IRF320-323 [FAIRCHILD]

N-Channel Power MOSFETs, 3.0 A, 350-400 V; N沟道功率MOSFET , 3.0 A, 350-400 V
IRF320-323
型号: IRF320-323
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

N-Channel Power MOSFETs, 3.0 A, 350-400 V
N沟道功率MOSFET , 3.0 A, 350-400 V

文件: 总5页 (文件大小:169K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IRF3202SPBF

HEXFET Power MOSFET
INFINEON

IRF3205

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
INFINEON

IRF3205

Advanced Process Technology Ultra Low On-Resistance
KERSEMI

IRF3205

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating
TYSEMI

IRF3205L

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
INFINEON

IRF3205LPBF

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
INFINEON

IRF3205PBF

HEXFET Power MOSFET
INFINEON

IRF3205S

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
INFINEON

IRF3205SPBF

HEXFET㈢ Power MOSFET
INFINEON

IRF3205STRL

TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 110A I(D) | TO-263AB
ETC

IRF3205STRLPBF

Advanced Process Technology
INFINEON

IRF3205STRR

TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 110A I(D) | TO-263AB
ETC