FQD9N25TM [FAIRCHILD]
250V N-Channel MOSFET; 250V N沟道MOSFET
| 型号： | FQD9N25TM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 250V N-Channel MOSFET |
| 文件： | 总8页 (文件大小：752K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2011
®
QFET®
FQD9N25TM_F085
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7.4A, 250V, RDS(on)=0.42 @VGS=10V
Low gate charge (typical 15.5nC)
Low Crss (typical 15pF)
Fast switching
100% avalanche tested
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RoHS Compliant
Qualified to AEC Q101
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©2011 Fairchild Semiconductor Corporation
FQD9N25TM_F085 Rev.C
www.fairchildsemi.com
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1. Repetitive Rating : Pulse width limited by maximum junction temperature
,V
I
T = 25°C,L=4.8mH,
J
=7.4A,R =25ꢀ
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=50V during the inductor charging time and 0V during the time in avalanche
DD
2.
G
AS
3. I + 9.4A, di/dt + 300A/μs, V + BV
Starting
T = 25°C
SD
DD
DSS,
J
4. Pulse Test : Pulse width + 300μs, Duty cycle + 2%
5. Essentially independent of operating temperature
©2011 Fairchild Semiconductor Corporation
FQD9N25TM_F085 Rev.C
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ꢀꢁ
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢆꢉꢊꢋꢊꢌꢁꢍꢊꢎꢌꢅꢆꢉꢏꢊꢄꢊꢌꢍꢅꢄꢁꢐꢍꢁꢌꢐ
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©2011 Fairchild Semiconductor Corporation
FQD9N25TM_F085 Rev.C
ꢒ!"ꢚ ꢉꢌꢄꢇꢈꢉꢞꢉ ꢘꢋꢞꢚꢕꢘꢚ ꢕꢄꢀꢀꢀꢀꢓꢆꢌꢈꢍꢑꢈꢇꢊꢒꢖ
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##########################
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FQD9N25TM_F085 Rev.C
ꢞꢄꢉ ꢄꢘꢁꢆꢇꢊꢕꢁꢂꢈꢊꢍꢂꢈ
D - PAK
Dimensions in Millimeters
©2011 Fairchild Semiconductor Corporation
FQD9N25TM_F085 Rev.C
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Rev. I54
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