HFM307-BS [FORMOSA]

Chip High Effciency Rectifiers;
HFM307-BS
型号: HFM307-BS
厂家: FORMOSA MS    FORMOSA MS
描述:

Chip High Effciency Rectifiers

功效 光电二极管
文件: 总7页 (文件大小:112K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Chip High Effciency Rectifiers  
Formosa MS  
HFM301-BS THRU HFM307-BS  
List  
1
2
2
2
2
3
4
4
4
5
6
6
7
List.................................................................................................  
Package outline...............................................................................  
Features..........................................................................................  
Mechanical data...............................................................................  
Maximum ratings .............................................................................  
Rating and characteristic curves........................................................  
Pinning information...........................................................................  
Marking...........................................................................................  
Suggested solder pad layout.............................................................  
Packing information..........................................................................  
Reel packing....................................................................................  
Suggested thermal profiles for soldering processes.............................  
High reliability test capabilities...........................................................  
http://www.formosams.com/  
TEL:886-2-22696661  
FAX:886-2-22696141  
Document ID  
DS-121322  
Issued Date  
2013/01/03  
Revised Date  
-
Revision  
A
Page.  
7
Page 1  
Chip High Effciency Rectifiers  
Formosa MS  
HFM301-BS THRU HFM307-BS  
3.0A Surface Mount High  
Effciency Rectifiers-50-1000V  
Package outline  
SMB-S  
Features  
Batch process design, excellent power dissipation offers  
better reverse leakage current and thermal resistance.  
0.220(5.6)  
0.205(5.2)  
Low profile surface mounted application in order to  
0.020(0.5) Typ.  
optimize board space.  
High current capability.  
Ultrafast recovery time for high efficiency.  
High surge current capability.  
0.083(2.1)  
0.075(1.9)  
0.138(3.5)  
0.122(3.1)  
Glass passivated chip junction.  
Lead-free parts meet RoHS requirments.  
Suffix "-H" indicates Halogen free parts, ex. HFM301-ΒS-H.  
Mechanical data  
Epoxy:UL94-V0 rated flame retardant  
Case : Molded plastic, DO-214AA /SMB-S  
0.067(1.7)  
0.060(1.5)  
Terminals : Solder plated, solderable per  
MIL-STD-750, Method 2026  
0.040(1.0) Typ.  
0.040 (1.0) Typ.  
Polarity : Indicated by cathode band  
Mounting Position : Any  
Dimensions in inches and (millimeters)  
Weight : Approximated 0.072 gram  
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)  
MAX.  
Symbol  
TYP.  
UNIT  
A
MIN.  
PARAMETER  
CONDITIONS  
IO  
3.0  
Forward rectified current  
See Fig.2  
100  
IFSM  
Forward surge current  
A
8.3ms single half sine-wave (JEDEC methode)  
VR = VRRM TJ = 25OC  
VR = VRRM TJ = 125OC  
5.0  
IR  
μA  
Reverse current  
300  
70  
CJ  
pF  
OC  
Diode junction capacitance  
Storage temperature  
f=1MHz and applied 4V DC reverse voltage  
+175  
-65  
TSTG  
Operating  
*5  
*1  
*3  
*4  
*2  
VRMS  
(V)  
VR  
VF  
trr  
SYMBOLS  
VRRM  
(V)  
temperature  
TJ, (OC)  
(V)  
(V)  
(ns)  
*1 Repetitive peak reverse voltage  
*2 RMS voltage  
HFM301-BS  
HFM302-BS  
HFM303-BS  
50  
35  
50  
100  
