KA1M0380RB [FAIRCHILD]
Fairchild Power Switch(SPS); 飞兆功率开关（ SPS ）
| 型号： | KA1M0380RB |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Fairchild Power Switch(SPS) |
| 文件： | 总12页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
www.fairchildsemi.com
KA1L0380B/KA1L0380RB/KA1M0380RB/
KA1H0380RB
Fairchild Power Switch(SPS)
Features
Description
• Precision fixed operating frequency
The SPS product family is specially designed for an off-line
SMPS with minimal external components. The SPS consist of
high voltage power SenseFET and current mode PWM control-
ler IC. PWM controller features integrated fixed oscillator,
under voltage lock out, leading edge blanking, optimized gate
turn-on/turn-off driver, thermal shut down protection, over volt-
age protection, temperature compensated precision current
sources for loop compensation and fault protection circuit.
Compared to discrete MOSFET and controller or RCC switch-
ing converter solution, a SPS can reduce total component count,
design size, weight and at the same time increase & efficiency,
productivity, and system reliability. It has a basic platform well
suited for cost effective design in either a flyback converter or a
forward converter.
•
•
•
KA1L0380B/KA1L0380RB (50KHz)
KA1M0380RB (67KHz)
KA1H0380RB (100KHz)
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protection (Min. 23V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• Auto restart (KA1L0380RB/KA1M0380RB/KA1H0380RB)
TO-220F-4L
1
1. GND 2. DRAIN 3. V
CC
4. FB
Internal Block Diagram
#3 V
CC
#2 DRAIN
32V
5V
Vref
Internal
bias
SFET
Good
logic
OSC
9V
S
R
Q
5µA
1mA
−
#4 FB
L.E.B
0.1V
2.5R
1R
+
+
S
R
#1 GND
−
7.5V
25V
Q
Thermal S/D
OVER VOLTAGE S/D
+
Power on reset
−
Rev. .5.0
©2000 Fairchild Semiconductor International
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Absolute Maximum Ratings
Parameter
Drain-source (GND) voltage (1)
Symbol
Value
800
800
±30
12
Unit
V
V
DSS
Drain-Gate voltage (R =1MΩ)
V
DGR
V
GS
Gate-source (GND) voltage
Drain current pulsed (2)
V
V
GS
DM
I
A
DC
Single pulsed avalanche energy (3)
Avalanche current(4)
E
I
95
mJ
A
AS
6
AS
Continuous drain current (T =25°C)
I
I
3.0
A
C
D
D
DC
DC
V
Continuous drain current (T =100°C)
2.1
A
C
Supply voltage
V
30
CC
Analog input voltage range
V
−0.3 to V
35
V
FB
SD
P
W
W/°C
°C
D
Total power dissipation
Derating
0.28
Operating temperature
Storage temperature
T
OPR
−25 to +85
T
STG
−55 to +150
°C
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=51mH, V =50V, R =25Ω, starting Tj=25°C
DD
G
4. L=13µH, starting Tj=25°C
2
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
BV
Condition
Min.
Typ. Max. Unit
Drain-source breakdown voltage
V
=0V, I =50µA
800
-
-
V
DSS
GS
D
V
V
=Max., Rating,
=0V
DS
GS
-
-
-
50
µA
Zero gate voltage drain current
I
DSS
V
V
=0.8Max., Rating,
DS
-
200
µA
=0V, T =125°C
GS
C
Static drain-source on resistance (Note)
Forward transconductance (Note)
Input capacitance
R
V
V
=10V, I =1.5A
D
-
4.0
2.5
779
75.6
24.9
40
5.0
Ω
DS(ON)
gfs
GS
DS
=15V, I =1.5A
D
1.5
-
-
-
-
-
-
-
-
S
Ciss
-
-
-
-
-
-
-
V
=0V, V =25V,
DS
GS
Output capacitance
Reverse transfer capacitance
Turn on delay time
Coss
Crss
pF
nS
f=1MHz
td(on)
tr
V
=0.5BV
, I =3.0A
DSS
DD
D
(MOSFET switching
time are essentially
independent of
Rise time
95
Turn off delay time
td(off)
tf
150
60
Fall time
operating temperature)
Total gate charge
(gate-source+gate-drain)
V
V
=10V, I =3.0A,
D
GS
DS
Qg
-
-
34
=0.5BV
(MOSFET
DSS
switching time are
essentially independent of
operating temperature)
nC
Gate-source charge
Qgs
Qgd
-
-
7.2
-
-
Gate-drain (Miller) charge
12.1
Note:
Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
1
S = ---
R
3
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Electrical Characteristics (CONTROL part)
(Ta=25°C unless otherwise specified)
Parameter
REFERENCE SECTION
Output voltage (1)
Symbol
Condition
Min.
Typ. Max.
