SG1577SZ [FAIRCHILD]

Dual Synchronous DC/DC Controller; 双同步DC / DC控制器
SG1577SZ
型号: SG1577SZ
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Dual Synchronous DC/DC Controller
双同步DC / DC控制器

控制器
文件: 总14页 (文件大小:648K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
April 2008  
SG1577  
Dual Synchronous DC/DC Controller  
Features  
Description  
The SG1577 is a high-efficiency, voltage-mode, dual-  
channel, synchronous DC/DC PWM controller for two  
independent outputs. The two channels are operated  
out of phase. The internal reference voltage is trimmed  
to 0.7V±1.5%. It is connected to the error amplifier’s  
positive terminal for voltage feedback regulation. The  
soft-start circuit ensures the output voltage can be  
gradually and smoothly increased from zero to its final  
regulated value. The soft-start pin can also be used for  
chip-enable function. When two soft-start pins are  
grounded, the chip is disabled and the total operation  
current can be reduced to under 0.55mA. The fixed-  
frequency is programmable from 60kHz to 320kHz. The  
Over-Current Protection (OCP) level can be  
programmed by an external current sense resistor. It  
has two integrated sets of internal MOSFET drivers.  
SG1577 is available in 20-pin SOP and DIP packages.  
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Integrated Two Sets of MOSFET Drivers  
Two Independent PWM Controllers  
Constant Frequency Operation: Free-running Fixed  
Frequency Oscillator Programmable: 60kHz to  
320kHz  
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Wide Range Input Supply Voltage: 8~15V  
Programmable Output as Low as 0.7V  
Internal Error Amplifier Reference Voltage:  
0.7V±1.5%  
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Two Soft-Start / EN Functions  
Programmable Over-Current Protection (OCP)  
30V HIGH Voltage Pin for Bootstrap Voltage  
Output Over-Voltage Protection (OVP)  
SOP and DIP 20-pin  
Applications  
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CPU and GPU Vcore Power Supply  
Power Supply Requiring Two Independent Outputs  
Ordering Information  
Operating  
Temperature Range  
Part Number  
Package  
Packing Method  
SG1577SZ  
SG1577DZ  
-40°C to +85°C  
20-pin Small Outline Package (SOP)  
20-pin Dual In-Line Package (DIP)  
Tape & Reel  
Tube  
-40°C to +85°C  
All packages are lead free per JEDEC: J-STD-020B standard.  
© 2007 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.1  
www.fairchildsemi.com  
Application Diagram  
Figure 1.  
Typical Application  
Internal Block Diagram  
Figure 2.  
Functional Block Diagram  
© 2007 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.1  
www.fairchildsemi.com  
2
Pin Configuration  
Figure 3. SOP-20 and DIP-20 Pin Configuration (Top View)  
Pin Definitions  
Name  
Pin #  
Type  
Description  
Switching frequency programming pin. An external resistor connecting from  
this pin to GND can program the switching frequency. The switching  
frequency would be 60kHz when RT is open and become 320kHz when a  
30kΩ RT resistor is connected.  
RT  
1
Frequency Select  
Inverting input of the error amplifier. It is normally connected to the  
switching power supply output through a resistor divider.  
IN1  
2
3
4
5
Feedback  
Output of the error amplifier and input to the PWM comparator. It is used  
for feedback loop compensation.  
COMP1  
SS1/ENB  
CLP1  
Compensation  
Soft Start/Enable  
A 10µA internal current source charging an external capacitor for soft start.  
Pull down this pin and pin 17 can disable the chip.  
Over Current  
Protection  
