MBR0560-N [FORMOSA]
Chip Schottky Barrier Diodes - Silicon epitaxial planer type; 芯片肖特基势垒二极管 - 硅外延平面型
| 型号： | MBR0560-N |
| 厂家： | 
FORMOSA MS |
| 描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 文件： | 总2页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Chip Schottky Barrier Diodes
Formosa MS
MBR0520-N THRU MBR0560-N
Silicon epitaxial planer type
Features
SOD-323
Plastic package has Underwriters Laboratory
FlammabilityClassification 94V-O Utilizing Flame
RetardantEpoxy Molding Compound.
0.106 (2.7)
0.090 (2.3)
0.012(0.3) Typ.
For surface mounted applications.
0.053 (1.35)
0.045 (1.15)
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.044 (1.1)
0.035 (0.9)
0.035(0.9) Typ.
0.035(0.9) Typ.
Dimensions in inches and (millimeters)
Mechanical data
Case : Molded plastic, JEDECSOD-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.04 gram
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
IO
MIN.
TYP.
MAX.
0.5
UNIT
A
Forward rectified current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Forward surge current
IFSM
15
A
o
VR = VRRM TA = 25 C
0.5
10
mA
mA
Reverse current
IR
o
VR = VRRM TA = 125 C
o
Thermal resistance
Junction to ambient
RqJC
CJ
90
C / w
pF
Diode junction capacitance
Storage temperature
f=1MHz and applied 4vDC reverse voltage
120
o
TSTG
-55
+150
C
Operating
*1
*2
*3
*4
VRRM
VRMS
VR
VF
MARKING
temperature
SYMBOLS
CODE
o
( C)
(V)
(V)
(V)
(V)
MBR0520-N
MBR0530-N
MBR0540-N
MBR0550-N
MBR0560-N
A
B
C
D
E
20
30
40
50
60
14
21
28
35
42
20
30
40
50
60
0.40
0.45
-55 to +125
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
0.65
-55 to +150
RATINGAND CHARACTERISTIC CURVES (MBR0520-N THRU MBR0560-N)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
0.6
0.5
0.4
0.3
50
10
0.2
0.1
0
1.0
0.5
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
15
12
.01
.1
.3
.5
.7
.9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
9
8.3ms Single Half
Sine Wave
Tj=25 C
6
3
0
JEDEC method
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
50
1
5
10
100
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
10
350
300
250
200
1.0
Tj=75 C
150
100
50
.1
Tj=25 C
0
.01
.01
.05
.1
.5
1
5
10
50
100
0
20 40 60 80 100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
相关型号：
MBR0580-TP
Rectifier Diode, Schottky, 1 Element, 0.5A, 80V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
©2020 ICPDF网 联系我们和版权申明