FQPF44N10 [FAIRCHILD]
100V N-Channel MOSFET; 100V N沟道MOSFET
| 型号： | FQPF44N10 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 100V N-Channel MOSFET |
| 文件： | 总8页 (文件大小：572K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
December 2000
TM
QFET
FQPF44N10
100V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
•
•
•
•
•
•
•
27A, 100V, R
= 0.039Ω @V = 10 V
DS(on) GS
Low gate charge ( typical 48 nC)
Low Crss ( typical 85 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
superior
switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
175°C maximum junction temperature rating
D
!
"
! "
"
!
G
"
G D
S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQPF44N10
Units
V
V
I
Drain-Source Voltage
100
27
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
19.1
108
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
± 25
530
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
27
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
5.5
mJ
V/ns
W
AR
dv/dt
6.0
P
Power Dissipation (T = 25°C)
55
D
C
- Derate above 25°C
Operating and Storage Temperature Range
0.37
-55 to +175
W/°C
°C
T , T
J
STG
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
T
300
°C
L
Thermal Characteristics
Symbol
Parameter
Typ
--
Max
2.73
62.5
Units
°C/W
°C/W
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
θJC
θJA
--
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
V
= 0 V, I = 250 µA
GS D
Drain-Source Breakdown Voltage
100
--
--
--
--
V
DSS
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
J
I
= 250 µA, Referenced to 25°C
0.1
V/°C
D
/
I
∆T
V
V
V
V
= 100 V, V = 0 V
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 80 V, T = 150°C
10
DS
GS
GS
C
I
I
= 25 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
GSSF
DS
= -25 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
2.0
--
--
4.0
0.039
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= 10 V, I = 13.5 A
0.03
26
D
g
= 40 V, I = 13.5 A
(Note 4)
Forward Transconductance
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
1400
425
85
1800
550
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
110
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
19
190
90
45
390
190
210
62
ns
ns
d(on)
V
= 50 V, I = 43.5 A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
100
48
ns
Q
Q
Q
nC
nC
nC
g
V
V
= 80 V, I = 43.5 A,
DS
D
9.0
24
--
= 10 V
gs
gd
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
27
108
1.5
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 27 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 43.5 A,
98
360
ns
nC
rr
GS
S
(Note 4)
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.09mH, I = 27A, V = 25V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 43.5A, di/dt ≤ 300A/µs, V ≤ BV
Starting T = 25°C
SD
DD
DSS,
J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
Typical Characteristics
102
101
100
10-1
102
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
℃
175
Bottom : 4.5 V
101
℃
25
℃
-55
※
Notes :
μ
※
Notes :
1. 250 s Pulse Test
1. VDS = 40V
℃
2. TC = 25
μ
2. 250 s Pulse Test
100
10
-1
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
102
101
100
0.15
0.12
0.09
0.06
0.03
0.00
VGS = 10V
VGS = 20V
※
Notes :
℃
175
℃
25
1. VGS = 0V
※
℃
Note : T = 25
μ
2. 250 s Pulse Test
J
-1
10
0
30
60
90
120
150
180
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
4000
3500
3000
2500
2000
1500
1000
500
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = C
C
gd
VDS = 50V
VDS = 80V
C
iss
※
Notes :
1. VGS = 0 V
2. f = 1 MHz
Coss
6
4
C
rss
2
※
Note : ID = 43.5A
40
0
10
0
-1
100
101
0
10
20
30
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
※
Notes :
1. VGS = 10 V
2. ID = 21.75 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
30
25
20
15
10
5
Operation in This Area
is Limited by R DS(on)
102
101
100
100 µs
1 ms
10 ms
100 ms
DC
※
Notes :
1. TC = 25 o
2. TJ = 175 o
C
C
3. Single Pulse
-1
0
25
10
100
101
102
50
75
100
125
150
175
℃
TC, Case Temperature [
]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 0
0 .2
0 .1
※
N o te s
1 . Z θ J C(t)
2 . D u ty F a c to r, D = t1 /t2
:
℃
/W M a x .
=
2 .7 3
3 . T J M
-
T C
=
P D
* Z θ J C(t)
M
0 .0 5
1 0-1
0 .0 2
PDM
0 .0 1
t1
t2
s in g le p u ls e
1 0-2
1 0 -5
1 0-4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
10V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
Package Dimensions
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. A, January 2000
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