KSC5054YTU [FAIRCHILD]

Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, IPAK-3;
KSC5054YTU
型号: KSC5054YTU
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, IPAK-3

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KSC5054  
High Speed High Voltage Switching  
Industrial Use  
1
I-PAK  
1. Base 2. Collector 3. Emitter  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Base Current  
500  
V
V
CBO  
CEO  
EBO  
400  
7
V
I
I
I
0.25  
A
B
Collector Current (DC)  
*Collector Current (Pulse)  
0.5  
A
C
1
A
CP  
P
Collector Dissipation (T =25°C)  
1
10  
W
W
°C  
°C  
C
a
P
T
T
Collector Dissipation (T =25°C)  
C
C
Junction Temperature  
150  
J
Storage Temperature  
- 55 ~ 150  
STG  
* PW300µs, Duty Cycle10%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
400  
450  
Max.  
Units  
V
V
(sus)  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Sustaining Voltage  
I
I
= 0.3A, I = 0.06A, L = 10mH  
V
V
CEO  
C
C
B1  
(sus)1  
= 0.3A, I = -I = 0.06A  
B1 B2  
CEX  
V
(off) = -5V, L = 10mH  
BE  
V
(sus)2  
Collector-Emitter Sustaining Voltage  
I
= 0.6A, I = 0.2, L = 10mH  
400  
V
CEX  
C
B1  
I 2 = -0.06, V (off) = -5V  
B
BE  
I
I
Collector Cut-off Current  
Collector Cut-off Current  
Emitter Cut-off Current  
Collector Cut-off Current  
V
= 400V, I = 0  
10  
1
µA  
mA  
µA  
CBO  
CER  
EBO  
CB  
CE  
EB  
E
V
V
= 400V, R = 51, T = 125°C  
BE C  
I
= 5V, I = 0  
10  
C
I
I
V
V
= 400V, V (off) = -1.5V  
10  
1
µA  
mA  
CEX1  
CEX2  
CE  
BE  
= 400V, V (off) = -1.5V @  
CE  
BE  
T
= 125°C  
C
h
h
DC Current Gain  
V
V
= 5V, I = 0.05A  
20  
10  
80  
FE1  
FE2  
CE  
CE  
C
= 5V, I = 0.3A  
C
V
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Turn ON Time  
I
I
= 0.3A, I = 0.06A  
1
1.2  
1
V
V
CE  
BE  
C
C
B
(sat)  
= 0.3A, I = 0.06A  
B
t
t
t
V
= 150V, I = 0.3A  
µs  
µs  
µs  
ON  
CC  
C
I
= -I = 0.06A, R = 500Ω  
Storage Time  
B1  
B2 L  
2.5  
1
STG  
F
PW = 50µs, Duty Cycle2%  
Fall Time  
* Pulse Test: PW350µs, Duty Cycle2% Pulsed  
h
Classification  
FE  
Classification  
R
O
Y
h
20 ~ 40  
30 ~ 60  
40 ~ 80  
FE1  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Typical Characteristics  
1000  
100  
10  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
VCE = 5V  
1
0.1  
1
10  
100  
1000  
0
1
2
3
4
5
IC[mA], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
10  
10  
IC = 5 IB1 = -5 IB2  
IC = 5 IB  
VBE(sat)  
1
tstg  
1
0.1  
VCE(sat)  
VCE(sat)  
tf  
ton  
0.01  
0.1  
0.1  
10  
1
10  
100  
1000  
100  
1000  
IC[mA], COLLECTOR CURRENT  
IC[mA], COLLECTOR CURRENT  
Figure 3. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Figure 4. Switching Time  
10  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
IC(max). (Pulse)  
1
DC  
0.1  
0.01  
0.001
1
10  
100  
1000  
0
100  
200  
300  
400  
500  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 5. Safe Operating Area  
Figure 6. Reverse Bias Safe Operating Area  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Typical Characteristics (Continued)  
160  
140  
120  
100  
80  
16  
14  
12  
10  
8
60  
6
40  
4
20  
2
0
0
0
25  
50  
75  
100  
125  
150  
175  
200  
0
25  
50  
75  
100  
125  
150  
175  
200  
Tc[oC], CASE TEMPERATURE  
Tc[oC], CASE TEMPERATURE  
Figure 7. Derating Curve of Safe Operating Area  
Figure 8. Power Derating  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Package Demensions  
I-PAK  
2.30 ±0.20  
0.50 ±0.10  
6.60 ±0.20  
5.34 ±0.20  
(0.50)  
(4.34)  
(0.50)  
MAX0.96  
0.76 ±0.10  
0.50 ±0.10  
2.30TYP  
2.30TYP  
[2.30±0.20]  
[2.30±0.20]  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
FAST®  
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PACMAN™  
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STAR*POWER™  
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Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
UHC™  
Power247™  
PowerTrench®  
QFET™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
SMART START™  
UltraFET®  
VCX™  
FACT™  
FACT Quiet Series™  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H3  
Product Folder - Fairchild P/N KSC5054 - NPN Epitaxial Silicon Transistor  
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KSC5054OTU  
KSC5054YTU  
KSC5054RTU  
Product status  
Full Production  
Full Production  
Full Production  
Pricing*  
Package type  
$0.295 TO-251(IPAK)  
$0.295 TO-251(IPAK)  
$0.295 TO-251(IPAK)  
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RAIL  
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