TIP115 [MCC]
PNP Epitaxial Silicon Darlington Transistors; PNP外延硅达林顿晶体管
| 型号： | TIP115 |
| 厂家： | 
Micro Commercial Components |
| 描述： | PNP Epitaxial Silicon Darlington Transistors |
| 文件： | 总2页 (文件大小：367K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
TIP115
TIP116
TIP117
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
Micro Commercial Components
Features
·
·
·
·
High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.)
Low Collector-Emitter Saturation Voltage
Complementary to TIP110/111/112
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
PNP Epitaxial
Silicon Darlington
Transistors
·
·MaMxiomisuurme SReantsiitnivgitsy Level 1
Symbol
Rating
Rating
Unit
TO-220
VCEO
Collector-Emitter Voltage
TIP115
TIP116
TIP117
60
80
100
C
B
V
S
F
VCBO
Collector-Base Voltage
Q
TIP115
TIP116
TIP117
60
80
100
T
V
A
VEBO
IC
ICP
IB
Emitter-Base Voltage
Collector Current (DC)
5.0
2.0
4.0
50
2.0
V
A
A
mA
W
W
OC
OC
U
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation @TA=25OC
Collector Dissipation @TC=25OC
Junction Temperature
H
PC
K
50
TJ,
TSTG
-55 to +150
-55 to +150
Storage Temperature
Electrical Characteristics @ 25OC Unless Otherwise Specified
V
L
J
Symbl
Parameter
Min
Max
Units
D
R
G
OFF CHARACTERISTICS
Equivalent Circuit
N
VCEO(SUS)
Collector-Emitter Sustaining Voltage
C
(I C=30mAdc, IB=0)
TIP115
TIP116
TIP117
60
80
100
---
---
---
Vdc
B
ICEO
Collector Cut-off Current
(V CE=30Vdc, IB=0)
(VCE=40Vdc, IB=0)
(VCE=50Vdc, IB=0)
TIP115
TIP116
TIP117
---
---
---
2.0
2.0
2.0
mAdc
ICBO
Collector Cut-off Current
(V CB=60Vdc, IE=0)
R1
R2
1.Base
2.Collector
3.Emitter
TIP115
TIP116
TIP117
---
---
---
1.0
1.0
1.0
mAdc
mAdc
E
R1 10 k Ω
R2 0.6 k Ω
(V CB=80Vdc, I =0)
E
(V CB=100Vdc, IE=0)
Emitter Cut-off Current
(VBE=5.0Vdc, IC=0)
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ
IEBO
---
2.0
ꢇ ꢇ ꢇ ꢇ
INCHES
MM
ꢀꢁꢂ
A
B
C
D
F
G
H
J
K
L
Q
ꢂꢁꢄ
.595
.380
.160
.025
.142
.190
.110
.018
.500
.045
.100
.080
.045
.235
------
ꢂꢈꢉ
.620
.405
.190
.035
.147
.210
.130
.025
.562
.060
.120
.110
.055
.255
.050
ꢂꢁꢄ
ꢂꢈꢉ
15.75
10.29
4.82
0.89
3.73
5.33
3.30
0.64
14.27
1.52
3.04
2.79
1.39
6.48
1.27
ꢄꢆꢊꢃ
ON CHARACTERISTICS
hFE(1)
15.11
9.65
4.06
0.64
3.61
4.83
2.79
0.46
12.70
1.14
2.54
2.04
1.14
5.97
-----
DC Current Gain
(I C=1.0Adc, VCE=4.0Vdc)
1000
500
---
---
---
2.5
----
Vdc
Vdc
pF
(I =2.0Adc, VCE=4.0Vdc)
C
VCE(sat)
VBE(ON)
Cob
Collector-Emitter Saturation Voltage
(I =2.0Adc, IB=8.0mAdc)
C
Base-Emitter On Voltage
(I C=2.0Adc,VCE=4.0Adc)
Output Capacitance
---
---
2.8
200
R
S
T
(V CB=10V, IE=0, f=0.1MH z)
U
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
www.mccsemi.com
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Revision: A
2011/01/01
M C C
TM
Micro Commercial Components
Ordering Information :
Device
Packing
Part Number-BP
Bulk;1Kpcs/Box
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www.mccsemi.com
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Revision: A
2011/01/01
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