SG1577SY_12 [FAIRCHILD]

Dual Synchronous DC/DC Controller; 双同步DC / DC控制器
SG1577SY_12
型号: SG1577SY_12
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Dual Synchronous DC/DC Controller
双同步DC / DC控制器

控制器
文件: 总14页 (文件大小:848K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
November 2012  
SG1577  
Dual Synchronous DC/DC Controller  
Features  
Description  
The SG1577 is a high-efficiency, voltage-mode, dual-  
channel, synchronous DC/DC PWM controller for two  
independent outputs. The two channels are operated  
out of phase. The internal reference voltage is trimmed  
to 0.7 V ±1.5%. It is connected to the error amplifier’s  
positive terminal for voltage feedback regulation. The  
soft-start circuit ensures the output voltage can be  
gradually and smoothly increased from zero to its final  
regulated value. The soft-start pin can also be used for  
chip-enable function. When two soft-start pins are  
grounded, the chip is disabled and the total operation  
current can be reduced to under 0.55 mA. The fixed-  
frequency is programmable from 60 kHz to 320 kHz.  
The Over-Current Protection (OCP) level can be  
programmed by an external current sense resistor. It  
has two integrated sets of internal MOSFET drivers.  
SG1577 is available in the 20-pin SOP package.  
.
.
.
Integrated Two Sets of MOSFET Drivers  
Two Independent PWM Controllers  
Constant Frequency Operation: Free-running Fixed  
Frequency Oscillator Programmable: 60 kHz to  
320 kHz  
.
.
.
Wide Range Input Supply Voltage: 8~15 V  
Programmable Output as Low as 0.7 V  
Internal Error Amplifier Reference Voltage:  
0.7 V ±1.5%  
.
.
.
.
.
Two Soft-Start / EN Functions  
Programmable Over-Current Protection (OCP)  
30 V HIGH Voltage Pin for Bootstrap Voltage  
Output Over-Voltage Protection (OVP)  
SOP 20-Pin  
Applications  
.
.
CPU and GPU Vcore Power Supply  
Power Supply Requiring Two Independent Outputs  
Ordering Information  
Operating  
Temperature Range  
Packing  
Part Number  
Package  
Method  
SG1577SY  
-40°C to +85°C  
20-Lead, Small Outline Package (SOP-20)  
Tape & Reel  
© 2009 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.6  
www.fairchildsemi.com  
Application Diagram  
Figure 1. Typical Application  
Internal Block Diagram  
Figure 2. Functional Block Diagram  
© 2009 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.6  
www.fairchildsemi.com  
2
Marking Diagram  
F: Fairchild Logo  
Z: Plant Code  
X: 1-Digit Year Code for SOP  
Y: 1-Digit Week Code for SOP  
TT: 2-Digit Die Run Code  
T: Package Type (S = SOP)  
P: Z=Lead Free + ROHS  
Compatible  
F ZXYTT  
SG1577  
TPM  
Y=Green Package  
M: Manufacture Flow Code  
Figure 3. Top Mark  
© 2009 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.6  
www.fairchildsemi.com  
3
Pin Configuration  
Figure 4. SOP-20 Pin Configuration (Top View)  
Pin Definitions  
Name  
Pin #  
Type  
Description  
Switching frequency programming pin. An external resistor connecting from  
this pin to GND can program the switching frequency. The switching  
frequency would be 60 kHz when RT is open and become 320 kHz when a  
30 kΩ RT resistor is connected.  
RT  
1
Frequency Select  
Inverting input of the error amplifier. It is normally connected to the  
switching power supply output through a resistor divider.  
IN1  
2
3
4
5
Feedback  
Output of the error amplifier and input to the PWM comparator. It is used  
for feedback loop compensation.  
COMP1  
SS1/ENB  
CLP1  
Compensation  
Soft Start/Enable  
A 10 µA internal current source charging an external capacitor for soft start.  
Pull down this pin and pin 17 can disable the chip.  
Over Current  
Protection  
Over-current protection for high-side MOSFET. Connect a resistor from this  
pin to the high-side supply voltage to program the OCP level.  
BST1  
DH1  
6
7