Over-current protection for high-side MOSFET. Connect a resistor from this  
pin to the high-side supply voltage to program the OCP level.  
BST1  
DH1  
6
7
Boost Supply  
Supply for high-side driver. Connect to the internal bootstrap circuit.  
High-Side Drive Channel 1, high-side MOSFET gate driver pin.  
Switch-node connection to inductor. For channel 1 high-side driver’s  
reference ground.  
Low-Side Drive Low-side MOSFET gate driver pin.  
CLN1  
8
Switch Node  
DL1  
PGND  
VCC  
DL2  
9
10  
11  
12  
Driver Ground  
Power Supply  
Driver circuit GND supply. Connect to low-side MOSFET GND.  
Supply voltage input.  
Low-Side Drive Low-side MOSFET gate driver pin.  
Switch-node connection to inductor. For channel 2, high-side driver’s  
reference ground.  
High-Side Drive Channel 2 high-side MOSFET gate driver pin.  
CLN2  
13  
Switch Node  
DH2  
14  
15  
BST2  
Boost Supply  
Supply for high-side driver. Connect to the internal bootstrap circuit.  
Over-Current  
Protection  
Over-current protection for the high-side MOSFET. Connect a resistor from  
this pin to the high-side supply voltage to program the OCP level.  
CLP2  
16  
17  
18  
A 10µA internal current source charging an external capacitor for soft start.  
Pull down this pin and pin 4 can disable the chip.  
SS2/ENB  
COMP2  
Soft-Start/Enable  
Compensation  
Feedback  
Output of the error amplifier and input to the PWM comparator. It is used  
for feedback-loop compensation.  
Inverting input of the error amplifier. It is normally connected to the  
switching power supply output through a resistor divider.  
IN2  
19  
20  
GND  
Control Ground Control circuit GND supply.  
© 2007 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.1  
www.fairchildsemi.com  
3
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device  
reliability. The absolute maximum ratings are stress ratings only. All voltage values, except differential voltages, are  
given with respect to the network ground terminal. Stresses beyond those listed under "absolute maximum ratings"  
may cause permanent damage to the device.  
Symbol  
Parameter  
Supply voltage, VCC to GND  
Min.  
Max.  
Unit  
VCC  
16  
V
BST1(or 2) -  
CLN1(or 2)  
BST1(2) to CLN1(2)  
16  
18  
V
V
CLN1(or 2) -  
GND  
CLN1(2) to GND for 100ns Transient  
-4  
DH1(or 2) -  
CLN1(or 2)  
16  
V
V
CLN1(or 2),  
DL1(or 2)  
-0.3  
VCC+0.3  
PGND  
ΘJA  
PGND to GND  
± 1  
90  
V
°C/W  
°C  
Thermal Resistance, Junction-Air  
Operating Junction Temperature  
Storage Temperature Range  
TJ  
-40  
-65  
+125  
+150  
2.5  
TSTG  
°C  
Electrostatic  
Discharge Protection  
Level  
Human Body Model (HBM)  
Charged Device Model (CDM)  
kV  
ESD  
750  
V
Recommended Operating Conditions  
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended  
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not  
recommend exceeding them or designing to absolute maximum ratings.  
Symbol  
VCC  
Parameter  
Min.  
+8  
Max.  
+15  
Unit  
V
Supply voltage  
Operating Ambient Temperature  
-40  
TA  
+85  
°C  
© 2007 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.1  
www.fairchildsemi.com  
4
Electrical Characteristics  
VCC=12V, TA =25°C, unless otherwise noted.  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Unit  
Oscillator  
RRT=OPEN  
54  
288  
-10  
85  
60  
66  
352  
10  
Oscillator Frequency  
fosc  
KHz  
RRT=GND  
320  
20kΩ<RRT  
Total Accuracy  
fosc,rt  
%
%
90  
95  
Maximum Duty Cycle  
DON_MAX  
Error Amplifier  
Internal Reference Voltage  
VCC=8V,VCC=15V  
VREF  
AVOL  
0.6895 0.7000 0.7105  
V
dB  
