FTK4N60F [FS]
4 Amps, 600 Volt N-CHANNEL POWER MOSFET;
| 型号： | FTK4N60F |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | 4 Amps, 600 Volt N-CHANNEL POWER MOSFET |
| 文件： | 总7页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTK4N60P / F / D / I
TECHNICAL DATA
Power MOSFET
4 Amps, 600 Volt
I :
N-CHANNEL POWER MOSFET
1
TO - 251
D :
DESCRIPTION
1
TO - 252
The FTK 4N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
P :
1
TO - 220
F :
FEATURES
1
TO - 220F
* RDS(ON) = 2.5Ω@VGS = 10V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer Capacitance ( CRSS = typical 7.5 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Ordering Number
FTK4N60P
Package
Packing
1
G
2
D
3
S
TO-220
TO-220F
TO-251
TO-252
Tube
Tube
Tube
G
G
G
D
D
D
S
S
S
FTK4N60F
FTK4N60I
FTK4N60D
Tape Reel
Note: Pin Assignment:
G: Gate
D: Drain S: Source
2008. 07. 10
Revision No : 1
1/7
FTK4N60P / F / D / I
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(
TC = 25˚C, unless otherwise specified)
PARAMET
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
600
±30
VGSS
Gate-Source Voltage
V
IAR
Avalanche Current (Note 1)
A
4.4
TC = 25°C
4.0
A
Continuous Drain Current
Pulsed Drain Current (Note 1)
Avalanche Energy
ID
TC = 100°C
2.2
IDM
EAS
A
mJ
16
Single Pulse(Note 2)
150
EAR
dv/dt
PD
Repetitive Limited by TJ(MAX)
mJ
7.0
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
V/ns
4.5
106
W
˚C
TJ
Junction Temperature
+150
-55 ~ +150
-55 ~ +150
TOPR
TSTG
˚C
˚C
Operating Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(TC = 25˚C , unless Otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
600
1
µA
µA
Drain-Source Leakage Current
Gate-Source Leakage Current
10
V
GS = 30V, VDS = 0V
Forward
Reverse
100
nA
nA
IGSS
VGS = -30V, VDS = 0V
-100
ID = 250µA, Referenced to
25°C
ΔBVDSS / ΔTJ
Breakdown Voltage Temperature Coefficient
0.7
1.9
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.2A
2.0
4.0
2.5
V
Ω
S
Drain-Source On-State Resistance
VDS = 50V, ID = 2.2A (Note 4)
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
520
35
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
7.5
tD(ON)
10
ns
tR
tD(OFF)
tF
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
VDD = 300V, ID = 4A, RG = 25Ω
(Note 4,5)
42
38
ns
ns
46
ns
QG
15
nC
nC
VDS = 480V,ID = 4A, VGS = 10V
(Note 4,5)
QGS
2.8
QGD
Gate-Drain Charge
5.5
nC
2008. 07. 10
Revision No : 1
2/7
FTK4N60P / F / D / I
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
VSD
IS
VGS = 0 V, IS = 4.0 A
Drain-Source Diode Forward Voltage
1.4
4.0
V
A
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode Forward
Current
ISM
16
A
tRR
VGS = 0 V, IS = 4.0A,
d F/dt =100 A/µs (Note 4)
Reverse Recovery Time
310
ns
QRR
l
Reverse Recovery Charge
2.26
µC
Note:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 17mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 4A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2008. 07. 10
Revision No : 1
3/7
FTK4N60P / F / D / I
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by R
G
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Period
P. W.
VGS
(Driver)
D=
P.W.
Period
10V
=
VGS
I
FM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
2008. 07. 10
Revision No : 1
4/7
FTK4N60P / F / D / I
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤ 0 1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0 3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
2008. 07. 10
Revision No : 1
5/7
FTK4N60P / F / D / I
Power MOSFET
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs.
Temperature
On-Resistance Junction Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
V
I
=10V
GS
= 2.0A
DS
1.1
1.0
Note:
1. VGS=0V
2. ID=250μA
0.9
0.8
-50
-100
0
50 100 150 200
-100
-50
0
50
100
150
Junction Temperature, TJ (˚C
)
Junction Temperature, TJ (˚C)
Maximum Drain Current vs. Case
Maximum Safe Operating Area
Temperature
5
4
Operation in This Area is Limited by
RDS(on)
100μs
10
1ms
10ms
3
2
DC
1
Notes:
1 TJ = 25˚C
2 TJ =150˚C
3 Single Pulse
1
0
0.1
1
10
100
1000
25 50
75 100
125
Case Temperature, TJ (˚C)
Drain-Source Voltage, VDS (V)
On-State Characteristics
Transfer Characteristics
VGS
Top : 10V
10
10
9V
8V
7V
6V
25˚C
5 5V
1
5V
5.0V
Bottorm :5 0V
150˚C
1
Notes:
1. 250μs Pulse Test
2. TC=25˚C
0.1
Notes:
1. VDS =50V
2.
250
μ
s
Pulse Test
0.1
2
4
6
8
10
0.1
1
10
Gate-Source Voltage, VDS (V)
Drain-to-Source Voltage, VDS (V)
2008. 07. 10
Revision No : 1
6/7
FTK4N60P / F / D / I
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
On State Current vs. Allowable Case
On-Resistance Variation vs. Drain
Current and Gate Voltage
Temperature
10
6 0
5 0
4 0
3 0
2 0
1 0
0
150˚C
25˚C
V
=7V
GS
1
V
=10V
GS
Notes:
1. VGS = 0V
2. 250μs Test
0.1
0.2 0.4 0.6
0
1
2
3
4
5
6
7
8
0.8 1.0 1.2 1.41.6 1.8
Drain Current, ID (A)
Source-Drain Voltage, VSD (V)
Capacitance Characteristics
(Non-Repetitive)
Gate Charge Characteristics
12
10
8
1200
Ciss Cgs +Cgd (Cds=shorted )
Coss=Cds+Cgd Crss=Cgd
VDS=300V
VDS=480V
1000
800
Ciss
Notes:
1. VGS=0V
2. f = 1MHz
VDS=120V
Coss
6
600
400
200
4
2
Crss
Note: ID = 4A
0
0
20
Total Gate Charge, QG nC)
0
5
10
15
25
0.1
1
10
(
Drain-SourceVoltage, VDS (V)
Transient Thermal Response
Curve
1
0.1
Notes:
1
θJC (t) = 1 18˚C/W Max
2 Duty Factor , D =t1/t2
3 TJM-TC=PDM×θJC(t)
0.01
1E-5
1E-4 1E-3 0.01 0.1
1
10
Square Wave Pulse Duration, t1 (sec)
2008. 07. 10
Revision No : 1
7/7
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