IRF3205 [TYSEMI]
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating; 先进的工艺技术超低导通电阻动态的dv / dt额定值
| 型号： | IRF3205 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating |
| 文件： | 总4页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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MOSFICET
Product specification
IRF3205
TO-220
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(0.70)
■ Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● Fast Switching
(1.00x45°)
MAX1.47
0.80 ±0.10
● Fully Avalanche Rated
1 2
3
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
1. GATE
9.40 ±0.20
2.DRAIN
3. SOURCE
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Continuous Drain Current, VGS @ 10V,TC = 25℃
Continuous Drain Current, VGS @ 10V,TC = 100℃
Pulsed Drain Current*1
Symbol
ID
Rating
110
Unit
A
ID
80
IDM
PD
390
Power Dissipation
200
W
W/℃
V
Linear Derating Factor
1.3
Linear Derating Factor
VGS
IAR
± 20
62
Avalanche Current *1
A
Repetitive Avalanche Energy *1
Peak Diode Recovery dv/dt *2
Junction-to-Case
EAR
20
mJ
V/ns
dv/dt
RθJC
RθCS
RθJA
TJ.TSTG
5
0.75 (Max)
0.5
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
℃/W
62 (Max)
-55 to + 175
Operating Junction and Storage Temperature Range
℃
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD ≤ 62A, di/dt ≤ 207A/µs, VDD ≤ V(BR)DSS,TJ ≤ 175℃
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Product specification
IRF3205
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
VDSS
Testconditons
VGS = 0V, ID = 250µA
Min
55
Typ Max
Unit
V
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
RDS(on)
VGS(th)
VGS = 10V, ID = 62A*1
VDS = VGS, ID = 250µA
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150℃
VGS = 20V
8.0
4.0
mΩ
V
2.0
25
Drain-to-Source Leakage Current
IDSS
IGSS
µA
250
100
-100
146
35
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
VGS = -20V
Qg
Qgs
Qgd
td(on)
tr
ID = 62A
nC
ns
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
VDS = 44V
VGS = 10V,*1
54
VDD = 28V
14
ID = 62A
101
50
Turn-Off Delay Time
Fall Time
td(off)
tf
RG = 4.5Ω
VGS=10V *1
65
Internal Drain Inductance
Internal Source Inductance
LD
LS
4.5
7.5
nH
pF
Input Capacitance
Ciss
Coss
Crss
trr
VGS = 0V
3247
781
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
ƒ = 1.0MHz
211
69
104
215
ns
TJ = 25℃, IF = 62A
di/dt = 100A/µs*1
Qrr
143
nC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
IS
110
Continuous Source Current（Body Diode)
Pulsed Source Current （Body Diode) *2
A
ISM
390
1.3
Diode Forward Voltage
VSD
V
TJ = 25℃, IS = 62A, VGS = 0V*1
*1 Pulse width ≤ 400µs; duty cycle ≤ 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
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Product specification
IRF3205
1000
100
10
1000
TOP
VGS
15V
VGS
15V
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
BOTTOM4.5V
100
10
1
4.5V
4.5V
20µs PULSE WIDTH
°
20µs PULSE WIDTH
°
T
J
= 25 C
10
T
J
= 175 C
10
1
0.1
0.1
1
100
1
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
1000
107A
=
I
D
°
T
= 25
C
J
2.0
1.5
1.0
0.5
0.0
°
= 175 C
T
J
100
10
1
V
= 25V
DS
20µs PULSE WIDTH
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
4
6
8
10 12
T , Junction Temperature( C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
6000
5000
4000
3000
2000
1000
0
16
I
D
= 62A
V
C
= 0V, f = 1 MHZ
= C + C , C
GS
SHORTED
gd ds
V
V
V
= 44V
= 27V
= 11V
DS
DS
DS
iss
gs
14
12
10
8
C
C
= C
rss
oss
gd
= C + C
ds
gd
Ciss
6
Coss
Crss
4
2
0
0
20
40
60
80
100
120
1
10
100
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
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Product specification
IRF3205
1000
10000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
100
10
1
10us
100us
°
T = 25 C
J
1ms
10ms
°
= 25 C
°
= 175 C
Single Pulse
T
C
T
J
V
= 0 V
GS
1
0.1
0.2
1
10
100
1000
0.8
1.4
2.0
2.6
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
500
I
120
D
TOP
25A
44A
LIMITED BY PACKAGE
400
300
200
100
0
BOTTOM 62A
100
80
60
40
20
0
A
25
50
75
100
125
150
175
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
°
, Case Temperature ( C)
T
C
Fig 12c. Maximum Avalanche Energy
Fig 9. Maximum Drain Current Vs.
Vs. Drain Current
Case Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
P
2
DM
t
SINGLE PULSE
(THERMAL RESPONSE)
1
0.02
0.01
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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INFINEON
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