(Typ.)  
= 35%(Typ.)  
1dB  
• High PAE: η  
add  
• ProvenReliability  
• Hermetic Metal/Ceramic Package  
DESCRIPTION  
The FLC257MH-8 is a power GaAs FET that is designed for general  
purpose applications in the C-Band frequency range as it provides  
superior power, gain, and efficiency.  
Fujitsu’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
15  
-5  
V
V
DS  
GS  
T = 25°C  
c
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
P
15  
-65 to +175  
175  
W
°C  
°C  
T
T
stg  
T
ch  
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 10 volts.  
DS  
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with  
gate resistance of 200Ω.  
3. The operating channel temperature (T ) should not exceed 145°C.  
ch  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limit  
Typ.  
Item  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
V
V
V
I
= 5V, V  
= 0V  
GS  
Saturated Drain Current  
Transconductance  
I
-
-
1000 1500  
mA  
DS  
DS  
DS  
DSS  
g
m
-
= 5V, I  
=600mA  
=50mA  
500  
mS  
V
DS  
Pinch-off Voltage  
V
p
= 5V, I  
DS  
-1.0  
-5  
-2.0 -3.5  
Gate Source Breakdown Voltage  
V
-
-
= -50µA  
V
GSO  
GS  
Output Power at 1dB G.C.P.  
P
1dB  
32.5 34.0  
-
dBm  
V
= 10V,  
DS  
I
= 0.6 I  
DS  
DSS (Typ.),  
-
Power Gain at 1dB G.C.P.  
Power-added Efficiency  
G
7.0  
8.0  
dB  
1dB  
f = 8.5 GHz  
η
add  
-
%
-
-
35  
8
R
Thermal Resistance  
Channel to Case  
10  
°C/W  
th  
G.C.P.: Gain Compression Point  
CASE STYLE: MH  
Edition 1.1  
July 1999  
1
FLC257MH-8  
C-Band Power GaAs FET  
DRAIN CURRENT  
vs. DRAIN-SOURCE VOLTAGE  
POWER DERATING CURVE  
1000  
750  
V
=0V  
16  
GS  
-0.5V  
-1.0V  
12  
8
500  
250  
-1.5V  
-2.0V  
4
0
2
4
6
8
10  
0
50 100 150 200  
Drain-Source Voltage (V)  
Case Temperature (°C)  
OUTPUT POWER  
& IM vs. INPUT POWER  
3
V
1
=10V  
DS  
f = 8.5 GHz  
29  
27  
f = 8.51GHz  
2
-10  
2-tone Test  
25  
23  
21  
19  
-20  
-30  
-40  
-50  
P
out  
IM  
3
12 14 16 18 20  
Input Power (S.C.L.) (dBm)  
S.C.L.: Single Carrier Level  
P
1dB  
& η  
add  
vs. V  
OUTPUT POWER vs. INPUT POWER  
DS  
V
I
= +10V  
DS  
≈ 0.6 I  
f=8.5 GHz  
DS  
35  
DS  
DSS  
I
≈ 0.6 I  
DSS  
f = 8.5 GHz  
50  
40  
30  
35  
34  
33  
33  
31  
29  
27  
P
out  
50  
40  
30  
20  
10  
P
1dB  
η
add  
η
add  
25  
23  
17 19 21 23 25 27  
Input Power (dBm)  
8
9
10  
Drain-Source Voltage (V)  
2
FLC257MH-8  
C-Band Power GaAs FET  
S
S
S
S
+90°  
11  
22  
21  
12  
+j50  
7
+j100  
+j25  
6.5  
6GHz  
7.5  
8
9
8.5  
+j250  
7.5  
+j10  
0
7
7
8
8
7.5  
7
8
6GHz  
6GHz  
9
8.5  
8.5  
6.5  
9
25  
100  
250  
50Ω  
180°  
4
3
2
1
0°  
8.5  
6GHz  
SCALE FOR |S  
|
9
21  
.02  
-j10  
-j250  
.04  
.06  
.08  
-j25  
-j100  
-j50  
-90°  
S-PARAMETERS  
V
= 10V, I  
= 600mA  
DS  
S21  
DS  
FREQUENCY  
(MHZ)  
S11  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
500  
6000  
6500  
7000  
7500  
8000  
8500  
9000  
9500  
10000  
.928  
.826  
.770  
.666  
.485  
.170  
.243  
.561  
.740  
.828  
-142.8  
127.2  
114.2  
98.0  
7.163  
1.097  
1.179  
1.270  
1.453  
1.500  
1.368  
1.053  
.758  
109.2  
90.1  
92.6  
84.3  
73.2  
53.1  
29.9  
10.3  
-1.9  
.021  
.025  
.026  
.030  
.035  
.041  
.042  
.038  
.029  
.023  
28.8  
99.3  
98.5  
81.0  
67.7  
43.3  
14.0  
-12.0  
-29.6  
-40.1  
.344  
.778  
.798  
.834  
.863  
.894  
.889  
.874  
.848  
.846  
-157.2  
-174.5  
-179.6  
175.7  
169.2  
162.7  
156.1  
150.6  
146.0  
143.4  
78.9  
55.0  
-164.9  
170.0  
150.0  
134.3  
.569  
-9.3  
Download S-Parameters, click here  
3
FLC257MH-8  
C-Band Power GaAs FET  
Case Style "MH"  
Metal-Ceramic Hermetic Package  
0.5  
(0.020)  
0.1  
(0.004)  
2-ø1.8±0.15  
(0.071)  
1
2
3
1.65±0.15  
(0.065)  
2.8 Max  
(0.110)  
3.5±0.3  
(0.138)  
6.7±0.2  
(0.264)  
10.0±0.3  
(0.394)  
1: Gate  
2: Source (Flange)  
3: Drain  
Unit: mm (Inches)  
For further information please contact:  
FUJITSU COMPOUND SEMICONDUCTOR, INC.  
2355 Zanker Rd.  
CAUTION  
San Jose, CA 95131-1138, U.S.A.  
Phone: (408) 232-9500  
Fujitsu Compound Semiconductor Products contain gallium arsenide  
(GaAs) which can be hazardous to the human body and the environment.  
For safety, observe the following procedures:  
FAX: (408) 428-9111  
www.fcsi.fujitsu.com  
• Do not put these products into the mouth.  
• Do not alter the form of this product into a gas, powder, or liquid  
through burning, crushing, or chemical processing as these by-products  
are dangerous to the human body if inhaled, ingested, or swallowed.  
FUJITSU MICROELECTRONICS, LTD.  
Compound Semiconductor Division  
Network House  
• Observe government laws and company regulations when discarding this  
product. This product must be discarded in accordance with methods  
specified by applicable hazardous waste procedures.  
Norreys Drive  
Maidenhead, Berkshire SL6 4FJ  
Phone:+44 (0)1628 504800  
FAX:+44 (0)1628 504888  
Fujitsu Limited reserves the right to change products and specifications without notice.  
The information does not convey any license under rights of Fujitsu Limited or others.  
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.  
Printed in U.S.A. FCSI0598M200  
4

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