Open-loop Voltage Gain  
Unity Gain Bandwidth  
Power Supply Rejection Ratio  
Output Source Current  
Output Sink Current  
77  
3.5  
50  
BW  
MHz  
dB  
PSRR  
ISOURCE  
ISINK  
IN1=IN2=0.6V  
IN1=IN2=0.8V  
IN1=IN2=0.6V  
IN1=IN2=0.8V  
60  
80  
500  
5
100  
µA  
µA  
Output Voltage  
Output Voltage  
VH COMP  
VL COMP  
V
100  
mV  
Soft Start  
ISOURCE  
V
CLPVCLN  
CLPVCLN  
Soft-start Charge Current  
8
10  
12  
µA  
µA  
V
Soft-start Discharge Current  
ISINK  
Protections  
IOSCET  
0.8  
1.0  
1.2  
90  
120  
150  
20  
150  
125  
4.0  
µA  
°C  
°C  
%
OC Sink Current  
VCC=12V  
TOT  
Over-Temperature  
TOT_HYS  
VOVP  
Over-Temperature Hysteresis  
112  
1.0  
1.0  
10  
Over-Voltage Protection of IN VOVP/VIN  
Output  
IDH  
1.7  
3.3  
1.7  
3.1  
40  
A
A
High-side Current Source  
High-side Sink Resistor  
Low-side Current Source  
Low-side Sink Resistor  
Dead Time(1)  
VBST - VCLN=12V,VDH - VCLN=6V  
RDH  
IDL  
VBST - VCLN=12V  
VCC=12V,VDL =6V  
VCC=12V  
RDL  
4
ns  
TDT  
70  
VCC=12V, DH & DL=1000pF  
Total Operating Current  
ICC_OP  
3.3  
4.3  
5.3  
mA  
mA  
Operating Supply Current  
Standby Current (Disabled)  
VCC=12V, No load  
ICC_SBY  
0.55  
1.00  
SS1/ENB=SS2/ENB=0V  
Note:  
1. When VDL falls less than 2V relative to VDH rising to 2V.  
© 2007 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
SG1577 • Rev. 1.0.1  
5
Typical Performance Characteristics  
Unless otherwise noted, values are for VCC=12V, TA=+25°C, and according to Figure 1.  
Figure 4. V5p0 Power On with 1.6A Load  
Figure 6. V5p0 Power On with 15A Load  
Figure 8. V5p0 Power Off with 15A Load  
Figure 5. V3p3 Power On with 3A Load  
Figure 7. V3p3 Power On with 8A Load  
Figure 9. V3p3 Power Off with 8A Load  
© 2007 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.1  
www.fairchildsemi.com  
6
Typical Performance Characteristics (Continued)  
Unless otherwise noted, values are for VCC=12V, TA=+25°C, and according to Figure 1.  
Figure 10. 3p3 & V5p0 Phase Shift with Light Load  
Figure 12. Dead Time with Light Load (Rise Edge)  
Figure 14. Dead Time with Heavy Load (Rise Edge)  
Figure 11. V3p3 & V5p0 Phase Shift with Heavy Load  
Figure 13. Dead Time with Light Load (Fall Edge)  
Figure 15. Dead Time with Heavy Load (Fall Edge)  
© 2007 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.1  
www.fairchildsemi.com  
7
Typical Performance Characteristics (Continued)  
Unless otherwise noted, values are for VCC=12V, TA=+25°C, and according to Figure 1.  
Figure 16. Load Transient Response (Step-Up)  
Figure 17. Load Transient Response (Step-Down)  
20kΩ/22nF in Compensation Loop  
20kΩ/22nF in Compensation Loop  
Figure 18. Over-Current Protection (OCP)  
Figure 19. Over-Current Protection (Hiccup Mode)  
150  
Iocset 1  
140  
Iocset 2  
130  
120  
110  
100  
90  
-40-25-105203550658095℃  
Temperature (oC)  
Figure 20. Over-Voltage Protection (OVP)  
Figure 21. IOCSET vs. Temperature  
© 2007 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.1  
www.fairchildsemi.com  
8
Functional Description  
The SG1577 is a dual-channel voltage-mode PWM  
controller. It has two sets of synchronous MOSFET  
driving circuits. The two channels are running 180-  
degrees out of phase. The following descriptions  
highlight the advantages of the SG1577 design.  
Oscillator Operation  
The SG1577 has a frequency-programmable oscillator.  
The oscillator is running at 60kHz when the RT pin is  
floating. The oscillator frequency can be adjusted from  
60kHz up to 320kHz by an external resistor RRT  
between RT pin and the ground. The oscillator  
