FQA90N15-F109 [ONSEMI]
N 沟道 QFET® MOSFET 150V,90A,18mΩ;![FQA90N15-F109](http://pdffile.icpdf.com/pdf2/p00361/img/icpdf/FQA90N15-F10_2213037_icpdf.jpg)
型号: | FQA90N15-F109 |
厂家: | ![]() |
描述: | N 沟道 QFET® MOSFET 150V,90A,18mΩ |
文件: | 总8页 (文件大小:1324K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FQA90N15-F109
®
N-Channel QFET MOSFET
Description
These N-Channel enhancement mode power field
effect transistors are produced using ON Semiconductor’s
proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for low
voltage applications such as audio amplifier, high efficiency
switching for DC/DC converters, and DC motor control,
uninterrupted power supply.
150 V, 90 A, 18 mΩ
Features
•
•
•
•
•
RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A
Low Gate Charge (Typ. 220 nC)
Low Crss (Typ. 200 pF)
100% Avalanche Tested
175°C Maximum Junction Memperature Rating
D
G
G
D
S
TO-3PN
S
T
C
= 25°C unless otherwise noted.
Absolute Maximum Ratings
Symbol
Parameter
FQA90N15_F109
Unit
VDSS
Drain-Source Voltage
Drain Current
150
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
90
63.5
A
A
(Note 1)
(Note 2)
IDM
Drain Current
- Pulsed
360
±25
1400
90
A
V
VGSS
EAS
IAR
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
(Note 1)
(Note 1)
(Note 3)
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
37.5
6.0
mJ
V/ns
(TC = 25°C)
- Derate Above 25°C
Power Dissipation
375
2.5
W
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +175
300
°C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
Thermal Characteristics
Symbol
Parameter
FQA90N15_F109
Unit
°C/W
°C/W
°C/W
RθJC
RθCS
RθJA
0.4
0.24
40
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
Publication Order Number:
1
©2000 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
FQA90N15-F109/D
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FQA90N15-F109
TO-3PN
Tube
N/A
N/A
30 units
FQA90N15
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Conditions
Min. Typ. Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
D = 250μA, Referenced to 25°C
150
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
I
0.15
V/°C
/
ΔTJ
IDSS
Zero Gate Voltage Drain Current
VDS = 150V, VGS = 0V
VDS = 120V, TC = 150°C
--
--
--
--
1
10
μA
μA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 25V, VDS = 0V
VGS = -25V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 45A
VDS = 40V, ID = 45A
2.0
--
--
0.014
68
4.0
0.018
--
V
Ω
S
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
6700
1400
200
8700
1800
260
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 75V, ID = 90A
--
--
--
--
--
--
--
105
760
470
410
220
43
220
1500
950
830
285
--
ns
ns
RG = 25Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4)
(Note 4)
ns
Qg
VDS = 120V, ID = 90A
VGS = 10V
nC
nC
nC
Qgs
Qgd
110
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
90
360
1.5
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 90A
--
V
VGS = 0V, IS = 90A
175
0.97
ns
μC
dIF/dt =100A/μs
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.29 mH, I = 90 A, V = 25 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3.I ≤ 90 A, di/dt ≤ 300 A/μs, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
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2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
102
102
Bottom : 4.5 V
101
100
10-1
175oC
25oC
101
-55oC
Notes :
1. VDS = 30V
Notes :
1. 250μs Pulse Test
2. TC = 25oC
2. 250μs Pulse Test
10-1
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
0.12
102
0.09
VGS = 10V
101
100
10-1
0.06
VGS = 20V
0.03
1o
0.4
25oC
Notes :
1. VGS = 0V
Note : TJ = 25oC
2. 250μs Pulse Test
0.00
0
50
100
150
200
250
300
0.0
0.8
1.2
1.6
2.0
2.4
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
18000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
VDS = 30V
Crss = Cgd
15000
10
VDS = 75V
VDS = 120V
12000
8
6
4
2
0
Ciss
Coss
9000
6000
Notes :
1. VGS = 0 V
Crss
2. f = 1 MHz
3000
Note : ID = 90 A
200
0
10-1
100
101
0
50
100
150
250
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Notes :
1. VGS = 0 V
0.9
Notes :
1. VGS = 10 V
2. ID = 250 μA
2. ID = 45 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
100
80
60
40
20
0
Operation in This Area
is Limited by R DS(on)
103
10 μs
100 μs
102
1 ms
10 ms
DC
101
100
Notes :
1. TC = 25 o
C
2. TJ = 175 o
C
3. Single Pulse
10-1
100
101
102
25
50
75
100
125
150
175
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
D = 0 .5
N o te s
1 . Z ? J C (t)
2 . D u ty F a c to r, D = t1 /t2
:
1 0 -1
0 .4 o C /W M a x .
0 .2
=
3 . T J M
-
T C
=
P D M * Z ? J C (t)
0 .1
0 .0 5
PDM
0 .0 2
0 .0 1
1 0 -2
t1
t2
s in g le p u s e
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
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4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
G
= const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
VGS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
VGS
VDD
VDS (t)
DUT
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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