AON7458 [FREESCALE]
250V,5A N-Channel MOSFET; 250V ， 5A N沟道MOSFET
| 型号： | AON7458 |
| 厂家： | 
Freescale |
| 描述： | 250V,5A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：592K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7458
250V,5A N-Channel MOSFET
General Description
The AON7458 is fabricated using an advanced high voltageMOSFET process that is designed to deliver high levels of
performance and robustness in popular AC-DC applications.By providing low RDS(on)
and C
, Ciss
rssalong with
guaranteed avalanche capability this device can beadoptedquickly into new and existing offline power supply
synchronous rectifiers for consumer, telecom, industrial
designs.This device is ideal for boost converters and
power supplies and LED backlighting.
Features
VDS
300V@150℃
5A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 0.56Ω
D
Top View
S
S
D
D
S
D
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
250
±30
5
V
V
VGS
TC=25°C
Continuous Drain
CurrentB
ID
TC=100°C
3.2
A
Pulsed Drain Current C
IDM
16
1.5
1.2
2.1
66
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
IDSM
A
IAR
A
EAR
EAS
dv/dt
mJ
132
5
mJ
V/ns
W
33
PD
Power Dissipation B
13
3.1
TC=100°C
W
W
°C
TA=25°C
PDSM
Power Dissipation A
2
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-50 to 150
Thermal Characteristics
Parameter
Symbol
Typ
30
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
RθJA
Steady-State
Steady-State
60
75
RθJC
3.1
3.7
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AON7458
250V,5A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
250
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
300
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
0.25
VDS=250V, VGS=0V
VDS=200V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
VGS=10V, ID=1.5A
VDS=40V, ID=1.5A
IS=1A,VGS=0V
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
Gate-Body leakage current
Gate Threshold Voltage
±100
4.3
nΑ
V
3.1
3.7
0.46
5
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.56
Ω
S
VSD
0.77
1
5
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
A
ISM
16
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
240
34
306
51
370
68
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
3.2
3.4
V
1.7
4.8
5.1
7.2
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
6.0
2.0
1.5
14
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=200V, ID=1.5A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=125V, ID=1.5A,
Turn-On Rise Time
12
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
23
Turn-Off Fall Time
12
trr
IF=1.5A,dI/dt=100A/µs,VDS=100V
IF=1.5A,dI/dt=100A/µs,VDS=100V
52
77
102
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
0.2
0.29
0.40
µC
A. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power Dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.1A, VDD=150V, RG=10ꢁ, Starting TJ=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AON7458
250V,5A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
1
10
8
VDS=40V
10V
6.5V
6.0V
-55°C
6
125°C
4
5.5V
25°C
2
VGS=5.0V
0.1
0
2
4
6
8
10
0
5
10
15
20
25
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
1.5
1.2
0.9
0.6
0.3
0.0
3
2.5
2
VGS=10V
ID=1.5A
VGS=10V
1.5
1
0.5
0
0
2
4
6
8
10
-100
-50
0
50
100
150
200
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+01
1.2
1.1
1
1.0E+00
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
1.0E-04
0.9
0.8
-100
-50
0
50
TJ (oC)
100
150
200
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 5: Break Down vs. Junction Temperature
Figure 6: Body-Diode Characteristics
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AON7458
250V,5A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
15
12
9
VDS=240V
ID=1.5A
Ciss
100
Coss
10
1
6
Crss
3
0
0
0
2
4
6
8
10
0.1
1
10
100
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
400
TJ(Max)=150°C
TC=25°C
10
1
300
200
100
0
RDS(ON)
limited
10µs
100µs
1ms
10ms
DC
0.1s
0.1
0.01
TJ(Max)=150°C
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.7°C/W
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AON7458
250V,5A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCASE (°C)
TCASE (°C)
Figure 12: Power De-rating (Note B)
Figure 13: Current De-rating (Note B)
100
80
60
40
20
0
TJ(Max)=150°C
TA=25°C
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
1
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
5/6
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AON7458
250V,5A N-Channel MOSFET
Gate Charge Test Circuit &Waveform
Vgss
Qgg
10V
+
VDC
+
VDC
Q
g
s
Qggd
Vds
-
-
DUTT
Vgss
Igg
Charge
Resistive Switching Test Circuit & Waveforms
RL
VVds
Vds
90%
10%
+
DUT
Vddd
Vgss
V
D
C
Rgg
-
Vgss
Vggs
t dd(on)
t
r
t
t
t oon
too
f
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
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