KSC4468YTU [FAIRCHILD]

Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN;
KSC4468YTU
型号: KSC4468YTU
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Power Bipolar Transistor, 8A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN

局域网 放大器 晶体管
文件: 总6页 (文件大小:81K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KSC4468  
Audio Power Amplifier  
High Current Capability : I =8A  
High Power Dissipation  
Wide S.O.A  
C
Complement to KSA1695  
TO-3P  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
160  
V
V
CBO  
140  
CEO  
EBO  
6
V
I
I
8
16  
A
C
A
CP  
P
Collector Dissipation (T =25°C)  
80  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
BV  
Collector-Base Breakdown Voltage  
I =5mA, I =0  
160  
140  
6
CBO  
CEO  
EBO  
C
E
BV  
BV  
Collector-Emitter Breakdown Voltage I =10mA, R =∞  
V
C
BE  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
* DC Current Gain  
I =5mA, I =0  
V
E
C
I
I
V
=80V, I =0  
0.1  
0.1  
mA  
mA  
CBO  
EBO  
CB  
EB  
E
V
=4V, I =0  
C
h
h
V
V
=5V, I =1A  
60  
20  
200  
FE1  
FE2  
CE  
CE  
C
=5V, I =6A  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
Turn ON Time  
I =5A, I =0.5A  
2.5  
1.5  
V
V
CE  
C
B
V
=5V, I =1A  
C
BE  
CE  
CE  
CB  
CC  
f
V
V
V
=5V, I =1A  
30  
MHz  
pF  
µs  
T
C
C
=10V, f=1MHz  
=20V,  
210  
0.26  
0.68  
6.68  
ob  
ON  
F
t
t
t
I =1A=10I =-10I  
Fall Time  
C
B1  
B2  
µs  
R =20Ω  
L
Storage Time  
µs  
STG  
* Pulse Test : PW=20µs  
h
Classification  
FE  
Classification  
O
Y
h
60 ~ 120  
100 ~ 200  
FE1  
©2001 Fairchild Semiconductor Corporation  
Rev. B1, Septmeber 2001  
Typical Characteristics  
18  
1000  
100  
10  
IB = 400mA  
VCE = 5V  
16  
IB = 350mA  
IB = 300mA  
14  
IB = 250mA  
IB = 200mA  
12  
10  
8
IB = 150mA  
IB = 100mA  
IB = 50mA  
6
4
2
IB = 0  
1
0.01  
0
0.1  
1
10  
100  
0
1
2
3
4
5
6
7
8
9
10  
IC[A], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characterstic  
Figure 2. DC current Gain  
10  
10  
IC = 10 IB  
IC = 10 IB  
1
1
0.1  
0.1  
0.01  
0.01  
0.01  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
IC[A], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 3. Collector-Emitter Saturation Voltage  
Figure 4. Base-Emitter Saturation Voltage  
100  
12  
VCE = 5V  
IC MAX. (Pulse)  
10  
8
10  
IC MAX. (DC)  
1
6
4
0.1  
2
*SINGLE NONREPETITIVE  
PULSE TC=25[oC]  
0.01  
0
0.0  
0.1  
1
10  
100  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
VBE[V], BASE-EMITTER VOLTAGE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 5. Base-Emitter On Voltage  
Figure 6. Safe Operating Area  
©2001 Fairchild Semiconductor Corporation  
Rev. B1, Septmeber 2001  
Typical Characteristics (Continued)  
140  
120  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
TC[oC], CASE TEMPERATURE  
Figure 7. Power Derating  
©2001 Fairchild Semiconductor Corporation  
Rev. B1, Septmeber 2001  
Package Demensions  
TO-3P  
15.60 ±0.20  
4.80 ±0.20  
13.60 ±0.20  
9.60 ±0.20  
+0.15  
ø3.20 ±0.10  
1.50  
–0.05  
2.00 ±0.20  
3.00 ±0.20  
1.00 ±0.20  
1.40 ±0.20  
+0.15  
–0.05  
0.60  
5.45TYP  
5.45TYP  
[5.45 ±0.30  
]
[5.45 ±0.30]  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. B1, Septmeber 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
ACEx™  
Bottomless™  
CoolFET™  
FAST®  
FASTr™  
FRFET™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
SMART START™  
STAR*POWER™  
Stealth™  
VCX™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
GlobalOptoisolator™  
GTO™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MicroPak™  
MICROWIRE™  
POP™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
Power247™  
PowerTrench®  
QFET™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
FACT™  
FACT Quiet Series™  
UHC™  
UltraFET®  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H4  
Product Folder - Fairchild P/N KSC4468 - NPN Epitaxial Silicon Transistor  
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High Current Capability: I =8A  
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Wide S.O.A.  
Complement to KSA1695  
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Audio Power Amplifier  
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Product  
KSC4468OTU  
KSC4468YTU  
Product status  
Pricing*  
Package type  
TO-3P  
Leads  
Packing method  
RAIL  
Lifetime Buy  
Lifetime Buy  
$0.96  
$0.96  
3
3
TO-3P  
RAIL  
* 1,000 piece Budgetary Pricing  
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