generates a sawtooth wave that has 90% rising duty.  
Sawtooth wave voltage threshold is from 1.2V to 2.8V.  
The frequency of oscillator can be programmed by the  
following equation:  
Soft Start  
An internal start-up current (10µA) flows out of SS/EN  
pin to charge an external capacitor. During the start-up  
sequence, SG1577 isn’t enabled until the SS/ENB pin is  
higher than 1.2V. From 1.2V to (1.2 + 1.6 x DON  
/
DON_MAX) V, PWM duty cycle gradually increases  
(3)  
fOSC, RT(kHz) = 60kHz + 8522 / RRT(k)  
following SS/ENB pin voltage to bring output rising.  
After (1.2 + 1.6 x DON / DON_MAX) V, the soft-start period  
ends and SS/ENB pin continually goes up to 4.8V.  
When input power is abnormal, the external capacitor  
on SS pin is shorted to ground and the chip is disabled.  
Output Driver  
The high-side gate drivers need an external  
bootstrapping circuit to provide the required boost  
voltage. The highest gate driver’s output (15V is the  
allowed) on high-side and low-side MOSFETs forces  
external MOSFETs to have the lowest RDS(ON), which  
results in higher efficiency.  
(1)  
TSOFTSTART = CSS/ENB x 1.6 x DON / DON_MAX / ISOURCE  
Over-Current Protection (OCP)  
Over-current protection is implemented by sensing the  
voltage drop across the drain and the source of external  
high-side MOSFET. Over-current protection is triggered  
when the voltage drop on external high-side MOSFET’s  
RDS(ON) is greater than the programmable current limit  
voltage threshold. 120µA flowing through an external  
resistor between input voltage and the CLP pin sets the  
threshold of current limit voltage. When over-current  
condition is true, the system is protected against the  
cycle-by-cycle current limit. A counter counts a series of  
over-current peak values to eight cycles; the soft-start  
capacitor is discharged by a 1µA current until the  
voltage on SS pin reaches 1.2V. During the discharge  
period, the high-side driver is turned off and the low-  
side driver is turned on. Once the voltage on SS/ENB  
pin is under 1.2V, the normal soft-start sequence is  
initiated and the 10µA current charges the soft-start  
capacitor again.  
Over-Temperature Protection (OTP)  
The device is over-temperature protected. When chip  
temperature is over 150oC, the chip enters tri-state  
(high-side driver is turned off). The hysteresis is 20oC.  
Type II Compensation Design  
(for Output Capacitors with High ESR)  
SG1577 is a voltage-mode controller; the control loop is  
a single voltage feedback path, including an error  
amplifier and PWM comparator, as shown in Figure 22.  
To achieve fast transient response and accurate output  
regulation, an adequate compensator design is  
necessary. A stable control loop has a 0dB gain  
crossing with -20dB/decade slope and a phase margin  
greater than 45°.  
IL(OCP)= [(RSENSE x IOCSET + VOFFSET) / RDS(ON)  
(VIN - VOUT) x VOUT / (fOSC x LOUT x VIN x 2) ]  
-
(2)  
where, VOFFSET (10mV) is the offset voltage  
contributed by the internal OCP comparator.  
Error Amplifier  
The IN1 and IN2 pins are connected to the  
corresponding internal error amplifier’s inverting input  
and the outputs of the error amplifiers are connected to  
the corresponding COMP1 and COMP2 pins. The  
COMP1 and COMP2 pins are available for control-loop  
compensation externally. Non-inverting inputs are  
internally tied to a fixed 0.7V ± 1.5% reference voltage.  
Figure 22. Closed Loop  
© 2007 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.1  
www.fairchildsemi.com  
9
1. Modulator Frequency Equations  
fP1 = 0  
