IRFU3711 [FREESCALE]
HEXFETPower MOSFET; ?? HEXFET功率MOSFET
| 型号： | IRFU3711 |
| 厂家： | 
Freescale |
| 描述： | HEXFETPower MOSFET |
| 文件： | 总8页 (文件大小：563K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFR/U3711
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
VDSS
20V
RDS(on) max
ID
6.5mΩ
110A
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
l 100%RGTested
Benefits
D-Pak
IRFR3711
I-Pak
IRFU3711
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Max
Symbol
Parameter
Units
VDS
VGS
Drain-Source Voltage
20
V
Gate-Source Voltage
± 20
100
Continuous Drain Current, VGS @ 10V
I
I
I
@ T = 25°C
C
D
D
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
69
@ T = 100°C
A
C
440
2.5
120
DM
Maximum Power Dissipation
P
P
@TA = 25°C
W
D
D
@T = 25°C Maximum Power Dissipation
C
Linear Derating Factor
0.96
W/°C
°C
TJ, T
Junction and Storage Temperature Range
-55 to +150
STG
Thermal Resistance
Symbol
Parameter
Typ
Max
Units
Junction-to-Case
RθJC
RθJA
RθJA
–––
–––
–––
1.04
50
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
°C/W
110
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IRFR/U3711
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min Typ Max Units
20 ––– –––
Conditions
VGS = 0V, ID = 250µA
V
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
–––
–––
1.0
5.2
6.7
6.5
8.5
3.0
140
20
VGS = 10V, ID = 15A
GS = 4.5V, ID = 12A
Ω
m
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
–––
–––
–––
–––
–––
V
VDS = VGS, ID = 250µA
VDS = 20V, VGS = 0V
–––
–––
–––
–––
–––
IDSS
V
DS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
GS = 20V
VGS = -20V
Drain-to-Source Leakage Current
µA
nA
100
200
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
IGSS
––– -200
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Forward Transconductance
Total Gate Charge
Min Typ Max Units
Conditions
VDS = 16V, ID = 30A
gfs
Qg
53
–––
–––
S
nC
Ω
–––
–––
–––
–––
0.3
29
44
ID = 15A
Qgs
Qgd
Qoss
RG
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
7.3
8.9
33
–––
–––
–––
2.5
VDS = 10V
VGS = 4.5V
V
GS = 0V, VDS = 10V
–––
12
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
VDD = 10V
ID = 30A
220
17
ns
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
12
Ciss
Coss
Crss
Input Capacitance
––– 2980 –––
––– 1770 –––
Output Capacitance
Reverse Transfer Capacitance
V
DS = 10V
pF
–––
280
–––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Typ
–––
–––
Max
Units
mJ
460
30
Avalanche Current
A
Diode Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min Typ Max Units
Conditions
MOSFET symbol
showing the
I
–––
–––
––– 110
S
A
V
Pulsed Source Current
(Body Diode)
integral reverse
I
–––
440
SM
p-n junction diode.
T = 25°C, I = 30A, V = 0V
J S GS
–––
–––
–––
–––
–––
–––
0.88
0.82
50
1.3
–––
75
V
t
Diode Forward Voltage
SD
T = 125°C, I = 30A, V = 0V
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns T = 25°C, I = 16A, VR = 10V
J F
rr
di/dt = 100A/µs
ns T = 125°C, I = 16A, VR = 10V
Q
t
61
92
nC
rr
48
72
rr
J
F
di/dt = 100A/µs
Q
65
98
nC
rr
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IRFR/U3711
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 150 C
J
T = 25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
110A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
J
100
V
= 25V
DS
V
=10V
GS
20µs PULSE WIDTH
10
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
3.0
4.0
5.0
6.0 7.0 8.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRFR/U3711
10
8
100000
10000
1000
I
D
=
30A
V
= 0V,
f = 1 MHZ
GS
V
= 16V
= 10V
C
= C + C
,
C
ds
SHORTED
DS
iss
gs
gd
V
C
= C
DS
rss
gd
C
= C + C
gd
oss
ds
6
Ciss
Coss
4
Crss
2
100
1
10
, Drain-to-Source Voltage (V)
100
0
V
DS
0
10
20
30
40
50
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
100µsec
1msec
°
T = 25 C
J
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
1
0.1
0.2
0.8
1.4
2.0
2.6
1
10
, Drain-toSource Voltage (V)
100
V
,Source-to-Drain Voltage (V)
SD
V
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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IRFR/U3711
RD
120
100
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
2
DM
0.10
0.05
0.1
0.01
t
1
t
0.02
0.01
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T =P
t / t
1
x Z
+ T
thJC C
J
DM
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFR/U3711
1400
1200
1000
800
600
400
200
0
I
15V
D
TOP
13A
19A
BOTTOM 30A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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IRFR/U3711
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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IRFR/U3711
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 30A.
ꢀ When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
Rθ is measured at TJ approximately at 90°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
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