Boost Supply  
Supply for high-side driver. Connect to the internal bootstrap circuit.  
High-Side Drive Channel 1, high-side MOSFET gate driver pin.  
Switch-node connection to inductor. For channel 1 high-side driver’s  
reference ground.  
CLN1  
8
Switch Node  
DL1  
PGND  
VCC  
DL2  
9
Low-Side Drive  
Driver Ground  
Power Supply  
Low-Side Drive  
Low-side MOSFET gate driver pin.  
Driver circuit GND supply. Connect to low-side MOSFET GND.  
Supply voltage input.  
10  
11  
12  
Low-side MOSFET gate driver pin.  
Switch-node connection to inductor. For channel 2, high-side driver’s  
reference ground.  
CLN2  
13  
Switch Node  
DH2  
14  
15  
High-Side Drive Channel 2 high-side MOSFET gate driver pin.  
BST2  
Boost Supply  
Supply for high-side driver. Connect to the internal bootstrap circuit.  
Over-Current  
Protection  
Over-current protection for the high-side MOSFET. Connect a resistor from  
this pin to the high-side supply voltage to program the OCP level.  
CLP2  
16  
17  
18  
A 10 µA internal current source charging an external capacitor for soft start.  
Pull down this pin and pin 4 can disable the chip.  
SS2/ENB  
COMP2  
Soft-Start/Enable  
Compensation  
Output of the error amplifier and input to the PWM comparator. It is used  
for feedback-loop compensation.  
Inverting input of the error amplifier. It is normally connected to the  
switching power supply output through a resistor divider.  
IN2  
19  
20  
Feedback  
GND  
Control Ground  
Control circuit GND supply.  
© 2009 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.6  
www.fairchildsemi.com  
4
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only. All voltage values, except differential voltages, are given with  
respect to the network ground terminal. Stresses beyond those listed under "absolute maximum ratings" may cause  
permanent damage to the device.  
Symbol  
Parameter  
Min.  
Max.  
16  
Unit  
V
VCC  
Supply Voltage, VCC to GND  
BST1(or 2) - CLN1(or 2) BST1(2) to CLN1(2)  
16  
V
CLN1(or 2) -GND  
CLN1(2) to GND for 100 ns Transient  
-4  
18  
V
BST1(or 2) - GND  
BST1(2) to GND for 100 ns Transient  
30  
V
DH1(or 2) - CLN1(or 2)  
16  
V
CLN1(or 2), DL1(or 2)  
-0.3  
VCC+0.3  
±1  
V
PGND  
ΘJA  
PGND to GND  
V
Thermal Resistance, Junction-to-Air  
Operating Junction Temperature  
Storage Temperature Range  
Human Body Model, JESD22-A114  
Charged Device Model, JESD22-C101  
90  
°C/W  
°C  
°C  
kV  
V
TJ  
-40  
-65  
+125  
+150  
2.5  
TSTG  
ESD  
750  
Recommended Operating Conditions  
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended  
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not  
recommend exceeding them or designing to absolute maximum ratings.  
Symbol  
VCC  
Parameter  
Min.  
+8  
Max.  
+15  
Unit  
V
Supply Voltage  
-40  
TA  
Operating Ambient Temperature  
+85  
°C  
© 2009 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.6  
www.fairchildsemi.com  
5
Electrical Characteristics  
VCC=12 V, TA =25°C, unless otherwise noted.  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Unit  
Oscillator  
R
RT=OPEN  
54  
288  
-10  
85  
60  
66  
352  
10  
Oscillator Frequency  
fosc  
KHz  
RRT=GND  
320  
20 kΩRRT  
Total Accuracy  
fosc,rt  
%
%
90  
95  
Maximum Duty Cycle  
DON_MAX  
Error Amplifier  
Internal Reference Voltage  
VCC=8 V, VCC=15 V  
TA=0~85°C  
VREF  
VREF  
AVOL  
0.6895  
0.7000  
0.03  
77  
0.7105  
V
mV/°C  
dB  
Temperature Coefficient(1)  
Open-Loop Voltage Gain  
Unity Gain Bandwidth  
BW  
3.5  
MHz  
dB  
Power Supply Rejection Ratio  
Output Source Current  
Output Sink Current  
PSRR  
ISOURCE  
ISINK  
50  
IN1=IN2=0.6 V  
IN1=IN2=0.8 V  
IN1=IN2=0.6 V  
IN1=IN2=0.8 V  
60  
80  
100  
µA  
500  
µA  
Output Voltage  
Output Voltage  
VH COMP  
VL COMP  
5
V
100  
mV  
Soft Start  
