FQA8N80C_07 [FAIRCHILD]
800V N-Channel MOSFET; 800V N沟道MOSFET
| 型号： | FQA8N80C_07 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 800V N-Channel MOSFET |
| 文件： | 总8页 (文件大小：793K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2007
®
QFET
FQA8N80C_F109
800V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
•
8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V
Low gate charge ( typical 35 nC)
Low Crss ( typical 13pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
TO-3PN
FQA Series
G D S
S
Absolute Maximum Ratings
Symbol
Parameter
FQA8N80C_F109
Units
V
VDSS
ID
Drain-Source Voltage
800
8.4
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
A
5.3
A
(Note 1)
IDM
Drain Current
33.6
± 30
850
A
VGSS
EAS
IAR
Gate-Source Voltage
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
8.4
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
22
mJ
V/ns
W
4.0
220
- Derate above 25°C
1.75
-55 to +150
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Thermal Characteristics
Symbol
Parameter
Typ
Max
0.57
--
Units
°C/W
°C/W
°C/W
RθJC
RθCS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
--
0.24
--
Thermal Resistance, Junction-to-Ambient
40
©2007 Fairchild Semiconductor Corporation
FQA8N80C_F109 Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQA8N80C
FQA8N80C_F109
TO-3PN
--
--
30
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
800
--
--
--
V
∆BVDSS
∆TJ
/
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C
--
1.02
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
--
--
10
µA
µA
nA
nA
100
100
-100
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4.2 A
VDS = 50 V, ID = 4.2 A
3.0
--
--
5.0
1.55
--
V
Ω
S
Static Drain-Source On-Resistance
Forward Transconductance
1.29
5.7
(Note 4)
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
1580
135
13
2050
175
17
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 400 V, ID = 8.0A,
--
--
--
--
--
--
--
ns
ns
40
110
65
70
35
10
14
90
RG = 25 Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
230
140
150
ns
(Note 4, 5)
ns
Qg
VDS = 640 V, ID = 8.0A,
GS = 10 V
nC
nC
nC
45
--
V
Qgs
Qgd
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
8.4
33.6
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 8.4 A
--
V
VGS = 0 V, IS = 8.4 A,
690
8.2
ns
dIF / dt = 100 A/µs
(Note 4)
Qrr
Reverse Recovery Charge
--
µC
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 22.6mH, I =8.4A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 8.4A, di/dt ≤200A/µs, V ≤ BV
Starting T = 25°C
J
SD
DD
DSS,
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2
www.fairchildsemi.com
FQA8N80C_F109 Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
V
Top : 15.0GVS
10.0V
8.0V
7.0V
6.5V
6.0V
101
101
150oC
Bottom: 5.5 V
-55oC
25oC
100
100
※Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※Notes :
1. VDS = 50V
2. 250µ s Pulse Test
-1
10
-1
10
-1
10
0
10
1
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
3.0
101
2.5
VGS = 10V
VGS = 20V
2.0
1.5
1.0
100
150℃
25℃
※Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※Note : T = 25℃
J
-1
10
0
4
8
12
16
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
V , Source-Drain voltage [V]
SD
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2500
12
Ciss = Cgs + Cgd (Cds = shorted)
C
C
oss = C + C
VDS = 160V
gd
rss = Cds
gd
10
8
VDS = 400V
VDS = 640V
C
2000
1500
1000
500
0
iss
C
oss
6
※Notes :
1. VGS = 0 V
2. f =1MHz
4
C
rss
2
※Note: ID = 8A
0
-1
1
10
100
0
10
20
30
40
10
Q , Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
G
3
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FQA8N80C_F109 Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes:
1. VGS = 0 V
2. ID= 250 µ A
0.9
※Notes :
1. V = 10 V
2. IDG=S 4.0 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
8
Operation in This Area
is Limited by R DS(on)
102
10 µs
100 µs
1 ms
10 ms
101
100
6
DC
4
-1
10
※Notes :
1. TC = 25 oC
2
2. T = 150 oC
J
3. Single Pulse
-2
0
25
10
0
1
10
102
103
50
75
100
125
150
10
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
100
D = 0 .5
0 .2
※
N otes
1. Z (t) = 0.57 ℃ /W M ax.
2. DθuJtCy Factor, D =t1/t2
:
10-1
0 .1
3. TJM - TC
=
P DM * Zθ JC(t)
0 .0 5
PDM
0 .0 2
0 .0 1
t1
t2
sin g le p u lse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, S quare W ave P ulse D uration [sec]
4
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FQA8N80C_F109 Rev. A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
www.fairchildsemi.com
FQA8N80C_F109 Rev. A
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
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FQA8N80C_F109 Rev. A
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
7
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FQA8N80C_F109 Rev. A
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Rev. I31
8
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FQA8N80C_F109 Rev. A
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