KSC4468OTU [FAIRCHILD]
Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN;型号: | KSC4468OTU |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN 局域网 放大器 晶体管 |
文件: | 总6页 (文件大小:81K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KSC4468
Audio Power Amplifier
•
•
•
•
High Current Capability : I =8A
High Power Dissipation
Wide S.O.A
C
Complement to KSA1695
TO-3P
1.Base 2.Collector 3.Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
160
V
V
CBO
140
CEO
EBO
6
V
I
I
8
16
A
C
A
CP
P
Collector Dissipation (T =25°C)
80
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 55 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
BV
Collector-Base Breakdown Voltage
I =5mA, I =0
160
140
6
CBO
CEO
EBO
C
E
BV
BV
Collector-Emitter Breakdown Voltage I =10mA, R =∞
V
C
BE
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
I =5mA, I =0
V
E
C
I
I
V
=80V, I =0
0.1
0.1
mA
mA
CBO
EBO
CB
EB
E
V
=4V, I =0
C
h
h
V
V
=5V, I =1A
60
20
200
FE1
FE2
CE
CE
C
=5V, I =6A
C
V
V
(sat)
(on)
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
I =5A, I =0.5A
2.5
1.5
V
V
CE
C
B
V
=5V, I =1A
C
BE
CE
CE
CB
CC
f
V
V
V
=5V, I =1A
30
MHz
pF
µs
T
C
C
=10V, f=1MHz
=20V,
210
0.26
0.68
6.68
ob
ON
F
t
t
t
I =1A=10I =-10I
Fall Time
C
B1
B2
µs
R =20Ω
L
Storage Time
µs
STG
* Pulse Test : PW=20µs
h
Classification
FE
Classification
O
Y
h
60 ~ 120
100 ~ 200
FE1
©2001 Fairchild Semiconductor Corporation
Rev. B1, Septmeber 2001
Typical Characteristics
18
1000
100
10
IB = 400mA
VCE = 5V
16
IB = 350mA
IB = 300mA
14
IB = 250mA
IB = 200mA
12
10
8
IB = 150mA
IB = 100mA
IB = 50mA
6
4
2
IB = 0
1
0.01
0
0.1
1
10
100
0
1
2
3
4
5
6
7
8
9
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterstic
Figure 2. DC current Gain
10
10
IC = 10 IB
IC = 10 IB
1
1
0.1
0.1
0.01
0.01
0.01
0.01
0.1
1
10
100
0.1
1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
100
12
VCE = 5V
IC MAX. (Pulse)
10
8
10
IC MAX. (DC)
1
6
4
0.1
2
*SINGLE NONREPETITIVE
PULSE TC=25[oC]
0.01
0
0.0
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VBE[V], BASE-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. B1, Septmeber 2001
Typical Characteristics (Continued)
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. B1, Septmeber 2001
Package Demensions
TO-3P
15.60 ±0.20
4.80 ±0.20
13.60 ±0.20
9.60 ±0.20
+0.15
ø3.20 ±0.10
1.50
–0.05
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
1.40 ±0.20
+0.15
–0.05
0.60
5.45TYP
5.45TYP
[5.45 ±0.30
]
[5.45 ±0.30]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. B1, Septmeber 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
FAST®
FASTr™
FRFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
SMART START™
STAR*POWER™
Stealth™
VCX™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
POP™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
FACT™
FACT Quiet Series™
UHC™
UltraFET®
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4
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High Current Capability: I =8A
C
Quality and reliability
●
●
●
High Power Dissipation
Wide S.O.A.
Complement to KSA1695
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Product
KSC4468OTU
KSC4468YTU
Product status
Pricing*
Package type
TO-3P
Leads
Packing method
RAIL
Lifetime Buy
Lifetime Buy
$0.96
$0.96
3
3
TO-3P
RAIL
* 1,000 piece Budgetary Pricing
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© Copyright 2002 Fairchild Semiconductor
相关型号:
KSC4468YTU
Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
FAIRCHILD
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