FTK2N65D [FS]
2 Amps, 650 Volts N-CHANNEL MOSFET;
| 型号： | FTK2N65D |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | 2 Amps, 650 Volts N-CHANNEL MOSFET |
| 文件： | 总7页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTK2N65P / F / D / I
TECHNICAL DATA
2 Amps, 650 Volts
N-CHANNEL MOSFET
DESCRIPTION
These N-Channel enhancement mode power field effect
Transistors are produced using planar stripe, DMOS
technology.
This advanced technology has been especially tailored
to minimize on - state resistance , provide superior
switching performance,and Withstand high energy pulse
in the avalanche and commutaion mode .These devices
are well suited for high efficiency switch mode power
supply.
I :
1
TO - 251
TO - 252
D :
P :
F :
1
1
TO - 220
FEATURES
* RDS(ON) = 7.0Ω @V =10V I =1.2A
D
GS
* Ultra Low gate charge (typical 1.5nC)
* Lowreverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast sw itching capability
1
TO - 220F
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2Drain
1.Gate
3Source
ORDERING INFORMATION
Pin Assignment
Ordering Number
FTK2N65P
Package
Packing
1
G
2
D
3
S
TO-220
TO-220F
TO-251
TO-252
Tube
Tube
Tube
G
G
G
D
D
D
S
S
S
FTK2N65F
FTK2N65I
FTK2N65D
Tape Reel
Note: Pin Assignment:
G: Gate
D: Drain S: Source
2011. 08. 25
Revision No : 0
1/7
FTK2N65P / F / D / I
ABSOLUTE MAXIMUM RATINGS
(
TC = 25 , unless otherwise specified)
PARAMET
SYMBOL
VDSS
RATINGS
650
UNIT
V
Drain-Source Voltage
VGSS
IAR
Gate-Source Voltage
±30
2.0
V
A
Avalanche Current (Note 2)
TC = 25°C
2.0
1.2
A
A
Drain Current Continuous
Drain Current Pulsed (Note 2)
Avalanche Energy
ID
TC = 100°C
IDP
8.0
A
Repetitive(Note 2)
EAR
EAS
5.4
131
4.5
mJ
mJ
Single Pulse(Note 3)
Peak Diode Recovery
dv/dt
V/ns
TC = 25°C
Total Power Dissipation
(TO-251/252/TO-220/TO-220F)
45/45/62.5/31
0.36/0.36/0.5/0.25
+150
W
W / ˚C
˚C
PD
Derate above 25°C
TJ
Junction Temperature
Storage Temperature
TSTG
-55 ~ +150
˚C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤ 2.0A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
SYMBOL
RATINGS
UNIT
112
112
54
54
2.8
2.8
2
Thermal Resistance Junction-Ambient
θJA
˚C / W
Thermal Resistance Junction-Case
θJc
4
25
ELECTRICAL CHARACTERISTICS
(TJ
=
˚C , unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
IGSS
VGS = 0V, ID = 250µA
650
µA
VDS = 650V, VGS = 0V
10
Forward
Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
100
nA
nA
Gate-Body Leakage Current
-100
Breakdown Voltage Temperature
Coefficient
BVDSS
TJ
/
ID = 250 µA
0.7
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS( TH)
VDS = VGS , ID = 250µA
4.0
7
V
2.0
Static Drain-Source On-Resistance
Ω
RDS(ON) VGS = 10V, ID =1A
DYNAMIC CHARACTERISTICS
Input Capacitance
350
50
7
CISS
270
40
4
pF
pF
pF
VDS =25V, VGS =0V, f =1MHz
Output Capacitance
COSS
CRS S
Reverse Transfer Capacitance
2011. 08. 25
Revision No : 0
2/7
FTK2N65P / F / D / I
(TJ
=
˚C ,
Otherwise specified.)
25
unless
ELECTRICAL CHARACTERISTICS
PARAMETER
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
tD (ON)
tR
tD(OFF)
tF
10
30
30
30
10
1.5
5
ns
ns
VDD =300V, ID =2.0A, RG=25Ω
(Note 1,2)
Turn-Off Delay Time
Fall Time
ns
ns
nC
nC
nC
Total Gate Charge
QG
VDS=480V, VGS =10V, ID=2.0A
(Note 1, 2)
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS
V
VGS = 0 V, ISD = 2.0 A
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Timee
VSD
1.5
A
ISD
ISM
tRR
2.0
8.0
A
ns
250
1.0
VGS = 0 V, ISD = 2.0A,
di/dt = 100 A/µs (Note1)
µC
Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
2. Essentially Independent of Operating Temperature
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Revision No : 0
3/7
FTK2N65P / F / D / I
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under TestP
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Period
P. W.
VGS
(Driver)
D=
P.W.
Period
10V
=
VGS
I
FM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage DropVDD10VVDS
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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Revision No : 0
4/7
FTK2N65P / F / D / I
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width ≤ 1 μs
tF
tR
Duty Factor ≤ 0 1%
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T
50kΩ
QG
12V
10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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Revision No : 0
5/7
FTK2N65P / F / D / I
TYPICAL CHARACTERISTICS
2011. 08. 25
Revision No : 0
6/7
FTK2N65P / F / D / I
TYPICAL CHARACTERISTICS(Cont.)
2011. 08. 25
Revision No : 0
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