Unit
Vref
Ta=25°C
4.80
-
5.00
0.3
5.20
0.6
V
Temperature Stability (1)(2)
Vref/∆T
−25°C≤Ta≤+85°C
mV/°C
OSCILLATOR SECTION
KA1L0380B
45
45
61
90
-
50
50
55
55
KA1L0380RB
KA1M0380RB
KA1H0380RB
−25°C≤Ta≤+85°C
Initial accuracy
F
kHz
%
OSC
67
73
100
±5
110
±10
Frequency change with temperature (2)
∆F/∆T
PWM SECTION
KA1L0380B
74
74
74
64
77
77
77
67
80
80
80
70
KA1L0380RB
KA1M0380RB
KA1H0380RB
Maximum duty cycle
Dmax
%
FEEDBACK SECTION
Feedback source current
Shutdown delay current
I
Ta=25°C, 0V≤Vfb≤3V
0.7
4.0
0.9
5.0
1.1
6.0
mA
FB
Idelay
Ta=25°C, 5V≤Vfb≤V
SD
µA
OVER CURRENT PROTECTION SECTION
Over current protection
UVLO SECTION
I
Max. inductor current
1.89
2.15
2.41
A
L(max)
Start threshold voltage
Minimum operating voltage
TOTAL STANDBY CURRENT SECTION
Start current
Vth(H)
Vth(L)
-
14
9
15
10
16
11
V
V
After turn on
I
V
=14V
CC
0.1
6
0.3
12
0.45
18
mA
mA
V
ST
Operating supply current
(control part only)
I
Ta=25°C
OPR
V
zener voltage
V
I
=20mA
CC
30
32.5
35
CC
Z
SHUTDOWN SECTION
Shutdown Feedback voltage
Thermal shutdown temperature (Tj) (1)
Over voltage protection voltage
V
-
-
-
6.9
140
23
7.5
160
25
8.1
-
V
°C
V
SD
T
SD
V
28
OVP
Notes:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta=25°C)
1.2
1.15
1.1
1.2
1.15
1.1
1.05
1.05
Ifb
1
0.95
0.9
Fosc
1
0.95
0.9
0.85
0.8
0.85
0.8
-25
0
25
50
75 100 125 150
- 25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 1. Operating Frequency
Figure 2. Feedback Source Current
1.1
1.05
1.2
1.15
1.1
I
L(MAX)
1
0.95
0.9
1.05
I
OPR
1
0.95
0.9
0.85
0.8
0.85
0.8
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 3. Operating Current
Figure 4. Max. Inductor Current
1.5
1.15
1.1
1.3
1.1
0.9
0.7
0.5
1.05
I
V
th(H)
ST
a
1
0.95
0.9
0.85
-25
0
25 50 75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 5. Start up Current
Figure 6. Start Threshold Voltage
5
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta=25°C)
1.15
1.15
1.1
1.1
1.05
1.05
V
th(L)
1
Dmax 1
0.95
0.95
0.9
0.9
0.85
0.85
-25
0
25 50 75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 7. Stop Threshold Voltage
Figure 8. Maximum Duty Cycle
1.2
1.15
1.15
1.1
1.05
1
0.95
0.9
1.1
1.05
Vsd
1
0.95
0.9
Vz
0.85
0.8
0.85
-25
0
25
50
75 100 125 150
-25
0
25
50
75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 9. V
Zener Voltage
Figure 10. Shutdown Feedback Voltage
CC
1.15
1.2
1.15
1.1
1.1
1.05
1.05
Idelay
1
Vovp
1
0.95
0.9
0.85
0.8
0.95
0.9
0.85
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 11. Shutdown Delay Current
Figure 12. Over Voltage Protection
6
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Typical Performance Characteristics (Continued)
(These characteristic grahps are normalized at Ta=25°C)
2.5
2
1.5
Rdson
1
0.5
0
-25
0
25 50 75 100 125 150
Temperature [°C]
Figure 13. Drain Source Turn-on Resistance
7
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Package Dimensions
TO-220F-4L
8
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Package Dimensions (Continued)
TO-220F-4L (Forming)
9
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Ordering Information
Product Number
KA1L0380B-TU
Package
TO-220F-4L
Rating
Fosc
800V, 3A
50kHz
KA1L0380B-YDTU
TO-220F-4L(Forming)
KA1L0380RB-TU
TO-220F-4L
800V, 3A
800V, 3A
800V, 3A
50kHz
67kHz
100kHz
KA1L0380RB-YDTU
TO-220F-4L(Forming)
KA1M0380RB-TU
TO-220F-4L
KA1M0380RB-YDTU
TO-220F-4L(Forming)
KA1H0380RB-TU
TO-220F-4L
KA1H0380RB-YDTU
TO-220F-4L(Forming)
TU : Non Forming Type
YDTU : Forming Type
10
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
11
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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