FQPF47P06YDTU [FAIRCHILD]
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET;
| 型号： | FQPF47P06YDTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总9页 (文件大小：1005K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2013
FQPF47P06 / FQPF47P06YDTU
P-Channel QFET® MOSFET
-60 V, -30 A, 26 mΩ
Description
Features
-30 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-15 A
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
•
•
•
•
•
Low Gate Charge (Typ. 84 nC)
Low Crss (Typ. 320 pF)
100% Avalanche Tested
175°C Maximum Junction Temperature Rating
S
!
●
●
G!
▶
▲
●
0F
G D
S
!
D
Absolute Maximum Ratings
T
= 25°C unless otherwise noted
C
Symbol
Parameter
FQPF47P06 / FQPF47P06YDTU
Unit
V
V
I
Drain-Source Voltage
-60
-30
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
-21.2
-120
± 25
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
820
mJ
A
AS
-30
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
6.2
mJ
V/ns
W
AR
dv/dt
-7.0
P
Power Dissipation (T = 25°C)
62
D
C
- Derate above 25°C
Operating and Storage Temperature Range
0.41
-55 to +175
W/°C
°C
T , T
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ
--
Max
2.42
62.5
Unit
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
°C/W
°C/W
θJC
θJA
--
www.fairchildsemi.com
©2001 Fairchild Semiconductor Corporation
FQPF47P06 / FQPF47P06YDTU Rev. C0
Elerical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
V
= 0 V, I = -250 µA
GS D
Drain-Source Breakdown Voltage
-60
--
--
--
--
V
DSS
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
I
= -250 µA, Referenced to 25°C
-0.06
V/°C
D
/
∆T
J
I
V
V
V
V
= -60 V, V = 0 V
--
--
--
--
--
--
--
--
-1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= -48 V, T = 150°C
-10
DS
GS
GS
C
I
= -25 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
-100
100
GSSF
DS
I
= 25 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = -250 µA
Gate Threshold Voltage
-2.0
--
--
-4.0
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= -10 V, I = -15 A
0.021 0.026
D
(Note 4)
g
= -30 V, I = -15 A
Forward Transconductance
--
19
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
2800
1300
320
3600
1700
420
pF
pF
pF
iss
V
= -25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
50
450
100
195
84
110
910
210
400
110
--
ns
ns
d(on)
V
= -30 V, I = -23.5 A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4, 5)
ns
Q
Q
Q
nC
nC
nC
g
V
V
= -48 V, I = -47 A,
DS
D
18
= -10 V
gs
gd
GS
(Note 4, 5)
44
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
-30
-120
-4.0
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = -30 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = -47 A,
130
0.55
ns
µC
rr
GS
S
(Note 4)
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.06mH, I = -30A, V = -25V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ -47A, di/dt ≤ 300A/µs, V
≤ BV Starting T = 25°C
SD
DD
DSS, J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
www.fairchildsemi.com
©2001 Fairchild Semiconductor Corporation
FQPF47P06 / FQPF47P06YDTU Rev. C0
Typical Characteristics
102
101
100
102
VGS
Top : - 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
101
℃
175
℃
25
℃
-55
※
Notes :
※
Notes :
100
1. VDS = -30V
μ
1. 250 s Pulse Test
μ
2. 250 s Pulse Test
℃
2. TC = 25
-1
10
10-1
100
101
2
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.10
102
101
100
0.08
0.06
0.04
0.02
0.00
VGS = - 10V
VGS = - 20V
℃
175
℃
25
※
Notes :
1. VGS = 0V
※
℃
Note : T = 25
J
μ
2. 250 s Pulse Test
-1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
-VSD , Source-Drain Voltage [V]
0
100
200
300
400
-ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
8000
7000
6000
5000
4000
3000
2000
1000
0
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
rss = C
C
C
gd
10
8
VDS = -30V
VDS = -48V
Coss
C
iss
※
Notes :
1. VGS = 0 V
2. f = 1 MHz
6
4
C
rss
2
※
Note : ID = -47 A
0
-1
100
101
0
10
20
30
40
50
60
70
80
90
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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©2001 Fairchild Semiconductor Corporation
FQPF47P06 / FQPF47P06YDTU Rev. C0
Typical Characteristics (Continued)
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes :
1. VGS = 0 V
2. ID = -250 μ A
0.9
0.8
※
Notes :
1. VGS = -10 V
2. ID = -23.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
30
25
20
15
10
5
Operation in This Area
is Limited by R DS(on)
102
100 µs
1 ms
10 ms
100 ms
101
100
DC
※
Notes :
1. TC = 25 o
2. TJ = 175 o
C
C
3. Single Pulse
-1
0
25
10
100
101
102
50
75
100
125
150
175
℃
TC, Case Temperature [
]
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 0
0 .2
0 .1
※
N o te s
1 . Z θ J C(t)
2 . D u ty F a c to r, D = t1 /t2
:
℃
/W M a x .
=
2 .4 2
3 . T J M
-
T C
=
P D
* Z θ J C(t)
M
0 .0 5
1 0-1
0 .0 2
0 .0 1
PDM
t1
t2
s in g le p u ls e
1 0-2
1 0 -5
1 0-4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
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©2001 Fairchild Semiconductor Corporation
FQPF47P06 / FQPF47P06YDTU Rev. C0
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
t on
t off
VDS
td(on)
tr
td(off)
tf
VDD
VGS
VGS
RG
10%
DUT
-10V
90%
VDS
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
ID
t p
Time
VDD
VDS (t)
RG
VDD
ID (t)
DUT
-10V
IAS
t p
BVDSS
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©2001 Fairchild Semiconductor Corporation
FQPF47P06 / FQPF47P06YDTU Rev. C0
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
_
I SD
L
Driver
RG
Compliment of DUT
(N-Channel)
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
Body Diode Reverse Current
IRM
I SD
( DUT )
di/dt
IFM , Body Diode Forward Current
VSD
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
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©2001 Fairchild Semiconductor Corporation
FQPF47P06 / FQPF47P06YDTU Rev. C0
Mechanical Dimensions
TO-220F
Dimensions in Millimeters
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©2001 Fairchild Semiconductor Corporation
FQPF47P06 / FQPF47P06YDTU Rev. C0
Mechanical Dimensions
TO-220F (Y-Forming)
Dimensions in Millimeters
www.fairchildsemi.com
©2001 Fairchild Semiconductor Corporation
FQPF47P06 / FQPF47P06YDTU Rev. C0
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intended to be an exhaustive list of all such trademarks.
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®*
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Current Transfer Logic™
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Programmable Active Droop™
QFET®
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Quiet Series™
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™
TINYOPTO™
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Marking Small Speakers Sound Louder ng our world, 1mW/W/kW at a time™
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and Better™
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®
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As used here in:
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
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©2001 Fairchild Semiconductor Corporation
FQPF47P06 / FQPF47P06YDTU Rev. C0
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