HFM307 [FORMOSA]
Ultra fast recovery type; 超快恢复型
| 型号： | HFM307 |
| 厂家： | 
FORMOSA MS |
| 描述： | Ultra fast recovery type |
| 文件： | 总2页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Chip Silicon Rectifier
Formosa MS
HFM301 THRU HFM307
Ultra fast recovery type
Features
SMC
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
RetardantEpoxy Molding Compound.
0.276(7.0)
0.260(6.6)
0.012(0.3) Typ.
For surface mounted applications.
0.152(3.8)
0.144(3.6)
0.189(4.8)
0.173(4.4)
Exceeds environmental standards of MIL-S-19500 /
228
0.244(6.2)
0.228(5.8)
Low leakage current.
0.087(2.2)
0.071(1.8)
0.032(0.8) Typ.
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDECDO-214AB
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Dimensions in inches and (millimeters)
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gram
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
IO
MIN.
TYP.
MAX.
3.0
UNIT
A
o
Ambient temperature = 55 C
Forward rectified current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Forward surge current
IFSM
100
A
o
VR = VRRM TA = 25 C
10.0
300
uA
uA
Reverse current
IR
o
VR = VRRM TA = 100 C
o
Thermal resistance
Junction to ambient
Rq
15
70
C / w
pF
JA
Diode junction capacitance
Storage temperature
f=1MHz and applied 4vDC reverse voltage
CJ
o
TSTG
-55
+150
C
Operating
*1
*2
*3
*4
*5
MARKING
SYMBOLS
VRRM
VRMS
VR
VF
TRR
temperature
CODE
o
( C)
(V)
(V)
(V)
(V)
(nS)
HFM301
HFM302
HFM303
HFM304
HFM305
HFM306
HFM307
H31
H32
H33
H34
H35
H36
H37
50
35
50
1.0
100
200
300
400
600
800
70
100
200
300
400
600
800
*1 Repetitive peak reverse voltage
*2 RMS voltage
50
140
210
280
420
560
-55 to +150
1.3
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time
1.7
70
RATINGAND CHARACTERISTIC CURVES (HFM301 THRU HFM307)
FIG.1-TYPICAL FORWARD
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
CHARACTERISTICS
10
1.0
.1
3.6
3.0
2.4
1.8
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
1.2
0.6
0
0
20
40
60
80
100
120
140
160
180
200
Tj=25 C
AMBIENT TEMPERATURE ( C)
Pulse Width 300us
1% Duty Cycle
.01
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
80
60
40
20
0
.001
.4
1.6 1.8
.6
.8
1.0 1.2 1.4
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
8.3ms Single Half
Tj=25 C
Sine Wave
50W
NONINDUCTIVE
10W
NONINDUCTIVE
JEDEC method
(
)
(+)
D.U.T.
25Vdc
PULSE
GENERATOR
(NOTE 2)
(approx.)
50
1
5
10
100
(
)
(+)
NUMBER OF CYCLES AT 60Hz
1W
NON-
OSCILLISCOPE
(NOTE 1)
INDUCTIVE
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
175
trr
150
125
100
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
75
50
25
0
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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