IRFU3711PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFU3711PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总11页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95073A
IRFR3711PbF
IRFU3711PbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
VDSS
20V
RDS(on) max
ID
110A
6.5mΩ
l 100% RG Tested
l Lead-Free
D-Pak
IRFR3711
I-Pak
IRFU3711
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Max
Symbol
Parameter
Units
VDS
VGS
Drain-Source Voltage
20
V
Gate-Source Voltage
± 20
100
Continuous Drain Current, VGS @ 10V
I
I
I
@ T = 25°C
C
D
D
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
69
@ T = 100°C
A
C
440
2.5
120
DM
Maximum Power Dissipation
P
P
@TA = 25°C
W
D
D
@T = 25°C Maximum Power Dissipation
C
Linear Derating Factor
0.96
W/°C
°C
TJ, T
Junction and Storage Temperature Range
-55 to +150
STG
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ
Max
1.04
50
Units
RθJC
RθJA
RθJA
–––
–––
–––
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
°C/W
110
Notes through are on page 10
www.irf.com
1
1/7/05
IRFR/U3711PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min Typ Max Units
20 ––– –––
––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
V
∆
∆
V(BR)DSS/ TJ
RDS(on)
VGS(th)
–––
–––
1.0
5.2
6.7
6.5
8.5
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 20V, VGS = 0V
VDS = 16V, VGS = 0V
Ω
m
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
–––
–––
–––
–––
–––
3.0
V
–––
–––
–––
–––
–––
140
20
IDSS
Drain-to-Source Leakage Current
µA
nA
100
200
-200
VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 20V
VGS = -20V
IGSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Forward Transconductance
Total Gate Charge
Min Typ Max Units
Conditions
VDS = 16V, ID = 30A
ID = 15A
gfs
Qg
53
–––
29
–––
44
S
nC
Ω
–––
–––
–––
–––
0.3
Qgs
Qgd
Qoss
RG
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
7.3
8.9
33
–––
–––
–––
2.5
VDS = 10V
VGS = 4.5V
VGS = 0V, VDS = 10V
–––
12
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
VDD = 10V
ID = 30A
220
17
ns
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
12
VGS = 4.5V
Ciss
Coss
Crss
Input Capacitance
––– 2980 –––
––– 1770 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V
ƒ = 1.0MHz
pF
–––
280
–––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ
–––
–––
Max
Units
mJ
Symbol
EAS
IAR
460
30
Avalanche Current
A
Diode Characteristics
Symbol
Parameter
Min Typ Max Units
Conditions
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
I
–––
–––
––– 110
S
A
V
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
T = 25°C, I = 30A, V = 0V
J S GS
I
–––
440
SM
–––
–––
–––
–––
–––
–––
0.88
0.82
50
1.3
–––
75
V
t
Diode Forward Voltage
SD
T = 125°C, I = 30A, V = 0V
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns T = 25°C, I = 16A, VR = 10V
J F
rr
di/dt = 100A/µs
ns T = 125°C, I = 16A, VR = 10V
Q
t
61
92
nC
rr
48
72
rr
J
F
di/dt = 100A/µs
Q
65
98
nC
rr
2
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IRFR/U3711PbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 150 C
J
T = 25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
110A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
J
100
V
= 25V
DS
V
=10V
GS
20µs PULSE WIDTH
10
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
3.0
4.0
5.0
6.0 7.0 8.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFR/U3711PbF
10
8
100000
I
D
=
30A
V
= 0V,
f = 1 MHZ
GS
V
V
= 16V
= 10V
C
= C + C
,
C
ds
SHORTED
DS
DS
iss
gs
gd
C
= C
rss
gd
C
= C + C
gd
oss
ds
10000
1000
100
6
Ciss
Coss
4
Crss
2
1
10
, Drain-to-Source Voltage (V)
100
0
V
0
10
20
30
40
50
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
100µsec
1msec
°
T = 25 C
J
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
1
0.1
0.2
0.8
1.4
2.0
2.6
1
10
, Drain-toSource Voltage (V)
100
V
,Source-to-Drain Voltage (V)
SD
V
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFR/U3711PbF
RD
120
100
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
2
DM
0.10
0.05
0.1
0.01
t
1
t
0.02
0.01
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T =P
t / t
1
x Z
+ T
thJC C
J
DM
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U3711PbF
1400
1200
1000
800
600
400
200
0
I
15V
D
TOP
13A
19A
BOTTOM 30A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFR/U3711PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFR/U3711PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S E MB L Y
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WE E K 16
IRFU120
916A
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
12
34
LINE A
Note: "P" in as s embly line position
ASSEMBLY
LOT CODE
indicates "L ead-F ree"
OR
PART NUMBER
DAT E CODE
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12 34
YEAR 9 = 1999
ASSEMBLY
LOT CODE
WE E K 16
A = AS S E MB L Y S IT E CODE
8
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IRFR/U3711PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
WIT H AS S EMBL Y
DAT E CODE
YEAR 9 = 1999
WEEK 19
RECTIFIER
LOGO
IRFU120
919A
78
LOT CODE 5678
ASS EMBLED ON WW19, 1999
IN THE ASSEMBLY LINE "A"
56
LINE A
ASSEMBLY
LOT CODE
Note: "P" in assembly line
pos iti on i ndicates "Lead-F ree"
OR
PART NUMBER
DAT E CODE
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 9 = 1999
AS S E MB LY
LOT CODE
WEE K 19
A = AS S E MB L Y S IT E CODE
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9
IRFR/U3711PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 1.0mH
ꢀ When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
Rθ is measured at TJ approximately at 90°C
RG = 25Ω, IAS = 30A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 1/05
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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