ISOURCE  
V
CLPVCLN  
CLPVCLN  
Soft-Start Charge Current  
8
10  
12  
µA  
µA  
V
Soft-Start Discharge Current  
ISINK  
Protections  
IOSCET  
0.8  
1.0  
1.2  
90  
120  
150  
20  
150  
125  
µA  
°C  
°C  
%
OC Sink Current  
VCC=12 V  
TOT  
Over-Temperature  
TOT_hys  
VOVP  
Over-Temperature Hysteresis  
Over-Voltage Protection of IN  
112  
1.0  
VOVP/VIN  
Output  
VBST - VCLN=12 V,VDH  
-
High-Side Current Source  
IDH  
1.7  
A
VCLN=6 V  
RDH  
IDL  
3.3  
1.7  
3.1  
40  
4.0  
A
High-Side Sink Resistor  
Low-Side Current Source  
Low-Side Sink Resistor  
Dead Time(2)  
VBST - VCLN=12 V  
VCC=12 V,VDL=6 V  
VCC=12 V  
1.0  
10  
RDL  
tDT  
4
70  
ns  
VCC=12 V, DH and DL=1000 pF  
Total Operating Current  
ICC_OP  
3.3  
4.3  
5.3  
mA  
mA  
Operating Supply Current  
Standby Current (Disabled)  
VCC=12 V, No Load  
ICC_SBY  
0.55  
1.00  
SS1/ENB=SS2/ENB=0 V  
Notes:  
1. Not test in production, 30 pcs sample.  
2. When VDL falls less than 2 V relative to VDH rising to 2 V.  
© 2009 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
SG1577 • Rev. 1.0.6  
6
Typical Performance Characteristics  
Unless otherwise noted, values are for VCC=12 V, TA=+25°C, and according to Figure 1.  
Figure 5. V5p0 Power On with 1.6 A Load  
Figure 7. V5p0 Power On with 15 A Load  
Figure 9. V5p0 Power Off with 15 A Load  
Figure 6. V3p3 Power On with 3 A Load  
Figure 8. V3p3 Power On with 8 A Load  
Figure 10. V3p3 Power Off with 8 A Load  
© 2009 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.6  
www.fairchildsemi.com  
7
Typical Performance Characteristics (Continued)  
Unless otherwise noted, values are for VCC=12 V, TA=+25°C, and according to Figure 1.  
Figure 11. 3p3 and V5p0 Phase Shift with Light Load  
Figure 12. V3p3 and V5p0 Phase Shift  
with Heavy Load  
Figure 13. Dead Time with Light Load (Rise Edge)  
Figure 14. Dead Time with Light Load (Fall Edge)  
Figure 15. Dead Time with Heavy Load (Rise Edge)  
Figure 16. Dead Time with Heavy Load (Fall Edge)  
© 2009 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.6  
www.fairchildsemi.com  
8
Typical Performance Characteristics (Continued)  
Unless otherwise noted, values are for VCC=12 V, TA=+25°C, and according to Figure 1.  
Figure 17. Load Transient Response (Step-Up)  
Figure 18. Load Transient Response (Step-Down)  
20k Ω/22 nF in Compensation Loop  
20 kΩ/22 nF in Compensation Loop  
Figure 19. Over-Current Protection (OCP)  
Figure 20. Over-Current Protection (Hiccup Mode)  
150  
Iocset 1  
140  
Iocset 2  
130  
120  
110  
100  
90  
-40-25-105203550658095℃  
Temperature (oC)  
Figure 21. Over-Voltage Protection (OVP)  
Figure 22. IOCSET vs. Temperature  
© 2009 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.6  
www.fairchildsemi.com  
9
Functional Description  
The SG1577 is a dual-channel voltage-mode PWM  
controller. It has two sets of synchronous MOSFET  
driving circuits. The two channels are running 180-  
degrees out of phase. The following descriptions  
highlight the advantages of the SG1577 design.  
Prevent CLN Noise in SG1577  
To prevent noise/spike on CLN from affecting OCP  
judgment, SG1577 internal has a 500 ns blanking time  
to filter out this noise/spike on CLN at each turn-on  
cycle and counts for eight cycles of CLP>CLN, then  
OCP is asserted.  
Soft-Start  
An internal startup current (10 µA) flows out of SS/EN  
pin to charge an external capacitor. During the startup  
sequence, SG1577 isn’t enabled until the SS/ENB pin is  
VOFFSET of OCP Comparator  
240  
220  
200  
180  
160  
140  
120  
100  
80  
higher than 1.2 V. From 1.2 V to (1.2 + 1.6 x DON  
/
DON_MAX V, PWM duty cycle gradually increases  
)
following SS/ENB pin voltage to bring output rising. After  
(1.2 + 1.6 x DON / DON_MAX) V, the soft-start period ends  
