HUF75344A3 [FAIRCHILD]
N-Channel UltraFET Power MOSFET 55V, 75A, 8mヘ; N沟道UltraFET功率MOSFET 55V ， 75A ，8Mヘ
| 型号： | HUF75344A3 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel UltraFET Power MOSFET 55V, 75A, 8mヘ |
| 文件： | 总8页 (文件大小：430K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2007
HUF75344A3
tm
N-Channel UltraFET Power MOSFET
55V, 75A, 8mΩ
Features
Description
•
RDS(on) = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A
•
This N-channel power MOSFET is produced using Fairchild
Semiconductor’s innovative UItraFET process. This advanced
process technology achieves the lowest possible
on-resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very low
reverse recovery time and stored change. It was designed for
use in applications where power efficiency is important, such
as switching regulators, switching converters, motro drives,
relay drivers, low-voltage bus switches, and power manage-
ment in portable and battery-operated products.
•
RoHS compliant
D
G
TO-3PN
G D S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Ratings
55
Units
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
±20
V
-Continuous (TC = 130oC)
- Pulsed
75
A
IDM
EAS
Drain Current
300
A
Single Pulsed Avalanche Energy
(Note 1)
1153
mJ
W
W/oC
oC
(TC = 25oC)
- Derate above 25oC
288.5
1.92
PD
Power Dissipation
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.52
Units
RθJC
RθJA
oC/W
40
©2007 Fairchild Semiconductor Corporation
HUF75344A3 Rev. A1
1
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Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
HUF75344A3
HUF75344A3
TO-3PN
-
-
30
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V, TJ = 25oC
55
-
-
-
-
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250µA, Referenced to 25oC
0.07
V/oC
V
DS = 50V, VGS = 0V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
µA
VDS = 45V, VGS = 0V, TJ = 150oC
250
±100
VGS = ±20V, VDS = 0V
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain to Source On Resistance
VGS = VDS, ID = 250µA
2
-
-
4
V
VGS = 10V, ID = 75A
6.5
8.0
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
3650
980
135
160
86
4855
1305
205
208
112
9
pF
pF
pF
nC
nC
nC
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 20V
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Qg(tot)
Qg(10)
Qg(th)
Qgs
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
-
VDS = 30V
D = 75A
Ig = 1mA
I
7
-
-
17
-
Qgd
28
-
Switching Characteristics
tON
td(on)
tr
Turn-On Time
-
-
-
-
-
-
146
19
310
48
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
VDD = 30V, ID = 75A
126
61
262
130
48
V
GS =10V, RGEN = 3Ω
td(off)
tf
20
tOFF
80
178
Drain-Source Diode Characteristics
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 75A
-
-
-
-
1.25
V
79
-
-
ns
nC
VGS = 0V, ISD = 75A
dIF/dt = 100A/µs
Qrr
Reverse Recovery Charge
270
Notes:
o
1: L = 0.41mH, I = 75A, V = 50V, V = 10V, R = 25Ω, Starting T = 25 C
AS
DD
GS
G
J
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2
HUF75344A3 Rev. A1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
400
200
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
100
10
1
175oC
-55oC
100
25oC
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
10
2. 250µs Pulse Test
7
2
3
4
5
6
0.1
1
6
VGS,Gate-Source Voltage[V]
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
500
0.020
0.015
0.010
0.005
0.000
100
10
1
175oC
25oC
VGS = 10V
VGS = 20V
*Notes:
1. VGS = 0V
*Note: TJ = 25oC
2. 250µs Pulse Test
0.0
0.5
1.0
1.5
0
70
140
210
280
350
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
8000
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
VDS = 25V
VDS = 30V
VDS = 44V
= C
gd
8
6
4
2
0
6000
4000
2000
0
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
Coss
Crss
*Note: ID = 75A
80
0.1
1
10
25
0
20
40
60
100
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
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3
HUF75344A3 Rev. A1
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.5
0.0
0.9
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 250µA
2. ID = 75A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
160
500
50µs
100µs
120
80
40
0
100
1ms
Operation in This Area
10ms
is Limited by R DS(on)
10
DC
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
1
25
50
75
100
125
150
175
1
10
80
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
1
0.1
0.5
0.2
0.1
PDM
0.05
t1
t2
0.02
0.01
0.01
*Notes:
1. ZθJC(t) = 0.52oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
1E-3
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
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4
HUF75344A3 Rev. A1
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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5
HUF75344A3 Rev. A1
Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
HUF75344A3 Rev. A1
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
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7
HUF75344A3 Rev. A1
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As used herein:
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which, (a) are intended for surgical implant into the body or (b)
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properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury to the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild Semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
8
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HUF75344A3 Rev. A1
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