fZ1  
The modulator transfer function is the small-signal  
transfer function of VOUT/VE/A. This transfer function is  
dominated by a DC gain and the output filter (LO and  
CO) with a double-pole frequency at fLC and a zero at  
FESR. The DC gain of the modulator is the input  
voltage (VIN) divided by the peak-to-peak oscillator  
voltage VRAMP(=1.6V). The first step is to calculate the  
complex conjugate poles contributed by the LC output  
filter. The output LC filter introduces a double pole,  
-40dB / decade gain slope above its corner resonant  
frequency, and a total phase lag of 180 degrees. The  
resonant frequency of the LC filter expressed as:  
1
=
2π × R2 × C2  
(6)  
1
fP2  
=
2π × R2 × (C1 //C2)  
Figure 24 shows the DC-DC converter gain vs.  
frequency. The compensation gain uses external  
impedance networks ZC and Zf to provide a stable, high-  
bandwidth loop.  
High crossover frequency is desirable for fast transient  
response, but often jeopardizes the system stability. To  
cancel one of the LC filter poles, place the zero before  
the LC filter resonant frequency. Place the zero at 75%  
of the LC filter resonant frequency. Crossover frequency  
should be higher than the ESR zero, but less than 1/5  
of the switching frequency. The second pole should be  
placed at half the switching frequency.  
(4)  
1
f
=
P(LC)  
2π ×  
L × C  
O O  
The next step of compensation design is to calculate  
the ESR zero. The ESR zero is contributed by the ESR  
associated with the output capacitance. Note that this  
requires that the output capacitor should have enough  
ESR to satisfy stability requirements. The ESR zero of  
the output capacitor is expressed as:  
1
(5)  
f
=
Z(ESR)  
2π × C × ESR  
O
2. Compensation Frequency Equations  
The compensation network consists of the error  
amplifier and the impedance networks ZC and Zf, as  
Figure 23 shows.  
Figure 24. Bode Plot  
Figure 23. Compensation Loop  
© 2007 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.1  
www.fairchildsemi.com  
10  
Layout Considerations  
Layout is important in high-frequency switching converter  
design. If designed improperly, PCB can radiate  
excessive noise and contribute to converter instability.  
(resistor divider), and compensation components  
(between INx and COMPx pins). Position those  
components close to their pins with a local, clear  
GND connection or directly to the ground plane.  
Place the PWM power stage components first. Mount  
all the power components and connections in the top  
layer with wide copper areas. The MOSFETs of buck,  
inductor, and output capacitor should be as close to  
each other as possible to reduce the radiation of EMI  
due to the high-frequency current loop. If the output  
capacitors are placed in parallel to reduce the ESR of  
capacitor, equal sharing ripple current should be  
considered. Place the input capacitor near the drain of  
high-side MOSFET. In multi-layer PCB, use one layer  
as power ground and have a separate control signal  
ground as the reference for all signals. To avoid the  
signal ground being affected by noise and have best  
load regulation, it should be connected to the ground  
terminal of output.  
7
8
Place the bootstrap capacitor near the BSTx and  
CLNx pins.  
The resistor on the RT pin should be near this pin  
and the GND return should be short and kept away  
from the noisy MOSFET’s GND (which is short  
together with IC’s PGND pin to GND plane on back  
side of PCB).  
9
Place the compensation components close to the  
INx and COMPx pins.  
