FQD16N25CTF_12 [FAIRCHILD]
250V N-Channel MOSFET; 250V N沟道MOSFET
| 型号： | FQD16N25CTF_12 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 250V N-Channel MOSFET |
| 文件： | 总8页 (文件大小：842K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2012
®
QFET
FQD16N25C
250V N-Channel MOSFET
tm
Features
Description
•
•
•
•
•
•
•
16A, 250V, RDS(on) = 0.27Ω @VGS = 10 V
Low gate charge ( typical 41 nC)
Low Crss ( typical 68 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switching DC/DC converters, switch mode power
supplies, DC-AC converters for uninterrupted power supplies
and motor controls.
D
D
G
D-PAK
FQD Series
G
S
S
Absolute Maximum Ratings
Symbol
Parameter
FQD16N25C
Units
V
VDSS
ID
Drain-Source Voltage
250
16
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
A
10.1
64
A
(Note 1)
IDM
Drain Current
A
VGSS
EAS
IAR
Gate-Source Voltage
± 30
432
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
16
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
160
mJ
V/ns
W
5.5
160
- Derate above 25°C
1.28
-55 to +150
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Thermal Characteristics
Symbol
Parameter
FQD16N25C
Units
°C/W
RθJC
RθJA
Thermal Resistance, Junction-to-Case
0.78
110
Thermal Resistance, Junction-to-Ambient
°C/W
©2012 Fairchild Semiconductor Corporation
FQD16N25C Rev. C0
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
FQD16N25C
Device
Package
D-PAK
Reel Size
380mm
Tape Width
16mm
Quantity
2,500
FQD16N25CTM
FQD16N25CTF
FQD16N25C
D-PAK
380mm
16mm
2,000
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
250
--
--
--
V
ΔBVDSS
ΔTJ
/
Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C
--
0.31
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
--
--
10
μA
μA
nA
nA
100
100
-100
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
2.0
--
--
4.0
0.27
--
V
Ω
S
Static Drain-Source On-Resistance
Forward Transconductance
VGS = 10 V, ID = 8A
0.22
10.5
VDS = 40 V, ID =8 A
(Note 4)
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
830
170
68
1080
220
89
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 125 V, ID = 16A,
RG = 25 Ω
--
--
--
--
--
--
--
ns
ns
15
130
135
105
41
40
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
270
280
220
ns
(Note 4, 5)
ns
Qg
VDS = 200 V, ID = 16A,
VGS = 10 V
nC
nC
nC
53.5
--
Qgs
Qgd
5.6
(Note 4, 5)
--
22.7
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
16
64
1.5
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 16 A
--
V
VGS = 0 V, IS = 16 A,
260
2.47
ns
dIF / dt = 100 A/μs
(Note 4)
Qrr
Reverse Recovery Charge
--
μC
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.7mH, I = 16A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 16A, di/dt ≤300A/μs, V ≤ BV Starting T = 25°C
DSS, J
SD
DD
4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2
www.fairchildsemi.com
FQD16N25C Rev. C0
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
101
101
150oC
Bottom : 4.5 V
25oC
-55oC
100
100
∝ Notes :
1. 250レs Pulse Test
2. TC = 25∩
∝ Notes :
1. VDS = 40V
2. 250レs Pulse Test
-1
-1
10
10
-1
100
101
2
4
6
8
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.5
101
1.0
VGS = 10V
100
0.5
150∩
25∩
VGS = 20V
∝ Notes :
1. VGS = 0V
∝ Note : T = 25∩
2. 250レs Pulse Test
J
-1
0.0
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
10
20
30
40
50
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3000
12
C
C
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
rss = Cgd
VDS = 50V
2500
2000
1500
1000
500
10
VDS = 125V
VDS = 200V
8
C
iss
6
4
C
oss
C
rss
∝ Notes :
1. VGS = 0 V
2. f = 1 MHz
2
∝ Note : ID = 15.6A
0
10
0
-1
100
101
0
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FQD16N25C Rev. C0
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
∝Notes :
1. VGS = 0 V
0.9
∝ Notes :
1. VGS = 10 V
2. ID = 8.9 A
0.5
2. ID = 250 レA
0.0
-100
0.8
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
20
15
10
5
Operation in This Area
is Limited by R DS(on)
102
10 μs
100 μs
1ms
101
100
10-1
10ms
100ms
DC
* Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
0
25
50
75
100
125
150
100
101
102
TC, Case Temperature [oC]
VDS, Drain-SourceVoltage[V]
Figure 11. Transient Thermal Response Curve
100
D=0.5
0.2
10-1
0.1
0.05
PDM
0.02
0.01
t1
t2
* Notes :
1. Z? (t) = 0.78 0C/W Max.
10-2
JC
single pulse
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z? (t)
JC
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
4
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FQD16N25C Rev. C0
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
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FQD16N25C Rev. C0
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
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FQD16N25C Rev. C0
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
7
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FQD16N25C Rev. C0
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Rev. I61
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8
FQD16N25C Rev. C0
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