FQ1N50C [FAIRCHILD]
500V N-Channel MOSFET; 500V N沟道MOSFET
| 型号： | FQ1N50C |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 500V N-Channel MOSFET |
| 文件： | 总8页 (文件大小：1062K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2006
®
QFET
FQN1N50C
500V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
0.38 A, 500 V, RDS(on) = 6.0 Ω @ VGS = 10 V
Low gate charge ( typical 4.9 nC )
Low Crss ( typical 4.1 pF)
Fast switching
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
100 % avalanche tested
Improved dv/dt capability
D
G
TO-92
FQN Series
S
G D S
Absolute Maximum Ratings
Symbol
VDSS
Parameter
FQN1N50C
500
Units
V
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
0.38
A
0.24
A
IDM
Drain Current
(Note 1)
3.04
A
VGSS
EAS
IAR
Gate-Source Voltage
± 30
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
44.4
mJ
A
0.38
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C)
Power Dissipation (TL = 25°C)
- Derate above 25°C
0.21
mJ
V/ns
W
4.5
0.89
2.08
W
0.017
-55 to +150
300
W/°C
°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ
--
Max
60
Units
°C/W
RθJL
RθJA
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
(Note 6a)
(Note 6b)
--
140
°C/W
©2006 Fairchild Semiconductor Corporation
FQN1N50C Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
1N50C
FQN1N50C
TO-92
--
--
2000ea
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Drain-Source Breakdown Voltage
V
I
= 0 V, I = 250 µA
500
--
--
--
--
V
DSS
GS
D
∆BV
/
Breakdown Voltage Temperature
Coefficient
= 250 µA, Referenced to 25°C
0.5
V/°C
DSS
D
∆T
J
I
Zero Gate Voltage Drain Current
V
V
V
V
= 500 V, V = 0 V
--
--
--
--
--
--
--
--
50
µA
µA
nA
nA
DSS
DS
GS
= 400 V, T = 125°C
C
250
100
-100
DS
GS
GS
I
I
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 30 V, V = 0 V
DS
GSSF
= -30 V, V = 0 V
GSSR
DS
On Characteristics
Gate Threshold Voltage
V
V
V
= V , I = 250 µA
2.0
--
--
4.0
6.0
V
GS(th)
DS
GS
D
R
Static Drain-Source
On-Resistance
= 10 V, I = 0.19 A
4.6
Ω
DS(on)
GS
D
g
Forward Transconductance
V
= 40 V, I = 0.19A
(Note 4)
--
0.6
--
S
FS
DS
D
Dynamic Characteristics
C
C
C
Input Capacitance
V
= 25 V, V = 0 V,
--
--
--
150
28
195
40
--
pF
pF
pF
iss
DS
GS
f = 1.0 MHz
Output Capacitance
oss
rss
Reverse Transfer Capacitance
4.1
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
R
= 250 V, I = 1.0 A,
= 25 Ω
--
--
--
--
--
--
--
10
10
30
30
50
40
6.4
--
ns
ns
d(on)
DD D
G
r
20
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
15
ns
Q
Q
Q
V
V
= 400 V, I = 1.0 A,
D
= 10 V
4.9
0.66
2.9
nC
nC
nC
g
DS
GS
gs
gd
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
0.38
3.04
1.4
--
A
A
S
I
SM
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 0.38 A
--
V
SD
GS
S
t
= 0 V, I = 1.0 A,
188
0.55
ns
µC
rr
GS
S
dI / dt = 100 A/µs
(Note 4)
F
--
Q
Reverse Recovery Charge
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 80mH, I = 1.0A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 0.38A, di/dt ≤ 200A/µs, V ≤ BV Starting T = 25°C
DSS, J
SD
DD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
6. a) Reference point of the R
is the drain lead
JL
θ
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment
(R is the sum of the junction-to-case and case-to-ambient thermal resistance. R
is determined by the user’s board design)
CA
JA
θ
θ
2
www.fairchildsemi.com
FQN1N50C Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
100
10-1
10-2
100
150oC
Bottom : 4.5 V
25oC
-55oC
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
10-1
10-1
100
101
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
20
15
VGS = 10V
100
10
150℃
25℃
VGS = 20V
5
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : T = 25℃
J
-1
0
0.0
10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
10
8
400
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 100V
VDS = 250V
VDS = 400V
C
300
200
100
0
Coss
C
iss
* Note :
1. VGS = 0 V
2. f = 1 MHz
6
4
C
rss
2
※ Note : ID = 1A
0
10-1
100
101
0
1
2
3
4
5
6
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
www.fairchildsemi.com
FQN1N50C Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
※Notes :
1. VGS = 0 V
0.9
※ Notes :
1. VGS = 10 V
0.5
2. ID = 250 µ A
2. ID = 0.19 A
0.0
-100
0.8
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
101
0.4
10 µs
100 µs
100
0.3
0.2
0.1
0.0
1 ms
10 ms
100 ms
-1
10
Operation in This Area
is Limited by R DS(on)
DC
-2
10
※ Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
-3
10
100
101
102
103
25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [℃]
Figure 11. Transient Thermal Response Curve
102
101
100
10-1
D =0.5
0.2
0.1
PDM
0.05
t1
t2
0.02
0.01
※
N otes
1. Zθ JL(t) = 60 ℃ /W M ax.
2. D uty Factor, D t1/t2
3. TJM - TL P D M * Z qJC (t)
:
single pulse
=
=
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t1, S quare W ave P ulse D uration [sec]
4
www.fairchildsemi.com
FQN1N50C Rev. A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
www.fairchildsemi.com
FQN1N50C Rev. A
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
www.fairchildsemi.com
FQN1N50C Rev. A
Mechanical Dimensions
TO-92
+0.25
–0.15
4.58
0.46 0.10
+0.10
–0.05
1.27TYP
[1.27 0.20
1.27TYP
[1.27 0.20
0.38
]
]
3.60 0.20
(R2.29)
Dimensions in Millimeters
7
www.fairchildsemi.com
FQN1N50C Rev. A
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Definition
Advance Information
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This datasheet contains the design specifications for
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
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design.
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Obsolete
Full Production
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Not In Production
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18
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