and SS/ENB pin continually goes up to 4.8 V. When  
input power is abnormal, the external capacitor on SS  
pin is shorted to ground and the chip is disabled.  
60  
40  
20  
0
TSOFTSTART = CSS/ENB x 1.6 x DON / DON_MAX / ISOURCE  
(1)  
4
6
8
10  
12  
14  
16  
VCC (V)  
Figure 23. VOFFSET1/2 vs. VCC  
Over-Current Protection (OCP)  
Over-current protection is implemented by sensing the  
voltage drop across the drain and the source of  
external high-side MOSFET. Over-current protection is  
triggered when the voltage drop on external high-side  
MOSFET’s RDS(ON) is greater than the programmable  
current limit voltage threshold. 120 µA flowing through  
an external resistor between input voltage and the CLP  
pin sets the threshold of current limit voltage. When  
over-current condition is true, the system is protected  
against the cycle-by-cycle current limit. A counter  
counts a series of over-current peak values to eight  
cycles; the soft-start capacitor is discharged by a 1 µA  
current until the voltage on SS pin reaches 1.2 V.  
During the discharge period, the high-side driver is  
turned off and the low-side driver is turned on. Once  
the voltage on SS/ENB pin is under 1.2 V, the normal  
soft-start sequence is initiated and the 10 µA current  
charges the soft-start capacitor again.  
Error Amplifier  
The IN1 and IN2 pins are connected to the  
corresponding internal error amplifier’s inverting input  
and the outputs of the error amplifiers are connected to  
the corresponding COMP1 and COMP2 pins. The  
COMP1 and COMP2 pins are available for control-loop  
compensation externally. Non-inverting inputs are  
internally tied to a fixed 0.7 V ±1.5% reference voltage.  
Oscillator Operation  
The SG1577 has a frequency-programmable oscillator.  
The oscillator is running at 60 kHz when the RT pin is  
floating. The oscillator frequency can be adjusted from  
60 kHz up to 320 kHz by an external resistor RRT  
between RT pin and the ground. The oscillator  
generates a sawtooth wave that has 90% rising duty.  
Sawtooth wave voltage threshold is from 1.2 V to 2.8 V.  
The frequency of oscillator can be programmed by the  
following equation:  
IL(OCP)= [(RSENSE x IOCSET + VOFFSET) / RDS(ON)  
(VIN - VOUT) x VOUT / (fOSC x LOUT x VIN x 2) ]  
-
(2)  
where, VOFFSET (=10 mV) is the offset voltage  
contributed by the internal OCP comparator.  
fOSC, RT(kHz) = 60kHz + 8522 / RRT(k)  
(3)  
Design Notes  
Output Driver  
VCC noise/spike affects the offset voltage of the OCP  
comparator Figure 23 shows the VOFFSET1/2 vs. VCC  
variation curve, which is a simulation result by IC  
internal circuitry. Calculate the OCP variation between  
The high-side gate drivers need an external  
bootstrapping circuit to provide the required boost  
voltage. The highest gate driver’s output (15 V is the  
allowed) on high-side and low-side MOSFETs forces  
external MOSFETs to have the lowest RDS(ON), which  
results in higher efficiency.  
VCC=12 V and VCC=4 V. For Ch1 or Ch2, VOFFSET  
/
RDS(ON) = 172 mV / 9 m= 19 A is affected. VCC>10 V is  
the recommended range; lower, and the comparator’s  
offset voltage is large.  
Over-Temperature Protection (OTP)  
The device is over-temperature protected. When chip  
temperature is over 150°C, the chip enters tri-state  
(high-side driver is turned off). The hysteresis is 20°C.  
© 2009 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.6  
www.fairchildsemi.com  
10  
Type II Compensation Design  
(for Output Capacitors with High ESR)  
2. Compensation Frequency Equations  
The compensation network consists of the error  
amplifier and the impedance networks ZC and Zf, as  
Figure 24 shows.  
SG1577 is a voltage-mode controller; the control loop is  
a single voltage feedback path, including an error  
amplifier and PWM comparator, as shown in Figure 24.  
