KA1M0365 [FAIRCHILD]
Fairchild Power Switch(FPS); 飞兆功率开关（ FPS ）
| 型号： | KA1M0365 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Fairchild Power Switch(FPS) |
| 文件： | 总10页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
www.fairchildsemi.com
KA1L0365R/KA1M0365R/KA1H0365R
Fairchild Power Switch(FPS)
Features
Description
• Precision Fixed Operating Frequency
• KA1L0365R(50kHz), KA1M0365R(67kHz),
KA1H0365R(100kHz)
• Pulse by Pulse Over Current Limiting
• Over Load Protection
• Over Voltage Protection (Min. 23V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto Restart
The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM
controller IC. PWM controller features integrated fixed
oscillator, under voltage lock out, leading edge blanking,
optimized gate turn-on/turn-off driver, thermal shut down
protection, over voltage protection, temperature compensated
precision current sources for loop compensation and fault
protection circuit. compared to discrete MOSFET and
controller or R
switching converter solution, a Fairchild
CC
Power Switch(FPS) can reduce total component count,
design size, weight and at the same time increase &
efficiency, productivity, and system reliability. It has a basic
platform well suited for cost effective design in either a
flyback converter or a forward converter.
TO-220F-4L
1
1. GND 2. DRAIN 3. V
4. FB
CC
Internal Block Diagram
#3 V
CC
#2 DRAIN
32V
5V
Vref
Internal
bias
SFET
Good
logic
OSC
9V
S
R
Q
5µA
1mA
−
#4 FB
L.E.B
0.1V
2.5R
1R
+
+
S
Q
R
#1 GND
−
7.5V
25V
Thermal S/D
OVER VOLTAGE S/D
+
Power on reset
−
Rev.1.0.2
©2003 Fairchild Semiconductor Corporation
KA1L0365R/KA1M0365R/KA1H0365R
Absolute Maximum Ratings
Parameter
Maximum Drain Voltage (1)
Symbol
Value
650
650
±30
12
Unit
V
V
D,MAX
Drain-Gate Voltage (R =1MΩ)
V
DGR
V
GS
Gate-Source (GND) Voltage
Drain Current Pulsed (2)
V
V
GS
I
A
DM
DC
Single Pulsed Avalanche Energy (3)
E
358
3.0
mJ
AS
Continuous Drain Current (T =25°C)
I
A
DC
A
DC
V
C
D
D
Continuous Drain Current (T =100°C)
I
2.4
C
Maximum Supply Voltage
Input Voltage Range
V
30
CC,MAX
V
-0.3 to V
75
V
FB
SD
P
W
W/°C
°C
D
Total Power Dissipation
Darting
0.6
Operating Ambient Temperature
Storage Temperature
Notes:
T
-25 to +85
A
T
STG
-55 to +150
°C
1. T = 25°C to 150°C
j
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 41mH, V
= 50V, R = 25Ω, starting T = 25°C
G j
DD
2
KA1L0365R/KA1M0365R/KA1H0365R
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
BV
Condition
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
V
=0V, I =50µA
650
-
-
V
DSS
GS
D
V
V
=Max., Rating,
=0V
DS
GS
-
-
50
µA
Zero Gate Voltage Drain Current
I
DSS
V
V
=0.8Max., Rating,
DS
-
-
200
µA
=0V, T =125°C
GS
C
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
R
V
V
=10V, I =1.5A
D
-
3.6
-
4.5
Ω
DS(ON)
GS
DS
gfs
=50V, I =1.5A
D
2.0
-
-
-
-
-
-
-
-
S
Ciss
-
-
-
-
-
-
-
720
40
V
=0V, V =25V,
DS
GS
Output Capacitance
Coss
Crss
pF
nS
f=1MHz
Reverse Transfer Capacitance
Turn on Delay Time
40
t
V
=0.5BV
, I =3.0A
DSS
150
100
150
42
d(on)
DD
D
(MOSFET switching
time are essentially
independent of
Rise Time
tr
Turn Off Delay Time
t
d(off)
Fall Time
tf
operating temperature)
Total Gate Charge
(Gate-Source+Gate-Drain)
V
V
=10V, I =3.0A,
D
GS
DS
Qg
-
-
34
=0.5BV
(MOSFET
DSS
switching time are
essentially independent of
operating temperature)
nC
Gate-Source Charge
Qgs
Qgd
-
-
7.3
-
-
Gate-Drain (Miller) Charge
13.3
Note:
1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
1
2. S = ---
R
3
KA1L0365R/KA1M0365R/KA1H0365R
Electrical Characteristics (Control Part) (Continued)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage
Stop Threshold Voltage