10 The feedback resistors for both regulators should  
be located as close as possible to the relevant INx  
pin with vias tied straight to the ground plane as  
required.  
Follow the below guidelines for best performance:  
11 Minimize the length of the connections between the  
input capacitors, CIN, and the power switchers  
(MOSFETs) by placing them nearby.  
1
2
A two-layer printed circuit board is recommended.  
Use the bottom layer of the PCB as a ground plane  
and make all critical component ground  
connections through vias to this layer.  
12 Position both the ceramic and bulk input capacitors  
as close to the upper MOSFET drain as possible  
and make the GND returns (from the source of  
lower MOSFET to VIN capacitor GND) short.  
3
4
5
Keep the metal running from the CLNx terminal to  
the output inductor short.  
13 Position the output inductor and output capacitors  
between the upper MOSFET and lower MOSFET  
and the load.  
Use copper-filled polygons on the top (and bottom,  
if two-layer PCB) circuit layers for the CLN node.  
The small-signal wiring traces from the DLx and  
DHx pins to the MOSFET gates should be kept  
short and wide enough to easily handle the several  
amps of drive current.  
14 AGND should be on the clearer plane and kept  
away from the noisy MOSFET GND.  
15 PGND should be short, together with MOSFET  
GND, then through vias to GND plane on the  
bottom of PCB.  
6
The critical, small-signal components include any  
bypass capacitors (SMD-type of capacitors applied  
at VCC and SSx/ENB pins), feedback components  
© 2007 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.1  
www.fairchildsemi.com  
11  
Physical Dimensions  
E
H
Detail  
A
F
A
c
1
10  
b
e
D
θ
L
A2  
y
A1  
Detail  
A
Figure 25. 20-Lead Small Outline Package (SOP)  
Dimensions  
Millimeter  
Inch  
Typ.  
Symbol  
Min.  
Typ.  
Max.  
2.642  
0.305  
2.337  
Min.  
0.093  
0.004  
0.089  
Max.  
0.104  
0.012  
0.092  
A
A1  
A2  
b
2.362  
0.101  
2.260  
0.406  
0.203  
0.016  
0.008  
c
D
E
12.598  
7.391  
12.903  
7.595  
0.496  
0.291  
0.508  
0.299  
e
1.270  
0.050  
H
L
10.007  
0.406  
10.643  
1.270  
0.394  
0.016  
0.419  
0.050  
F
0.508X45°  
0.020X45°  
y
0.101  
0.004  
θ°  
0°  
8°  
0°  
8°  
© 2007 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.1  
www.fairchildsemi.com  
12  
Physical Dimensions (Continued)  
θ
D
11  
10  
20  
B
E1  
e
E
1
A2  
A
L
e
b1  
A1  
b
Figure 26. 20-Lead Dual In-line Package (DIP)  
Dimensions  
Millimeter  
Inch  
Typ.  
Symbol  
Min.  
Typ.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
5.334  
0.210  
0.381  
3.175  
0.015  
0.125  
3.302  
1.524  
0.457  
26.162  
7.620  
6.350  
2.540  
3.302  
9.017  
7°  
3.429  
0.130  
0.060  
0.018  
1.030  
0.300  
0.250  
0.100  
0.130  
0.355  
7°  
0.135  
b1  
D
24.892  
6.223  
26.924  
6.477  
0.980  
0.245  
1.060  
0.255  
E
E1  
e
L
2.921  
8.509  
0°  
3.810  
9.525  
15°  
0.115  
0.335  
0°  
0.150  
0.375  
15°  
eB  
θ°  
© 2007 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.1  
www.fairchildsemi.com  
13  
© 2007 Fairchild Semiconductor Corporation  
SG1577 • Rev. 1.0.1  
www.fairchildsemi.com  
14  

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SG15D

FAST RECOVERY RECTIFIERS
BL Galaxy Ele

SG15G

FAST RECOVERY RECTIFIERS
BL Galaxy Ele

SG15J

FAST RECOVERY RECTIFIERS
BL Galaxy Ele

SG15K

FAST RECOVERY RECTIFIERS
BL Galaxy Ele

SG15M

FAST RECOVERY RECTIFIERS
BL Galaxy Ele

SG15N12DP

绝缘栅双极型晶体管(IGBT)Isolated Gate Bipolar Transistor (IGBTs),IGBT分立器件Discrete IGBTs。
SIRECTIFIER

SG15N12DP

Discrete IGBTs
SIRECT