To achieve fast transient response and accurate output  
regulation, an adequate compensator design is  
necessary. A stable control loop has a 0 dB gain  
crossing with -20 dB/decade slope and a phase margin  
greater than 45°.  
Figure 25. Compensation Loop  
fP1 = 0  
1
fZ1  
=
(6)  
2π × R2 × C2  
1
fP2  
=
2π × R2 × (C1 //C2)  
Figure 24. Closed Loop  
Figure 26 shows the DC-DC converter gain vs.  
frequency. The compensation gain uses external  
impedance networks ZC and Zf to provide a stable,  
high-bandwidth loop.  
1. Modulator Frequency Equations  
The modulator transfer function is the small-signal  
transfer function of VOUT/VE/A. This transfer function is  
dominated by a DC gain and the output filter (LO and CO)  
with a double-pole frequency at fLC and a zero at FESR.  
The DC gain of the modulator is the input voltage (VIN)  
divided by the peak-to-peak oscillator voltage  
High crossover frequency is desirable for fast transient  
response, but often jeopardizes the system stability. To  
cancel one of the LC filter poles, place the zero before  
the LC filter resonant frequency. Place the zero at 75%  
of the LC filter resonant frequency. Crossover frequency  
should be higher than the ESR zero, but less than 1/5 of  
the switching frequency. The second pole should be  
placed at half the switching frequency.  
V
RAMP(=1.6 V). The first step is to calculate the complex  
conjugate poles contributed by the LC output filter. The  
output LC filter introduces double pole,  
a
-40 dB / decade gain slope above its corner resonant  
frequency, and a total phase lag of 180°. The resonant  
frequency of the LC filter expressed as:  
1
f
=
P(LC)  
(4)  
2π ×  
L × C  
O O  
The next step of compensation design is to calculate the  
ESR zero. The ESR zero is contributed by the ESR  
associated with the output capacitance. Note that this  
requires that the output capacitor should have enough  
ESR to satisfy stability requirements. The ESR zero of  
the output capacitor is expressed as:  
1
fZ(ESR)  
=
(5)  
2π × CO × ESR  
Figure 26. Bode Plot  
© 2009 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.6  
www.fairchildsemi.com  
11  
Layout Considerations  
Layout is important in high-frequency switching converter  
design. If designed improperly, PCB can radiate  
excessive noise and contribute to converter instability.  
components close to their pins with a local, clear  
GND connection or directly to the ground plane.  
7
8
Place the bootstrap capacitor near the BSTx and  
CLNx pins.  
Place the PWM power stage components first. Mount all  
the power components and connections in the top layer  
with wide copper areas. The MOSFETs of buck,  
inductor, and output capacitor should be as close to  
each other as possible to reduce the radiation of EMI  
due to the high-frequency current loop. If the output  
capacitors are placed in parallel to reduce the ESR of  
capacitor, equal sharing ripple current should be  
considered. Place the input capacitor near the drain of  
high-side MOSFET. In multi-layer PCB, use one layer as  
power ground and have a separate control signal ground  
as the reference for all signals. To avoid the signal  
ground being affected by noise and have best load  
regulation, it should be connected to the ground terminal  
of output.  
The resistor on the RT pin should be near this pin  
and the GND return should be short and kept away  
from the noisy MOSFET’s GND (which is short  
together with IC’s PGND pin to GND plane on back  
side of PCB).  
9
Place the compensation components close to the  
INx and COMPx pins.  
10 The feedback resistors for both regulators should  
be located as close as possible to the relevant INx  
pin with vias tied straight to the ground plane as  
required.  
