FQE10N20LC [FAIRCHILD]
200V Logic N-Channel MOSFET; LOGIC 200V N沟道MOSFET型号: | FQE10N20LC |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 200V Logic N-Channel MOSFET |
文件: | 总8页 (文件大小:895K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
QFET®
FQE10N20LC
200V Logic N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
Features
•
•
•
•
•
•
4.0A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
Low gate charge ( typical 14.5 nC)
Low Crss ( typical 44.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
D
{
●
◀
▲
●
●
{
G
TO-126
{
S
FQE Series
G D S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
VDSS
Parameter
FQE10N20LC
Units
V
A
A
A
Drain-Source Voltage
Drain Current
200
4
2.5
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
IDM
(Note 1)
Drain Current
16
VGSS
EAS
IAR
EAR
dv/dt
PD
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
± 20
320
4
1.28
5.5
V
mJ
A
mJ
V/ns
W
W/°C
°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
12.8
0.10
-55 to +150
TJ, TSTG
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Thermal Characteristics
Symbol
Parameter
Typ
--
--
Max
9.8
62.5
Units
°C/W
°C/W
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 µA
D = 250 µA, Referenced to 25°C
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
200
--
--
--
--
V
∆BVDSS
I
0.28
V/°C
/
∆TJ Coefficient
IDSS
V
V
DS = 200 V, VGS = 0 V
DS = 160 V, TC = 125°C
--
--
--
--
--
--
--
--
10
µA
µA
nA
nA
Zero Gate Voltage Drain Current
100
100
-100
IGSSF
IGSSR
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
1.0
--
--
0.29
0.32
2.0
0.36
0.39
V
Ω
S
V
V
GS = 10 V, ID = 2.0 A
GS = 5 V, ID = 2.0 A
Static Drain-Source
On-Resistance
gFS
VDS = 30 V, ID = 2.0 A
(Note 4)
Forward Transconductance
--
5.2
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
375
102
45.5
490
135
60
pF
pF
pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
16.5
220
80
110
14.5
1.6
45
450
170
230
19
ns
ns
ns
VDD = 100 V, ID = 9.5 A,
RG = 25 Ω
(Note 4, 5)
(Note 4, 5)
ns
Qg
Qgs
Qgd
nC
nC
nC
V
V
DS = 160 V, ID = 9.5 A,
GS = 5 V
--
--
9.5
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
--
163
0.89
4.0
16
1.5
--
A
A
V
ns
µC
ISM
VSD
trr
VGS = 0 V, IS = 4.0 A
GS = 0 V, IS = 9.5 A,
dIF / dt = 100 A/µs
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
(Note 4)
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 30mH, I = 4.0A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
DSS,
J
3. I ≤ 9.5A, di/dt ≤ 300A/µs, V ≤ BV
Starting T = 25°C
J
SD
DD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
Typical Characteristics
VGS
101
101
Top :
10.0 V
8.0 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
150oC
25oC
Bottom : 2.5 V
100
100
-55oC
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 30V
2. 250µ s Pulse Test
-1
-1
10
10
100
101
-1
0
2
4
6
8
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.0
101
0.8
0.6
0.4
0.2
0.0
VGS = 5V
100
VGS = 10V
150℃
25℃
※ Notes :
1. VGS = 0V
※ Note : T = 25℃
J
2. 250µ s Pulse Test
-1
10
0
5
10
15
20
25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1400
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + C
gd
VDS = 40V
VDS = 100V
Crss = Cgd
1200
1000
800
600
400
200
0
VDS = 160V
C
iss
6
Coss
C
4
rss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
2
※ Note : ID = 9.5A
0
-1
100
101
0
4
8
12
16
20
24
28
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
Typical Characteristics (Continued)
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes :
0.9
0.8
1. VGS = 0 V
※ Notes :
1. VGS = 10 V
2. ID = 2 A
2. ID = 250 µ A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
102
101
100
5
4
3
2
1
0
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
100 ms
DC
-1
※ Notes :
10
1. TC = 25 o
C
C
2. TJ = 150 o
3. Single Pulse
-2
10
100
101
102
25
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
1 0 1
D = 0 .5
0 .2
※
N o te s
:
1 0 0
1 0 -1
1 0 -2
1 . θ JC (t)
Z
= 9 .8 ℃ /W M a x.
0 .1
2 . D u ty F a c to r, D = t1 /t2
0 .0 5
3 . T JM
- T C = P D M * Z θ JC (t)
0 .0 2
0 .0 1
sin g le p u lse
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
1 0 2
t1 , S q u a re W a ve P u ls e D u ra tio n [se c ]
Figure 11. Transient Thermal Response Curve
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
5V
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
5V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
L
1
2
----
--------------------
BVDSS - VDD
EAS
=
LIAS
VDS
I D
2
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
VGS
( Driver )
--------------------------
Gate Pulse Period
D =
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
Package Dimensions
TO-126
8.00 ±0.30
3.25 ±0.20
ø3.20 ±0.10
(1.00)
(0.50)
0.75 ±0.10
1.75 ±0.20
1.60 ±0.10
0.75 ±0.10
#1
+0.10
–0.05
0.50
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I8
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