200  
400  
70  
100  
200  
400  
1.00  
1.30  
50  
140  
280  
420  
560  
700  
*3 Continuous reverse voltage  
*4 Maximum forward voltage@IF=3.0A  
*5 Maximum Reverse recovery time, note 1  
-55 to +150  
HFM304-BS  
HFM305-BS  
HFM306-BS  
HFM307-BS  
600  
600  
800  
800  
1.70  
75  
1000  
1000  
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A  
http://www.formosams.com/  
TEL:886-2-22696661  
FAX:886-2-22696141  
Document ID  
DS-121322  
Issued Date  
2013/01/03  
Revised Date  
-
Revision  
A
Page.  
7
Page 2  
Rating and characteristic curves (HFM301-BS THRU HFM307-BS)  
FIG.1-TYPICAL FORWARD  
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE  
CHARACTERISTICS  
10  
1.0  
.1  
3.6  
3.0  
2.4  
1.8  
P.C.B. Mounted on  
0.2" x 0.2" (5 mm x 5 mm)  
1.2  
Copper Pad Areas  
0.6  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
TJ=25 C  
Pulse Width 300us  
1% Duty Cycle  
LEAD TEMPERATURE (°C)  
.01  
.001  
FIG.4-MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
100  
1.6 1.8  
.4  
.6  
.8  
1.0 1.2 1.4  
80  
60  
40  
20  
0
FORWARD VOLTAGE,(V)  
8.3ms Single Half  
TJ=25 C  
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE  
RECOVERY TIME CHARACTERISTICS  
Sine Wave  
JEDEC method  
50W  
10W  
NONINDUCTIVE  
NONINDUCTIVE  
(
)
(+)  
D.U.T.  
25Vdc  
(approx.)  
PULSE  
GENERATOR  
(NOTE 2)  
50  
1
5
10  
100  
(
)
(+)  
NUMBER OF CYCLES AT 60Hz  
1W  
NON-  
INDUCTIVE  
OSCILLISCOPE  
(NOTE 1)  
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.  
2. Rise Time= 10ns max., Source Impedance= 50 ohms.  
FIG.5-TYPICAL JUNCTION CAPACITANCE  
175  
trr  
150  
125  
100  
|
|
|
|
|
|
|
|
+0.5A  
0
-0.25A  
75  
50  
25  
0
-1.0A  
1cm  
SET TIME BASE FOR  
50 / 10ns / cm  
.01  
.05  
.1  
.5  
1
5
10  
50  
100  
REVERSE VOLTAGE,(V)  
http://www.formosams.com/  
TEL:886-2-22696661  
FAX:886-2-22696141  
Document ID  
DS-121322  
Issued Date  
2013/01/03  
Revised Date  
-
Revision  
A
Page.  
7
Page 3  
Chip High Effciency Rectifiers  
Formosa MS  
HFM301-BS THRU HFM307-BS  
Pinning information  
Pin  
Simplified outline  
Symbol  
Pin1 cathode  
Pin2 anode  
1
2
1
2
Marking  
Type number  
HFM301-BS  
Marking code  
H31  
H32  
H33  
H34  
H35  
H36  
H37  
HFM302-BS  
HFM303-BS  
HFM304-BS  
HFM305-BS  
HFM306-BS  
HFM307-BS  
Suggested solder pad layout  
C
A
B
Dimensions in inches and (millimeters)  
PACKAGE  
SMB-S  
A
B
C
0.078 (2.00)  
0.059 (1.50)  
0.110 (2.80)  
http://www.formosams.com/  
TEL:886-2-22696661  
FAX:886-2-22696141  
Document ID  
DS-121322  
Issued Date  
2013/01/03  
Revised Date  
-
Revision  
A
Page.  
7
Page 4  
Chip High Effciency Rectifiers  
Formosa MS  
HFM301-BS THRU HFM307-BS  
Packing information  
P0  
P1  
d
E
F
W
B
A
P
D2  
D1  
T
C
W1  
D
unit:mm  
Symbol  
SMB-S  
Item  
Tolerance  
Carrier width  
A
B
C
d
D
D1  
D
D1  
D2  
E
0.1  
0.1  
0.1  
0.1  
2.0  
min  
2.0  
min  
0.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.3  
1.0  
3.81  
5.74  
2.24  
Carrier length  
Carrier depth  
Sprocket hole  
1.50  
13" Reel outside diameter  
13" Reel inner diameter  
7" Reel outside diameter  
7" Reel inner diameter  
Feed hole diameter  
Sprocket hole position  
Punch hole position  
Punch hole pitch  
Sprocket hole pitch  
Embossment center  
Overall tape thickness  
Tape width  
330.00  
50.00  
178.00  
62.00  
13.00  
1.75  
5.50  
8.00  
4.00  
2.00  
F
P
P0  
P1  
T
W
W1  
0.23  
12.00  
18.00  
Reel width  
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.  
http://www.formosams.com/  
