KSC5054R [FAIRCHILD]
Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, IPAK-3;型号: | KSC5054R |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, IPAK-3 开关 晶体管 |
文件: | 总5页 (文件大小:49K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KSC5054
High Speed High Voltage Switching
Industrial Use
1
I-PAK
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
500
V
V
CBO
CEO
EBO
400
7
V
I
I
I
0.25
A
B
Collector Current (DC)
*Collector Current (Pulse)
0.5
A
C
1
A
CP
P
Collector Dissipation (T =25°C)
1
10
W
W
°C
°C
C
a
P
T
T
Collector Dissipation (T =25°C)
C
C
Junction Temperature
Storage Temperature
150
J
- 55 ~ 150
STG
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
400
450
Max.
Units
V
V
(sus)
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
I
I
= 0.3A, I = 0.06A, L = 10mH
V
V
CEO
C
C
B1
(sus)1
= 0.3A, I = -I = 0.06A
B1 B2
CEX
V
(off) = -5V, L = 10mH
BE
V
(sus)2
Collector-Emitter Sustaining Voltage
I
= 0.6A, I = 0.2, L = 10mH
400
V
CEX
C
B1
I 2 = -0.06, V (off) = -5V
B
BE
I
I
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
V
= 400V, I = 0
10
1
µA
mA
µA
CBO
CER
EBO
CB
CE
EB
E
V
V
= 400V, R = 51Ω, T = 125°C
BE C
I
= 5V, I = 0
10
C
I
I
V
V
= 400V, V (off) = -1.5V
10
1
µA
mA
CEX1
CEX2
CE
BE
= 400V, V (off) = -1.5V @
CE
BE
T
= 125°C
C
h
h
DC Current Gain
V
V
= 5V, I = 0.05A
20
10
80
FE1
FE2
CE
CE
C
= 5V, I = 0.3A
C
V
V
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn ON Time
I
I
= 0.3A, I = 0.06A
1
1.2
1
V
V
CE
BE
C
C
B
(sat)
= 0.3A, I = 0.06A
B
t
t
t
V
= 150V, I = 0.3A
µs
µs
µs
ON
CC
C
I
= -I = 0.06A, R = 500Ω
Storage Time
B1
B2 L
2.5
1
STG
F
PW = 50µs, Duty Cycle≤2%
Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
Classification
FE
Classification
R
O
Y
h
20 ~ 40
30 ~ 60
40 ~ 80
FE1
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
1000
100
10
0.5
0.4
0.3
0.2
0.1
0.0
VCE = 5V
1
0.1
1
10
100
1000
0
1
2
3
4
5
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
IC = 5 IB1 = -5 IB2
IC = 5 IB
VBE(sat)
1
tstg
1
0.1
VCE(sat)
VCE(sat)
tf
ton
0.01
0.1
0.1
10
1
10
100
1000
100
1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Switching Time
10
1.0
0.8
0.6
0.4
0.2
0.0
IC(max). (Pulse)
1
DC
0.1
0.01
0.001
1
10
100
1000
0
100
200
300
400
500
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
Figure 6. Reverse Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics (Continued)
160
140
120
100
80
16
14
12
10
8
60
6
40
4
20
2
0
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
Tc[oC], CASE TEMPERATURE
Tc[oC], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Area
Figure 8. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Package Demensions
I-PAK
2.30 ±0.20
0.50 ±0.10
6.60 ±0.20
5.34 ±0.20
(0.50)
(4.34)
(0.50)
MAX0.96
0.76 ±0.10
0.50 ±0.10
2.30TYP
2.30TYP
[2.30±0.20]
[2.30±0.20]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
UltraFET®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
相关型号:
KSC5054YTU
Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, IPAK-3
FAIRCHILD
KSC5060
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
KSC5060
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
SAMSUNG
KSC5060-R
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
SAMSUNG
KSC5060J69Z
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
KSC5060O
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
KSC5060R
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
KSC5060RJ69Z
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
KSC5060Y
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
KSC5060YJ69Z
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
KSC5061
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
SAMSUNG
©2020 ICPDF网 联系我们和版权申明