TIP112TU [FAIRCHILD]

NPN Epitaxial Silicon Darlington Transistor, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 1000/RAIL;


型号：	TIP112TU
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	NPN Epitaxial Silicon Darlington Transistor, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 1000/RAIL 晶体电阻器晶体管开关 PC 局域网
文件：	总4页 (文件大小：52K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TIP110/111/112

Monolithic Construction With Built In Base-

Emitter Shunt Resistors

•

Complementary to TIP115/116/117

High DC Current Gain : h =1000 @ V =4V, I =1A(Min.)

Low Collector-Emitter Saturation Voltage

Industrial Use

TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Equivalent Circuit

Symbol

Parameter

Value

Units

Collector-Base Voltage : TIP110

100

CBO

: TIP111

: TIP112

Collector-Emitter Voltage : TIP110

100

: TIP111

: TIP112

CEO

EBO

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current (DC)

R1 10 k Ω

R2 0.6 k Ω

°C

Collector Dissipation (T =25°C)

Junction Temperature

Storage Temperature

150

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Max.

Units

(sus)

Collector-Emitter Sustaining Voltage

CEO

: TIP110

: TIP111

: TIP112

= 30mA, I = 0

100

Collector Cut-off Current

: TIP110

CEO

= 30V, I = 0

: TIP111

: TIP112

= 40V, I = 0

= 50V, I = 0

Collector Cut-off Current

: TIP110

CBO

= 60V, I = 0

: TIP111

: TIP112

= 80V, I = 0

= 100V, I = 0

Emitter Cut-off Current

DC Current Gain

= 5V, I = 0

EBO

= 4V, I = 1A

1000

500

= 4V, I = 2A

(sat)

Collector-Emitter Saturation Voltage

Base-Emitter ON Voltage

Output Capacitance

= 2A, I = 8mA

2.5

2.8

(on)

= 4V, I = 2A

= 10V, I = 0, f = 0.1MHz

100

Rev. A1, June 2001

Typical Characteristics

2.0

10000

1000

100

I_B= 500 uA

1.8

V_CE= 4V

I_B= 450 uA

1.6

I_B= 400 uA

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

I_B= 200 uA

I_B= 150 uA

0.01

0.1

I_C[A], COLLECTOR CURRENT

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

Figure 2. DC current Gain

100

1000

100

I_C= 500 I_B

f = 0.1 MHz

V_BE(sat)

V_CE(sat)

0.01

0.1

0.01

0.1

100

0.1

V_CB[V], COLLECTOR-BASE VOLTAGE

I_C[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

TIP 110

TIP 111

TIP 112

0.1

100

125

150

175

100

T_C[^oC], CASE TEMPERATURE

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area

Figure 6. Power Derating

Rev. A1, June 2001

Package Demensions

TO-220

4.50 ±0.20

9.90 ±0.20

(8.70)

+0.10

1.30

–0.05

ø3.60 ±0.10

(45

)

1.27 ±0.10

1.52 ±0.10

0.80 ±0.10

+0.10

–0.05

0.50

2.40 ±0.20

2.54TYP

[2.54 ±0.20

]

[2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

Rev. A1, June 2001

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

FAST^®

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

OPTOPLANAR™

PACMAN™

POP™

STAR*POWER™

Stealth™

ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DenseTrench™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TruTranslation™

TinyLogic™

UHC™

Power247™

PowerTrench^®

QFET™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MICROWIRE™

OPTOLOGIC™

QS™

QT Optoelectronics™

Quiet Series™

SLIENT SWITCHER^®

SMART START™

UltraFET^®

VCX™

FACT™

FACT Quiet Series™

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H3

相关型号：

TIP112U

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