SGS5N60RUFD [FAIRCHILD]
Short Circuit Rated IGBT; 短路额定IGBT
| 型号： | SGS5N60RUFD |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Short Circuit Rated IGBT |
| 文件： | 总8页 (文件大小：617K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2001
IGBT
SGS5N60RUFD
Short Circuit Rated IGBT
General Description
Features
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
•
•
•
•
•
Short circuit rated 10us @ T = 100°C, V = 15V
C
GE
High speed switching
Low saturation voltage : V
High input impedance
= 2.2 V @ I = 5A
CE(sat)
C
CO-PAK, IGBT with FRD : t = 37ns (typ.)
rr
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
C
E
G
TO-220F
G C E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
SGS5N60RUFD
Units
V
V
V
Collector-Emitter Voltage
600
CES
GES
Gate-Emitter Voltage
± 20
V
Collector Current
@ T
=
25°C
8
A
C
I
I
C
Collector Current
@ T = 100°C
5
A
C
Pulsed Collector Current
15
A
CM (1)
T
Short Circuit Withstand Time
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ T = 100°C
10
µs
A
SC
C
I
I
@ T = 100°C
8
F
C
56
35
A
FM
P
@ T
=
25°C
W
W
°C
°C
D
C
@ T = 100°C
14
C
T
-55 to +150
-55 to +150
J
T
stg
T
300
°C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Typ.
--
Max.
Units
°C/W
°C/W
°C/W
R
R
R
(IGBT)
3.5
5.0
θJC
θJC
θJA
(DIODE)
--
Thermal Resistance, Junction-to-Ambient
--
62.5
©2001 Fairchild Semiconductor Corporation
SGS5N60RUFD Rev. A
Electrical Characteristics of IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
V
V
= 0V, I = 250uA
600
--
--
--
--
V
CES
GE
C
∆B
/
VCES
J
= 0V, I = 1mA
0.6
V/°C
GE
C
∆T
I
I
Collector Cut-off Current
G-E Leakage Current
V
V
= V
= V
, V = 0V
--
--
--
--
250
µA
CES
GES
CE
CES
GE
, V = 0V
± 100
nA
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 5mA, V = V
GE
5.0
--
6.0
2.2
2.5
8.5
2.8
--
V
V
V
GE(th)
C
C
C
CE
= 5A,
= 8A,
V
V
= 15V
= 15V
Collector to Emitter
Saturation Voltage
GE
GE
V
CE(sat)
--
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
354
67
--
--
--
pF
pF
pF
ies
V
= 30V V = 0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
14
Switching Characteristics
t
t
t
t
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
13
24
--
--
ns
ns
nS
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
34
50
200
--
V
R
= 300 V, I = 5A,
C
d(off)
f
CC
= 40Ω, V = 15V,
136
88
G
GE
Inductive Load, T = 25°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
C
on
off
107
195
13
--
280
--
ts
t
t
t
t
d(on)
r
26
--
Turn-Off Delay Time
Fall Time
40
60
350
--
V
= 300 V, I = 5A,
C
d(off)
f
CC
R
= 40Ω, V = 15V,
250
103
220
323
G
GE
Inductive Load, T = 125°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
C
on
off
ts
--
--
V
= 300 V, V = 15V
GE
C
CC
T
Short Circuit Withstand Time
10
--
--
µs
sc
@ T = 100°C
Q
Total Gate Charge
--
--
--
--
16
3
24
6
nC
nC
nC
nH
g
V
V
= 300 V, I = 5A,
= 15V
CE
GE
C
Q
Q
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
ge
gc
7
14
--
Le
Measured 5mm from PKG
7.5
Electrical Characteristics of DIODE
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
--
Typ.
1.4
1.3
37
Max.
