FTK20NS65P [FS]
20Amps, 650Volts N-Channel Super Juction MOS-FET;型号: | FTK20NS65P |
厂家: | First Silicon Co., Ltd |
描述: | 20Amps, 650Volts N-Channel Super Juction MOS-FET |
文件: | 总7页 (文件大小:889K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTK20NS65P/F/DD
TECHNICAL DATA
20Amps, 650Volts N-Channel Super Juction MOS-FET
Product Summary
VDS @ Tj,max
RDS(on),max
IDM
650V
0.15Ω
60A
P :
1
Qg,typ
39nC
TO-220
DESCRIPTION
F :
FTK20NS65 Power MOS FET is fabricated using
advanced super junction technology. The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
1
TO-220F
DD :
1
FEATURES
TO-263
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Ultra fast body diode
Ultra low RDS(on)
Ultra low gate charge (typ. Qg = 39nC)
100% UIS tested
RoHS compliant
Applications
SYMBOL
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Power faction correction (PFC).
2.Drain
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Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Order Number
Package
Packing
1
2
3
FTK20NS65P
FTK20NS65F
FTK20NS65DD
TO-220
TO-220F
TO-263
G
D
S
Tube
Tube
G
G
D
D
S
S
Reel & Taping
Note: Pin Assignmen:
G: Gate
D: Drain
S: Source
2017. 07. 05
Revision No : 1
1/7
FTK20NS65P/F/DD
Absolute Maximum Ratings
Parameter
Symbol
Value
650
20
Unit
V
Drain - Source Voltage
VDSS
ID
Continuous drain current
( TC = 25°C )
( TC = 100°C )
A
13
A
Pulsed drain current 1)
Gate - Source voltage
IDM
60
A
VGSS
± 30
V
Avalanche energy, single pulse 2)
EAS
600
mJ
Avalanche energy, repetitive 3)
Avalanche current, repetitive 3)
EAR
IAR
0.4
20
mJ
A
Power Dissipation
( TC = 25°C )
PD
205
W
- Derate above 25°C
1.64
W/°C
°C
A
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
TJ, TSTG
IS
-55 to +150
20
IS,pulse
60
A
Thermal CharacteristicsTO-220/TO-263
Parameter
Symbol
Value
0.61
60
Unit
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJC
RθJA
Thermal Characteristics TO-220F
Parameter
Symbol
Value
3.7
Unit
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJC
RθJA
80
2017. 07. 05
Revision No : 1
2/7
FTK20NS65P/F/DD
Electrical Characteristics Tc = 25°C unless otherwise noted
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BVDSS
VGS(th)
IDSS
VGS=0 V, ID=0.25 mA
VDS=VGS, ID=0.25mA
VDS=650 V, VGS=0 V,
Tj = 25°C
650
2.5
-
-
V
V
3.5
4.5
Drain cut-off current
μA
-
-
-
-
10
-
1
-
Tj = 125°C
Gate leakage current, Forward
IGSSF
VGS=30 V, VDS=0 V
50
nA
nA
Gate leakage current, Reverse
Drain-source on-state resistance
IGSSR
VGS=-30 V, VDS=0 V
VGS=10 V, ID=10 A
Tj = 25°C
-
-
-
-
-
-
-50
RDS(on)
0.15
0.4
0.18
Ω
Ω
Tj = 150°C
-
-
Gate resistance
RG
f=1 MHz, open drain
4.5
Dynamic characteristics
Input capacitance
Ciss
Coss
Crss
td(on)
tr
VDS = 25 V, VGS = 0 V,
f = 1 MHz
-
-
-
-
-
2637
1250
17
-
-
-
-
-
pF
ns
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
VDD = 380V, ID = 10A
23
RG = 4.7Ω, VGS=10V
33
Turn-off delay time
td(off)
tf
-
-
113
11
-
-
Fall time
Gate charge characteristics
Gate to source charge
Gate to drain charge
Qgs
VDD=480 V, ID=10A,
VGS=0 to 10 V
-
-
-
-
10.3
13.7
39
-
-
-
-
nC
V
Qgd
Gate charge total
Qg
Gate plateau voltage
Vplateau
5.5
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
VSD
trr
VGS=0 V, IF=10A
VR=50 V, IF=20A,
dIF/dt=100 A/μs
-
-
-
-
1.0
513
7.5
29
-
-
-
-
V
ns
μC
A
Qrr
Irrm
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. IAS = 5A, VDD =60V, Starting Tj= 25°C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
2017. 07. 05
Revision No : 1
3/7
FTK20NS65P/F/DD
Typical Characteristics
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS=10V
Common Source
Common Source
Tc = 25°C
Tc = 25°C
VGS=7V
Pulse test
VDS=20 V
Pulse test
VGS=6.5V
VGS=6V
VGS=5.5V
Drain−source voltage DVS (V)
Gate−source voltageVGS (V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
VGS = 10V
Tc = 25°C
Pulse test
IDS=0.25 mA
Pulse test
Junction temperature Tj (°C)
Drain current ID (A)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
VGS=0 V
IDS=0.25 mA
Pulse test
VGS=10 V
IDS=10 A
Pulse test
Junction temperature Tj (°C)
Junction temperature Tj (°C)
2017. 07. 05
Revision No : 1
4/7
FTK20S65P/F/DD
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characterist
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C
= C
Ciss
Coss
ID = 10A
Crss
Notes:
f = 1 MHz
VGS=0 V
Total Gate Charge QG (nC)
Drain-Source Voltage VDS (V)
Figure 9.1 Maximum Safe Operating Area
TO-220F
Figure 9.2 Maximum Safe Operating Area
TO-220/TO-263
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220F
Figure 10.2 Power Dissipation vs. Temperature
TO-220/TO-263
Case temperature Tc (°C)
Case temperature Tc (°C)
Revision No : 0
5/7
2017. 07. 05
FTK20NS65P/F/DD
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by R
G
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Period
P. W.
VGS
(Driver)
D=
P.W.
Period
10V
=
VGS
I
FM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
2017. 07. 05
Revision No : 1
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FTK20NS65P/F/DD
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤ 0 1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0 3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
2017. 07. 05
Revision No : 1
7/7
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