SGS5N150 [FAIRCHILD]
General Description; 概述
| 型号： | SGS5N150 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | General Description |
| 文件： | 总6页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
SGS5N150UF
General Description
Features
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
SGS5N150UF is designed for the Switching Power
Supply applications.
•
•
•
High Speed Switching
Low Saturation Voltage : V
High Input Impedance
= 4.7 V @ I = 5A
CE(sat)
C
Application
Switching Power Supply - High Input Voltage Off-line Converter
C
E
G
TO-220F
G
C
E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
SGS5N150UF
Units
V
V
V
Collector-Emitter Voltage
1500
CES
GES
Gate-Emitter Voltage
± 20
V
Collector Current
@ T
=
25°C
10
A
C
I
I
C
Collector Current
@ T = 100°C
5
A
C
Pulsed Collector Current
20
50
A
CM (1)
P
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T = 25°C
W
W
°C
°C
D
C
@ T = 100°C
20
C
T
-55 to +150
-55 to +150
J
T
stg
T
300
°C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
2.5
62.5
Units
°C/W
°C/W
R
R
Thermal Resistance, Junction-to-Case
--
--
θJC
θJA
Thermal Resistance, Junction-to-Ambient
©2003 Fairchild Semiconductor Corporation
SGS5N150UF Rev. B
Electrical Characteristics of IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
V
V
V
= 0V, I = 1mA
1500
--
--
--
--
--
V
CES
CES
GES
GE
CE
GE
C
I
I
Collector Cut-Off Current
= V
= V
, V = 0V
1.0
mA
nA
CES
GES
GE
G-E Leakage Current
, V = 0V
--
± 100
CE
On Characteristics
V
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
I
= 5mA, V = V
GE
2.0
--
3.0
4.7
4.0
5.5
V
V
GE(th)
C
C
CE
V
= 5A, V = 10V
CE(sat)
GE
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
780
130
70
--
--
--
pF
pF
pF
ies
V
= 10V V = 0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
10
15
--
--
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
d(on)
V
= 600 V
= 5A
=10Ω
= 10V
CC
Rise Time
r
I
C
Turn-Off Delay Time
Fall Time
30
50
120
--
d(off)
f
R
G
70
V
GE
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
190
100
290
30
on
off
ts
Inductive Load
T = 25°C
--
C
580
45
5
Q
Q
Q
g
V
V
= 600 V, I = 5A
= 10V
CE
GE
C
3
ge
gc
15
25
©2003 Fairchild Semiconductor Corporation
SGS5N150UF Rev. B
80
70
60
50
40
30
20
10
0
20 V
15 V
Vge=10V
50
40
30
20
10
0
Tc = 25
℃
Tc = 100℃
10 V
Vge=5 V
0
4
8
12
16
20
0
5
10
15
20
Vce [V]
Vce [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
8.0
12
Vge = 10V
Vge=10V
7.5
7.0
10
8
6.5
Ic =10A
6.0
5.5
5.0
6
4
Ic = 5A
2
4.5
0
4.0
25
50
75
100
125
150
20
40
60
80
100
120
140
℃
Tc [
]
℃
Tc [ ]
Fig 3. Maximum Collector Current vs.
Case Temperature
Fig 4. Saturation Voltage vs.
Case Temperature
10
10
Vcc = 600V
Load Current : peak of square wave
8
6
4
0.5
1
0.2
0.1
0.05
Pdm
0.1
0.02
0.01
t1
2
t2
Duty cycle : 50%
Tc = 100 o
C
Duty factor D = t1 / t2
single pulse
1E-4
Peak Tj = Pdm
0.1
×Zthjc + TC
Power Dissipation = 12W
0
0.01
1E-5
1E-3
0.01
1
10
0.1
1
10
100
1000
Rectangular Pulse Duration [sec]
Frequency [kHz]
Fig 5. Load Current vs. Frequency
Fig 6. Transient Thermal Impedance
of IGBT Junction to Case
©2003 Fairchild Semiconductor Corporation
SGS5N150UF Rev. B
1200
1000
800
600
400
200
0
Common Emitter
10 RL = 120Ω, VCC = 600V
TC = 25oC
8
Cies
6
4
2
0
Coes
Cres
1
10
0
10
20
30
GateCharge, Qg[nC]
Vce [V]
Fig 7. Typical Capacitance vs.
Fig 8. Typical Gate Charge Characteristic
Collector to Emitter Voltage
1200
600
500
400
300
200
100
Vcc = 600V
Ic = 5A
Vcc = 600V
Rg = 10Ω
Vge = 10V
Ic = 10A
Esw
Eon
1000
800
600
400
200
Ic = 5A
Ic = 3A
Eoff
20
40
60
80
100
0
5
10
15
20
25
30
℃
Tc [
]
Rg [Ω]
Fig 10. Typical Switching Loss vs.
Case Temperature
Fig 9. Typical Switching Loss vs.
Gate Resistance
1.2
Vcc = 600V
Rg = 10Ω
Esw
Tc = 100℃
1.0
0.8
0.6
0.4
0.2
10
Eon
Eoff
Safe Operating Area
Vge = 20V, Tc = 100℃
1
4
6
8
10
1
10
100
Vce [V]
1000
Ic [A]
Fig 11. Typical Switching Loss vs.
Collector Current
Fig 12. Turn-Off SOA
©2003 Fairchild Semiconductor Corporation
SGS5N150UF Rev. B
Package Dimension
TO-220F (FS PKG CODE AQ)
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
SGS5N150UF Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT Quiet series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
QS™
QT Optoelectronics™ TinyLogic®
HiSeC™
Quiet Series™
TruTranslation™
I2C™
OCX™
RapidConfigure™
RapidConnect™
UHC™
UltraFET®
OCXPro™
Across the board. Around the world.™
Across the board. Around the world™
The Power Franchise™
OPTOLOGIC®
OPTOPLANAR™
SILENT SWITCHER® VCX™
SMART START™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I2
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