FQPF4N60 [TGS]
600V N-Channel MOSFET; 600V N沟道MOSFET
| 型号： | FQPF4N60 |
| 厂家： | 
Tiger Electronic Co.,Ltd |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总1页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIGER ELECTRONIC CO.,LTD
Product specification
FQPF4N60
600V N-Channel MOSFET
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using proprietary,planar,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switch mode power supplies.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Drain-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed
Gate-Source Voltage
Value Unit
l
VDSS
600
4.4
V
ID
IDM
VGSS
PD
A
A
17.6
30
V
±
Power Dissipation
106
150
W
oC
Tj
Max. Operating Junction Temperature
Storage Temperature
TO-220F
Tstg
-55~150 oC
( Ta = 25 OC)
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
BVDSS
IDSS
Test Conditions
Min.
Typ. Max. Unit
Drain-Source Breakdown Voltage
VGS = 0V, I =250 A
600
V
μ
—
—
—
D
Zero Gate Voltage Drain Current
VDS =600V, VGS =0V
VGS =30V, VDS =0V
VGS = -30V, VDS =0V
10
uA
—
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
5.0
nA
nA
V
—
—
—
—
VGS(th)
RDS(on)
VSD
Gate Threshold Voltage
VDS = VGS , I =250 A
3.0
μ
—
D
W
Static Drain-Source On-Resistance
Drain-Source Diode Forward Voltage
VGS = 10 V, ID = 2.2 A
VGS = 0 V, IS = 4.4 A
1.77
2.2
—
—
1.4
V
—
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