OSCILLATOR SECTION
V
-
14
9
15
10
16
11
V
V
START
V
After turn on
STOP
KA1L0365R
KA1M0365R
KA1H0365R
-25°C ≤ Ta ≤ +85°C
KA1L0365R
KA1M0365R
KA1H0365R
45
61
90
-
50
67
55
73
Initial Accuracy
F
kHz
%
OSC
100
±5
110
±10
80
Frequency Change With Temperature (2)
Maximum Duty Cycle
∆F/∆T
74
74
64
77
Dmax
77
80
%
67
70
FEEDBACK SECTION
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
REFERENCE SECTION
Output Voltage (1)
I
Ta=25°C, 0V ≤ Vfb ≤ 3V
0.7
6.9
4.0
0.9
7.5
5.0
1.1
8.1
6.0
mA
V
FB
V
-
SD
Idelay
Ta=25°C, 5V ≤ Vfb ≤ V
µA
SD
Vref
Ta=25°C
4.80 5.00 5.20
0.3
V
Temperature Stability (1)(2)
Vref/∆T -25°C ≤ Ta ≤ +85°C
-
0.6 mV/°C
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit
I
Max. inductor current
1.89 2.15 2.41
A
OVER
PROTECTION SECTION
Thermal Shutdown Temperature (Tj) (1)
Over Voltage Protection Voltage
TOTAL DEVICE SECTION
Start-Up Current
T
-
-
140 160
-
°C
SD
V
23
25
28
V
OVP
I
V
=14V
CC
0.1
6
0.3
12
0.4
18
35
mA
mA
V
START
Operating Supply Current
(Control Part Only)
I
Ta=25°C
=20mA
OP
V
Zener Voltage
V
I
CC
30
32.5
CC
Z
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4
KA1L0365R/KA1M0365R/KA1H0365R
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta=25°C)
1.2
1.15
1.1
1.2
1.15
1.1
1.05
1.05
I
FB
1
Fosc
1
0.95
0.95
0.9
0.9
0.85
0.8
0.85
0.8
-25
0
25
50
75 100 125 150
- 25
0
25 50 75 100 125 150
Temperature [°
C
]
Temperature [°C]
Figure 1. Operating Frequency
Figure 2. Feedback Source Current
1.1
1.05
over
1.2
1.15
1.1
1.05
I
1
l
OP
0.95
0.9
1
0.95
0.9
0.85
0.8
0.85
0.8
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°
Temperature [°
C]
C]
Figure 3. Operating Supply Current
Figure 4. Peak Current Limit
1.5
1.15
1.1
1.3
1.1
0.9
0.7
0.5
1.05
I
V
th(H)
ST
Istart
1
0.95
0.9
0.85
-25
0
25 50 75 100 125 150
Temperature [°
-25
0
25 50 75 100 125 150
Temperature [°
C]
C]
Figure 5. Start up Current
Figure 6. Start Threshold Voltage
5
KA1L0365R/KA1M0365R/KA1H0365R
Typical Performance Characteristics(Continued)
(These characteristic graphs are normalized at Ta=25°C)
1.15
1.15
1.1
1.1
1.05
1.05
V
th(L)
1
Dmax
1
0.95
0.9
0.95
0.9
0.85
0.85
-25
0
25 50 75 100 125 150
Temperature [°
-25
0
25 50 75 100 125 150
Temperature [°
C
]
C]
Figure 7. Stop Threshold Voltage
Figure 8. Maximum Duty Cycle
1.15
1.1
1.2
1.15
1.1
1.05
1.05
Vs d
1
0.95
0.9
Vz
1
0.95
0.9
0.85
0.8
0.85
-25
0
25
50
75 100 125 150
-25
0
25
50
75 100 125 150
Temperature [°
C
]
Temperature [°C]
Figure 9. V
Zener Voltage
Figure 10. Shutdown Feedback Voltage
CC
1.15
1.2
1.15
1.1
1.05
1.1
1.05
Idelay
1
Vovp
1
0.95
0.9
0.95
0.9
0.85
0.8
0.85
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°
C
]
Temperature [°C]
Figure 11. Shutdown Delay Current
Figure 12. Over Voltage Protection
6
KA1L0365R/KA1M0365R/KA1H0365R
Typical Performance Characteristics (Continued)
(These characteristic groups are normalized at Ta=25°C)
2.5
2
1.5
(
)
1
Rdson
0.5
0
-25
0
25 50 75 100 125 150
Temperature [°C]
Figure 13. Static Drain-Source on Resistance
7
KA1L0365R/KA1M0365R/KA1H0365R
Package Dimensions
TO-220F-4L
8
KA1L0365R/KA1M0365R/KA1H0365R
Package Dimensions (Continued)
TO-220F-4L(Forming)
9
KA1L0365R/KA1M0365R/KA1H0365R
Ordering Information
Product Number
Package
Rating
Fosc
KA1L0365R-TU
TO-220F-4L
650V, 3A
50kHz
KA1L0365R-YDTU
TO-220F-4L(Forming)
KA1M0365R-TU
TO-220F-4L
650V, 3A
650V, 3A
67kHz
KA1M0365R-YDTU
TO-220F-4L(Forming)
KA1H0365R-TU
TO-220F-4L
100kHz
KA1H0365R-YDTU
TO-220F-4L(Forming)
TU : Non Forming Type
YDTU : Forming Type
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
8/25/03 0.0m 001
Stock#DSxxxxxxxx
2003 Fairchild Semiconductor Corporation
相关型号：
©2020 ICPDF网 联系我们和版权申明