1.7
--
Units
T
T
T
T
T
T
T
T
=
25°C
= 100°C
25°C
= 100°C
25°C
= 100°C
25°C
= 100°C
C
C
C
C
C
C
C
C
V
Diode Forward Voltage
I
= 8A
F
V
FM
--
=
--
55
--
t
I
Diode Reverse Recovery Time
ns
A
rr
--
55
=
--
3.5
4.5
65
5.0
--
Diode Peak Reverse Recovery
Current
I = 8A,
F
rr
di/dt =200A/µs
--
=
--
138
--
Q
Diode Reverse Recovery Charge
nC
rr
--
124
©2001 Fairchild Semiconductor Corporation
SGS5N60RUFD Rev. A
25
20
15
10
5
20
16
12
8
20V
Common Emitter
TC = 25℃
15V
Common Emitter
GE = 15V
℃ ━━
V
TC
= 25
℃
T
C = 125 ------
12V
VGE = 10V
4
0
0
1
10
0
2
4
6
8
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 2. Typical Saturation Voltage
Characteristics
Fig 1. Typical Output Chacracteristics
8
4.0
VCC = 300V
Load Current : peak of square wave
Common Emitter
VGE = 15V
3.5
10A
6
4
2
0
3.0
2.5
2.0
5A
IC = 3A
1.5
1.0
Duty cycle : 50%
TC = 100℃
Power Dissipation = 9W
-50
0
50
100
150
0.1
1
10
100
1000
℃
[
Case Temperature, TC
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
16
12
8
20
Common Emitter
Common Emitter
℃
TC = 25
℃
T
C = 125
16
12
8
10A
10A
12
4
4
5A
5A
IC = 3A
IC = 3A
8
0
0
0
4
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. V
Fig 5. Saturation Voltage vs. V
GE
GE
©2001 Fairchild Semiconductor Corporation
SGS5N60RUFD Rev. A
700
600
500
400
300
200
100
0
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
±
15V
VCC = 300V, VGE
IC = 5A
=
℃
TC = 25
℃ ━━
= 25
TC
TC = 125 ------
℃
Ton
Tr
100
Cies
Coes
Cres
10
1
10
Collector - Emitter Voltage, VCE [V]
10
100
Gate Resistance, RG [Ω]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 7. Capacitance Characteristics
1000
Common Emitter
±
15V
VCC = 300V, VGE
C = 5A
=
I
℃ ━━
= 25
TC
℃
TC = 125 ------
Eoff
Eon
Toff
Eoff
100
Tf
Toff
Common Emitter
Tf
VCC = 300V, VGE = ± 15V
IC = 5A
℃ ━━
= 25
TC
100
℃
TC = 125 ------
10
10
100
Gate Resistance, RG [Ω]
10
100
Gate Resistance, RG [Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
Common Emitter
±
VGE = ± 15V, RG = 40Ω
VGE
TC
TC = 125 ------
=
15V, RG = 40Ω
℃ ━━
25
℃
℃ ━━
= 25
TC
=
1000
℃
TC = 125 ------
100
Ton
Tr
Toff
Tf
Toff
Tf
100
10
3
4
5
6
7
8
9
10
3
4
5
6
7
8
9
10
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
SGS5N60RUFD Rev. A
1000
15
12
9
Common Emitter
VGE = ± 15V, RG = 40Ω
Common Emitter
RL = 60Ω
TC
= 25℃ ━━
℃
TC = 25
TC = 125℃ ------
300V
200V
VCC = 100V
Eoff
100
Eon
6
3
0
0
3
6
9
12
15
18
3
4
5
6
7
8
9
10
Gate Charge, Qg [nC]
Collector Current, IC [A]
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
50
40
10
IC MAX. (Pulsed)
10
1
50us
IC MAX. (Continuous)
100us
㎳
1
DC Operation
0.1
0.01
Single Nonrepetitive
℃
Pulse TC = 25
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
℃
VGE = 20V, TC = 100
10 100
Collector-Emitter Voltage, VCE [V]
1
0.3
1
10
100
1000
1
1000
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristic
Fig 16. Turn-Off SOA Characteristics
10
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
Pdm
t1
t2
single pulse
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T
C
0.01
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2001 Fairchild Semiconductor Corporation
SGS5N60RUFD Rev. A
100
10
1
100
10
1
TC
= 25℃ ━━
VR = 200V
IF = 8A
T
C = 100℃ ------
℃ ━━
= 25
TC
TC = 100 ------
℃
0.1
100
1000
0
1
2
3
di/dt [A/us]
Forward Voltage Drop, VF [V]
Fig 19. Reverse Recovery Current
Fig 18. Forward Characteristics
500
100
VR = 200V
IF = 8A
VR = 200V
IF = 8A
℃ ━━
TC
=
℃ ━━
25
TC
T
=
25
400
300
200
100
0
80
60
40
20
0
℃
TC = 100 ------
℃
C = 100 ------
100
1000
100
1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
©2001 Fairchild Semiconductor Corporation
SGS5N60RUFD Rev. A
Package Dimension
TO-220F (FS PKG CODE AQ)
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
SGS5N60RUFD Rev. A
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PowerTrench®
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QS™
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H1
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