FJP5200R [FAIRCHILD]
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN;
| 型号： | FJP5200R |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN 局域网 放大器 晶体管 |
| 文件： | 总5页 (文件大小：563K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2008
FJP5200
Audio Power Amplifier
Features
•
•
•
•
High Current Capability: IC = 15A
High Power Dissipation
Wide S.O.A
Complement to FJP1943
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol Parameter
Ratings
Units
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
230
230
V
5
15
V
A
IB
Base Current
1.5
A
TJ, TSTG
Junction and Storage Temperature
- 50 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation(TC=25°C)
Derate above 25°C
100
0.8
W
W/°C
RθJC
Thermal Resistance, Junction to Case
1.25
°C/W
* Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
* With infinite heatsink.
© 2008 Fairchild Semiconductor Corporation
FJP5200 Rev. A
www.fairchildsemi.com
1
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
Min.
230
230
5
Typ.
Max.
Units
V
BVCBO
IC=5mA, IE=0
BVCEO
BVEBO
ICBO
IC=10mA, RBE=∞
IE=5mA, IC=0
V
V
VCB=230V, IE=0
VEB=5V, IC=0
5.0
5.0
μA
μA
IEBO
Emitter Cut-off Current
hFE1
DC Current Gain*
VCE=5V, IC=1A
VCE=5V, IC=7A
IC=8A, IB=0.8A
VCE=5V, IC=7A
VCE=5V, IC=1A
VCB=10V, f=1MHz
55
35
160
hFE2
DC Current Gain
60
0.4
1.0
30
VCE(sat)
VBE(on)
fT
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
3.0
1.5
V
V
Current Gain Bandwidth Product
Output Capacitance
MHz
pF
Cob
360
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
*hFE Classification
Classification
R
O
hFE1
55 ~ 110
80 ~ 160
© 2008 Fairchild Semiconductor Corporation
FJP5200 Rev. A
www.fairchildsemi.com
2
Typical Characteristics
IB=200mA
IB = 180mA
IB = 160mA
16
14
12
10
8
Vce=5V
Tj=125?
Tj=25?
Tj=-25?
IB = 140mA
IB = 120mA
100
IB = 100mA
IB = 80mA
IB = 60mA
IB = 40mA
6
4
2
0
IB = 0
10
-2
-2
0
2
4
6
8
10
12
14
16
18
20
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Ic[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
Ic=10Ib
Ic=10Ib
1000
100
10
1000
Tj=-25?
Tj=25?
Tj=125?
Tj=25?
Tj=-25?
Tj=125?
0.1
1
10
0.1
1
10
Ic[A], COLLECTOR CURRENT
Ic[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
1.2
1.0
0.8
0.6
0.4
0.2
10
VCE = 5V
8
6
4
2
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
Case Temperature, TC[oC]
Figure 6. Thermal Resistance
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
© 2008 Fairchild Semiconductor Corporation
FJP5200 Rev. A
www.fairchildsemi.com
3
Mechanical Dimensions
TO220
© 2008 Fairchild Semiconductor Corporation
FJP5200 Rev. A
www.fairchildsemi.com
4
© 2008 Fairchild Semiconductor Corporation
FJP5200 Rev. A
www.fairchildsemi.com
5
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