11 Minimize the length of the connections between the  
input capacitors, CIN, and the power switchers  
(MOSFETs) by placing them nearby.  
Follow the below guidelines for best performance:  
1
2
A two-layer printed circuit board is recommended.  
12 Position both the ceramic and bulk input capacitors  
as close to the upper MOSFET drain as possible  
and make the GND returns (from the source of  
lower MOSFET to VIN capacitor GND) short.  
Use the bottom layer of the PCB as a ground plane  
and make all critical component ground connections  
through vias to this layer.  
3
4
5
Keep the metal running from the CLNx terminal to  
the output inductor short.  
13 Position the output inductor and output capacitors  
between the upper MOSFET and lower MOSFET  
and the load.  
Use copper-filled polygons on the top (and bottom,  
if two-layer PCB) circuit layers for the CLN node.  
14 AGND should be on the clearer plane and kept  
away from the noisy MOSFET GND.  
The small-signal wiring traces from the DLx and  
DHx pins to the MOSFET gates should be kept  
short and wide enough to easily handle the several  
amps of drive current.  
15 PGND should be short, together with MOSFET  
GND, then through vias to GND plane on the  
bottom of PCB.  
6
The critical, small-signal components include any  
bypass capacitors (SMD-type of capacitors applied  
at VCC and SSx/ENB pins), feedback components  
(resistor divider), and compensation components  
(between INx and COMPx pins). Position those  
16 Prevent spike happen on CLN pin a proper snubber  
circuit for CLN and GND is recommend.  
© 2009 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.6  
www.fairchildsemi.com  
12  
Physical Dimensions  
12.80±0.20  
11.430  
A
11.930  
11.430  
20  
11  
B
7.50±0.10  
10.325  
10.922  
8.422  
1
PIN ONE  
INDICATOR  
10  
1.27  
C B A  
0.50 TYP  
0.51  
1.25 TYP  
0.35  
1.27 TYP  
M
0.25  
LAND PATTERN RECOMMENDATION  
SEE DETAIL A  
2.65 MAX  
0.33  
0.20  
C
0.10  
C
0.20±0.10  
SEATING PLANE  
PIN#1 IDENTIFICATION OPTIONS  
20  
0.75  
0.25  
X 45°  
20  
20  
(R0.10)  
(R0.10)  
GAGE PLANE  
0.25  
8°  
0°  
SEATING PLANE  
0.40~1.27  
(1.40)  
PIN #1  
INDICATOR  
DETAIL A  
SCALE: 2:1  
PIN #1  
INDICATOR  
PIN #1  
INDICATOR  
1
1
1
NOTES: UNLESS OTHERWISE SPECIFIED  
A) THIS PACKAGE CONFORMS TO JEDEC MS-013.  
OPTION 2  
OPTION 1  
OPTION 3  
PIN 1 ONLY  
B) ALL DIMENSIONS ARE IN MILLIMETERS.  
C) DIMENSIONS DO NOT INCLUDE MOLD  
FLASH OR BURRS.  
HALF MOON & PIN 1  
HALF MOON ONLY  
D) LANDPATTERN RECOMMENDATION IS FSC DESIGN  
E) FILENAME AND REVISION: M20BREV4  
Figure 27. 20-Lead, Small Outline Package (SOP)  
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner  
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or  
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the  
warranty therein, which covers Fairchild products.  
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:  
http://www.fairchildsemi.com/packaging/.  
© 2009 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.6  
www.fairchildsemi.com  
13  
© 2009 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.6  
www.fairchildsemi.com  
14  

相关型号:

SG1577SZ

Dual Synchronous DC/DC Controller
FAIRCHILD

SG1577_10

Dual Synchronous DC/DC Controller
FAIRCHILD

SG1577_12

Dual Synchronous DC/DC Controller
FAIRCHILD

SG1595J

Analog Multiplier Or Divider, 1 Func, 3MHz Band Width, CDIP14
MICROSEMI

SG15A

FAST RECOVERY RECTIFIERS
BL Galaxy Ele

SG15B

FAST RECOVERY RECTIFIERS
BL Galaxy Ele

SG15D

FAST RECOVERY RECTIFIERS
BL Galaxy Ele

SG15G

FAST RECOVERY RECTIFIERS
BL Galaxy Ele

SG15J

FAST RECOVERY RECTIFIERS
BL Galaxy Ele

SG15K

FAST RECOVERY RECTIFIERS
BL Galaxy Ele

SG15M

FAST RECOVERY RECTIFIERS
BL Galaxy Ele

SG15N12DP

绝缘栅双极型晶体管(IGBT)Isolated Gate Bipolar Transistor (IGBTs),IGBT分立器件Discrete IGBTs。
SIRECTIFIER