FQA8N90C-F109 [FAIRCHILD]
N-Channel QFET® MOSFET 900 V, 8 A, 1.9 Ω; N沟道MOSFET QFET® 900 V， 8 A， 1.9 I©
| 型号： | FQA8N90C-F109 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel QFET® MOSFET 900 V, 8 A, 1.9 Ω |
| 文件： | 总8页 (文件大小：1081K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
December 2013
FQA8N90C_F109
®
N-Channel QFET MOSFET
900 V, 8 A, 1.9 Ω
Features
Description
•
•
•
•
•
8 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 4 V
Low Gate Charge (Typ. 35 nC)
Low Crss (Typ. 12 pF)
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
100% Avalanche Tested
RoHS Compliant
D
G
G
D
TO-3PN
S
S
T
C
= 25°C unless otherwise noted.
Absolute Maximum Ratings
Symbol
Parameter
FQA8N90C_F109
Unit
V
VDSS
Drain-Source Voltage
900
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
8.0
A
5.1
A
(Note 1)
IDM
Drain Current
32
A
VGSS
EAS
IAR
Gate-Source Voltage
± 30
850
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
8.0
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
24
mJ
V/ns
W
4.0
240
- Derate above 25°C
1.92
-55 to +150
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Thermal Characteristics
Symbol
Parameter
Unit
°C/W
°C/W
°C/W
FQA8N90C_F109
RθJC
RθCS
RθJA
Thermal Resistance, Junction-to-Case, Max.
0.52
0.24
40
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
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1
©2007 Fairchild Semiconductor Corporation
FQA8N90C_F109 Rev C1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FQA8N90C_F109
TO-3PN
Tube
N/A
N/A
30 units
FQA8N90C
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
900
--
--
--
--
V
∆BVDSS
∆TJ
/
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C
0.95
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 900 V, VGS = 0 V
VDS = 720 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
--
--
10
µA
µA
nA
nA
100
100
-100
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4.0 A
VDS = 50 V, ID = 4.0 A
3.0
--
--
5.0
1.9
--
V
Ω
S
Static Drain-Source On-Resistance
Forward Transconductance
1.6
5.5
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
1600
130
12
2080
170
15
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 450 V, ID = 11.0A,
RG = 25 Ω
--
--
--
--
--
--
--
ns
ns
40
110
70
70
35
10
14
90
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
230
150
150
ns
(Note 4)
(Note 4)
ns
Qg
VDS = 720 V, ID = 11.0A,
VGS = 10 V
nC
nC
nC
45
--
Qgs
Qgd
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
8.0
32.0
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 8.0 A
--
V
VGS = 0 V, IS = 8.0 A,
530
5.8
ns
dIF / dt = 100 A/µs
Qrr
Reverse Recovery Charge
--
µC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 25 mH, I = 8 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3.I ≤ 8 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
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2
©2007 Fairchild Semiconductor Corporation
FQA8N90C_F109 Rev C1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
V
Top : 15.0GVS
10.0V
8.0V
7.0V
6.5V
6.0V
101
101
Bottom: 5.5 V
150oC
100
-55oC
100
25oC
※Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※Notes :
1. VDS = 50V
2. 250µ s Pulse Test
-1
10
-1
10
-1
10
0
10
1
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
4.0
3.5
101
VGS = 10V
3.0
VGS = 20V
2.5
100
2.0
1.5
150℃
25℃
※Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※Note: T = 25℃
J
-1
1.0
10
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
V , Source-Drain voltage [V]
SD
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3000
12
Ciss = Cgs + Cgd (Cds = shorted)
C
C
oss = C + C
gd
rss = Cds
VDS = 180V
gd
2500
2000
1500
1000
500
10
VDS = 450V
VDS = 720V
C
8
iss
6
4
2
C
oss
※Notes :
1. VGS = 0 V
2. f = 1MHz
C
rss
※Note: ID = 8A
0
10
0
-1
0
10
1
10
0
5
10
15
20
25
30
35
40
Q , Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
G
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3
©2007 Fairchild Semiconductor Corporation
FQA8N90C_F109 Rev C1
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes:
1. VGS = 0 V
2. ID= 250 µ A
0.9
※Notes :
1. V = 10 V
2. IDG=S 4.0 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
8
Operation in This Area
is Limited by R DS(on)
102
10 µs
100 µs
1 ms
10 ms
DC
101
100
6
4
※Notes :
-1
10
1. TC = 25 oC
2
2. T = 150 oC
J
3. Single Pulse
-2
0
25
10
100
101
2
10
3
10
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
100
D = 0 .5
※
N otes
1. Z (t) = 0.52 ℃ /W M ax.
2. DθuJtCy Factor, D =t1/t2
:
0 .2
10-1
3. TJM - TC
= P DM * Zθ JC(t)
0 .1
0 .0 5
0 .0 2
PDM
t1
t2
0 .0 1
sin g le p u lse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, S quare W ave P ulse D uration [sec]
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4
©2007 Fairchild Semiconductor Corporation
FQA8N90C_F109 Rev C1
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
G
= const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
VGS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
VGS
VDD
VDS (t)
DUT
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
©2007 Fairchild Semiconductor Corporation
FQA8N90C_F109 Rev C1
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
©2007 Fairchild Semiconductor Corporation
FQA8N90C_F109 Rev C1
Mechanical Dimensions
Figure 16. TO3, 3-Lead, Plastic, EIAJ SC-65
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2007 Fairchild Semiconductor Corporation
FQA8N90C_F109 Rev C1
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Datasheet contains the design specifications for product development. Specifications
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Rev. I66
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©2007 Fairchild Semiconductor Corporation
FQA8N90C_F109 Rev C1
8
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