FTK4N65P [FS]
4 Amps, 650 Volt N-CHANNEL POWER MOSFET;型号: | FTK4N65P |
厂家: | First Silicon Co., Ltd |
描述: | 4 Amps, 650 Volt N-CHANNEL POWER MOSFET |
文件: | 总7页 (文件大小:387K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTK4N65P/F/I/D
TECHNICAL DATA
4 Amps, 650 Volt
Power MOSFET
N-CHANNEL POWER MOSFET
I :
1
TO - 251
D :
DESCRIPTION
1
TO - 252
The FTK4N65 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
P :
1
TO - 220
F :
FEATURES
1
TO - 220F
* RDS(ON) = 2.7Ω@VGS = 10V
* Ultra low gate charge ( typical 12 nC )
* Low reverse transfer Capacitance ( CRSS = typical 6.5 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Ordering Number
FTK4N65P
Package
Packing
1
G
2
D
3
TO-220
TO-220F
TO-251
TO-252
S
Tube
Tube
Tube
G
G
G
D
D
D
S
S
S
FTK4N65F
FTK4N65I
FTK4N65D
Tape Reel
Note: Pin Assignment:
G: Gate
D: Drain
S: Source
2012. 07. 03
Revision No : 0
1/7
FTK4N65P/F/D/I
(TC= 25˚C, unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS
PARAMET
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
650
VGSS
V
±30
IAR
Avalanche Current (Note 1)
A
4.4
TC = 25°C
3.6
A
Continuous Drain Current
Pulsed Drain Current (Note 1)
Avalanche Energy
ID
TC = 100°C
2.3
16
IDM
EAS
EAR
dv/dt
PD
A
Single Pulse(Note 2)
mJ
mJ
150
Repetitive Limited by TJ(MAX)
7.0
Peak Diode Recovery dv/dt (Note 3)
V/ns
W
4.5
Tc=25℃
45/45/31/62.5
0.36/0.36/0.25/0.5
+150
Total Power Dissipation
(TO-251/252/TO-220F/220)
W
Derate above 25°C
˚C
TJ
Junction Temperature
Operating Temperature
Storage Temperature
TOPR
TSTG
˚C
˚C
-55 ~ +150
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
(TC = 25˚C , unless Otherwise specified.)
ELECTRICAL CHARACTERISTICS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
650
V
1
µA
µA
Drain-Source Leakage Current
Gate-Source Leakage Current
10
V
GS = 30V, VDS = 0V
Forward
Reverse
100
nA
nA
IGSS
VGS = -30V, VDS = 0V
-100
ID = 250µA, Referenced to
25°C
ΔBVDSS / ΔTJ
Breakdown Voltage Temperature Coefficient
0.7
1.9
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.0A
2.0
4.0
2.7
V
Ω
S
Drain-Source On-State Resistance
VDS = 50V, ID = 2.0A (Note 4)
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
510
60
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
6.5
tD(ON)
20
ns
tR
tD(OFF)
tF
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
VDD = 325V, ID=3.6A, R = 25Ω
(Note 4,5)
15
45
15
12
2.5
ns
ns
G
ns
QG
nC
nC
VDS = 520V,ID = 3.6A, V =10V
GS
QGS
(Note 4,5)
QGD
Gate-Drain Charge
5.0
nC
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Revision No : 0
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FTK4N65P/F/D/I
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
VSD
IS
VGS = 0 V, IS = 4.0 A
Drain-Source Diode Forward Voltage
1.4
3.6
V
A
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode Forward
Current
ISM
A
14.4
tRR
VGS = 0 V, IS = 4.0A,
d F/dt =100 A/µs (Note 4)
Reverse Recovery Time
350
2.1
ns
QRR
l
Reverse Recovery Charge
µC
Note:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 15mH, IAS=3.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 7A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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Revision No : 0
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FTK4N65P/F/D/I
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by R
G
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Period
P. W.
VGS
(Driver)
D=
P.W.
Period
10V
=
VGS
I
FM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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FTK4N65P/F/D/I
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤ 0 1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0 3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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FTK4N65P/F/D/I
TYPICAL CHARACTERISTICS
Fig1. I - V
Fig2. I - V
D
D
GS
DS
100
10
V
DS
=25V
101
V
=10V, 7V
GS
100 C
25 C
100
1
V
=5V
GS
10-1
0.1
0.1
10
Drain - Source Voltage VDS (V)
2
4
6
8
10
1
100
Gate - Source Voltage VGS (V)
Fig3. BV
- T
Fig4. R
- I
DS(ON) D
DSS
j
1.2
1.1
1.0
0.9
0.8
6.0
5.0
4.0
3.0
2.0
1.0
0
VGS = 0V
IDS = 250
V
=7V
GS
V
=10V
GS
100
-100
-50
0
50
150
0
1
2
3
4
5
6
7
8
Junction Temperature Tj (
)
Drain Current ID (A)
C
Fig6. R
- T
j
DS(ON)
Fig5. I - V
S
SD
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
I
=10V
= 1.8A
GS
DS
101
100
10-1
150 C
25 C
-100
-50
0
50
100
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
(V)
Junction Temperature T (
)
C
Source - Drain Voltage VSD
j
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FTK4N65P/F/D/I
TYPICAL CHARACTERISTICS(Cont.)
Fig 7. C - V
DS
Fig8. Q - V
g
GS
104
103
102
101
100
12
10
8
ID=3 6A
V
= 520V
DS
C
C
iss
6
oss
4
C
rss
2
0
0
2
4
6
8
10
12
(nC)
14
16
0
10
20
30
40
Gate - Charge
Q
g
Drain - Source Voltage VDS (V)
Fig10. Safe Operation Area
Fig9. Safe Operation Area
(FTK4N65P)
(FTK4N65F)
101
100
10-1
10-2
101
100
10-1
10-2
10µs
10µs
100µs
100µs
1ms
1ms
10ms
DC
10ms
Operation in this
area is limited by RDS(ON)
Operation in this
area is limited by RDS(ON)
DC
T = 25
T = 25
C
c
C
c
C
C
T = 150
j
T = 150
j
Single nonrepetitive pulse
Single nonrepetitive pulse
102
103
102
103
100
101
100
101
Drain - Source Voltage V
(V)
Drain - Source Voltage V (V)
DS
DS
Fig11. I - T
D
j
4
3
2
1
0
0
25
50
75
100
125
150
Junction Temperature T
(
)
C
j
2012. 07. 03
Revision No : 0
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