TEL:886-2-22696661  
FAX:886-2-22696141  
Document ID  
DS-121322  
Issued Date  
2013/01/03  
Revised Date  
-
Revision  
Page.  
7
A
Page 5  
Chip High Effciency Rectifiers  
Formosa MS  
HFM301-BS THRU HFM307-BS  
Reel packing  
COMPONENT  
SPACING  
INNER  
BOX  
(m/m)  
REEL  
DIA,  
(m/m)  
CARTON  
SIZE  
(m/m)  
APPROX.  
REEL  
(pcs)  
BOX  
(pcs)  
PACKAGE  
SMB-S  
REEL SIZE  
13"  
CARTON  
(pcs)  
GROSS WEIGHT  
(kg)  
(m/m)  
4,000  
8.0  
8,000  
337*337*37  
330  
350*330*360  
64,000  
16.9  
Suggested thermal profiles for soldering processes  
1.Storage environment: Temperature=5oC~40oC Humidity=55%±25%  
2.Reflow soldering of surface-mount devices  
Critical Zone  
TL to TP  
Tp  
TP  
Ramp-up  
TL  
TL  
Tsmax  
Tsmin  
tS  
Preheat  
Ramp-down  
25  
t25oC to Peak  
Time  
3.Reflow soldering  
Profile Feature  
Soldering Condition  
Average ramp-up rate(TL to TP)  
<3oC/sec  
Preheat  
-Temperature Min(Tsmin)  
-Temperature Max(Tsmax)  
-Time(min to max)(ts)  
150oC  
200oC  
60~120sec  
Tsmax to TL  
-Ramp-upRate  
<3oC/sec  
Time maintained above:  
-Temperature(TL)  
-Time(tL)  
217oC  
60~260sec  
Peak Temperature(TP)  
255oC-0/+5oC  
Time within 5oC of actual Peak  
Temperature(tP)  
10~30sec  
Ramp-down Rate  
<6oC/sec  
Time 25oC to Peak Temperature  
<6minutes  
http://www.formosams.com/  
TEL:886-2-22696661  
FAX:886-2-22696141  
Document ID  
DS-121322  
Issued Date  
2013/01/03  
Revised Date  
-
Revision  
A
Page.  
7
Page 6  
Chip High Effciency Rectifiers  
Formosa MS  
HFM301-BS THRU HFM307-BS  
High reliability test capabilities  
Item Test  
1. Solder Resistance  
Conditions  
Reference  
MIL-STD-750D  
METHOD-2031  
at 260±5OC for 10±2sec.  
immerse body into solder 1/16"±1/32"  
at 245±5OC for 5 sec.  
2. Solderability  
MIL-STD-202F  
METHOD-208  
VR=80% rate at TJ=150OC for 168 hrs.  
Rated average rectifier current at TA=25OC for 500hrs.  
3. High Temperature Reverse Bias  
4. Forward Operation Life  
5. Intermittent Operation Life  
6. Pressure Cooker  
MIL-STD-750D  
METHOD-1038  
MIL-STD-750D  
METHOD-1027  
TA = 25OC, IF = IO  
On state: power on for 5 min.  
off state: power off for 5 min.  
on and off for 500 cycles.  
MIL-STD-750D  
METHOD-1036  
JESD22-A102  
15PSIG at TA=121OC for 4 hrs.  
MIL-STD-750D  
METHOD-1051  
-55OC to +125OC dwelled for 30 min.  
7. Temperature Cycling  
8. Forward Surge  
and transferred for 5min. total 10 cycles.  
MIL-STD-750D  
METHOD-4066-2  
8.3ms single half sine-wave , one surge.  
at TA=85OC, RH=85% for 1000hrs.  
at 175OC for 1000 hrs.  
MIL-STD-750D  
METHOD-1021  
9. Humidity  
MIL-STD-750D  
METHOD-1031  
10. High Temperature Storage Life  
http://www.formosams.com/  
TEL:886-2-22696661  
FAX:886-2-22696141  
Document ID  
DS-121322  
Issued Date  
2013/01/03  
Revised Date  
-
Revision  
A
Page.  
7
Page 7  

相关型号:

HFM307-T

Rectifier Diode,
RECTRON

HFM307-W

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2
RECTRON

HFM307B

SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER
RECTRON

HFM307B-T

Rectifier Diode,
RECTRON

HFM307L

SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere
RECTRON

HFM307L-T

Rectifier Diode,
RECTRON

HFM307L-W

Rectifier Diode,
RECTRON

HFM308

SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes)
RECTRON

HFM308

3A patch fast recovery diode 1000V SMC series
SUNMATE

HFM308-W

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2
RECTRON

HFM308B

SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER
RECTRON

HFM308B-W

暂无描述
RECTRON