FJP5304D [FAIRCHILD]
High Voltage High Speed Power Switch Application; 高压高速功率开关应用
| 型号： | FJP5304D |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | High Voltage High Speed Power Switch Application |
| 文件： | 总6页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FJP5304D
Equivalent Circuit
C
High Voltage High Speed Power Switch
Application
•
•
•
•
Wide Safe Operating Area
Built-in Free Wheeling diode
Suitable for Electronic Ballast Application
Small Variance in Storage Time
B
TO-220
1.Base 2.Collector 3.Emitter
1
E
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
700
CBO
CEO
EBO
400
V
12
V
I
I
I
I
4
A
C
8
A
CP
B
2
A
* Base Current (Pulse)
4
70
A
BP
P
Collector Dissipation (T =25°C)
W
°C
C
C
T
Storage Temperature
- 65 ~ 150
STG
* Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
Min.
Typ.
Max.
Units
BV
I
I
I
= 1mA, I = 0
700
400
12
V
V
CBO
CEO
EBO
C
C
E
E
BV
BV
= 5mA, I = 0
B
= 1mA, I = 0
V
C
I
I
I
V
V
V
= 700V, V = 0
100
250
100
mA
mA
mA
CES
CE
CE
EB
EB
Collector Cut-off Current
= 400V, IB = 0
CEO
EBO
Emitter Cut-off Current
= 12V, I = 0
C
h
DC Current Gain
V
V
= 5V, I = 10mA
10
8
FE
CE
CE
C
= 5V, I = 2A
40
C
V
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Internal Diode Forward Voltage Drop
I
I
I
= 0.5A, I = 0.1A
0.7
1.0
1.5
V
V
V
CE
BE
f
C
C
C
B
= 1A, I = 0.2A
B
= 2.5A, I = 0.5A
B
I
I
I
= 0.5A, I = 0.1A
1.1
1.2
1.3
C
C
C
B
= 1A, I = 0.2A
B
= 2.5A, I = 0.5A
B
I
= 2A
2.5
F
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
Electrical Characteristics (Continued) T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
TYP.
Max.
Units
Inductive Load Switching (V = 200V)
CC
t
Storage Time
Fall Time
I
V
= 2A, I = 0.4A
0.6
0.1
µs
stg
C
B1
(off) = -5V,
tf
BE
L = 200µH
Resistive Load Switching (V = 250V)
CC
t
Storage Time
I
= 2A, I = I = 0.4A
2.9
µs
stg
C
B1
B2
T
= 30µs
tf
Fall Time
P
0.2
* Pulse test: PW≤300µs, Duty cycle≤2%
Thermal Characteristics
Symbol
Parameter
Max.
1.78
62.5
Units
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
°C/W
°C/W
θJC
θJA
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
Typical Characteristics
5
4
3
2
1
0
100
10
1
Vce=5V
I
= 500mA
IB = 450mA
IB = 400mA
IB = 350mA
Ta=125oC
25oC
IBB = 300mA
IB = 250mA
IB = 200mA
-25oC
IB = 150mA
IB = 100mA
IB = 50mA
IB = 0
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC Current Gain
10
10
Ic=5IB
Ic=5IB
25OC
1
1
Ta=125OC
-25OC
25OC
Ta=125OC
-25OC
0.1
0.01
0.01
0.1
0.01
0.1
1
10
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
10
1000
VCC = 250V
IC = 5IB1 = -5IB2
tSTG
tSTG
1
100
tF
0.1
tF
VClamp = 200V,
VBE(OFF)=-5V, RBB=0 Ohm,
L=200 uH, IC = 5IB1
0.01
10
0.1
1
10
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 5. Resitive Load Switching Time
Figure 6. Inductive Load Switching Time
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
Typical Characteristics (Continued)
100
100
10
TC=25 o
C
Vcc=50V,
IB1=1A, IB2 = -1A
L = 1mH
10
1
1µs
10µs
1
1ms
DC
0.1
0.01
0.1
0.01
10
100
1000
10
100
1000
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Forward Bias Safe Operating Area
Figure 8. Reverse Bias Safe Operating Area
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 9. Power Derating
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
Package Dimensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ImpliedDisconnect™ PACMAN™
SPM™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™ FRFET™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
FACT Quiet series™ ISOPLANAR™
POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
GlobalOptoisolator™ MICROWIRE™
QS™
GTO™
HiSeC™
I2C™
MSX™
MSXPro™
OCX™
QT Optoelectronics™ TinyLogic®
Quiet Series™
TruTranslation™
RapidConfigure™
RapidConnect™
UHC™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I2
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