FGR15N40A [FAIRCHILD]
Strobe Flash N-Channel Logic Level IGBT; 频闪闪光N沟道逻辑电平IGBT
| 型号： | FGR15N40A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Strobe Flash N-Channel Logic Level IGBT |
| 文件： | 总6页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2005
FGR15N40A
Strobe Flash N-Channel Logic Level IGBT
Features
General Description
VCE(SAT) = 4.4V at IC=150A
This N-Channel IGBT is a MOS gated, logic level device
which has been especially tailored for camera flash applica-
tions where board space is a premium. These devices have
been designed to offer exceptional power dissipation in a
very small footprint for applications where bigger, more ex-
pensive packages are impractical. The gate is ESD protect-
ed with a zener diode.
tfl = 1.1µs, td(OFF)I = 0.46µs
2kV ESD Protected
High Peak Current Density
SuperSOT - 8 package, small footprint, low profile
(1mm thick)
Applications
Camera Strobe
Internal Diagram
C
C
C
C
G
Pin 1
E
E
E
SSOT-8
©2005 Fairchild Semiconductor Corporation
FGR15N40A Rev. A1
1
www.fairchildsemi.com
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCES
IC
Parameter
Collector to Emitter Breakdown Voltage
Ratings
Units
V
400
Collector Current Continuous(DC)
Collector Current Pulsed(100µs)
8
150
A
ICP
A
VGES
VGEP
PD
Gate to Emitter Voltage Continuous(DC)
Gate to Emitter Voltage Pulsed
±6
V
±8
V
Power Dissipation Total TC = 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Electrostatic Discharge Voltage at 100pF, 1500Ω
1.25
W
°C
°C
kV
TJ
-40 to 150
-40 to 150
2
TSTG
ESD
Package Marking and Ordering Information
Device Marking
Device
Package
Tape Width
Quantity
3000
15N40A
FGR15N40A
SuperSOT - 8
12mm
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BVCES
BVGES
ICES
IC = 1mA, VGE = 0V
Collector to Emitter Breakdown Voltage
Gate-Emitter Breakdown Voltage
400
±8
-
-
-
-
V
V
IGES = ± 1mA
VCE = 400V
C = +25oC
TC = +125oC
Collector to Emitter Leakage Current
-
-
10
µA
T
-
-
-
-
250
±10
µA
µA
IGES
VGE = ± 8V
Gate-Emitter Leakage Current
On State Characteristics
VCE(SAT)
IC = 150A, VGE = 4.0V (NOTE 1)
Collector to Emitter Saturation Voltage
-
4.4
6.0
V
Dynamic Characteristics
QG(ON)
VGEPL
VGE(TH)
CIES
IC = 150A, VCE = 300V, VGE = 8V
IC = 150A, VCE = 300V
Gate Charge
-
-
41
3.1
-
nC
V
Gate to Emitter Plateau Voltage
Gate to Emitter Threshold Voltage
Input Capacitance
-
0.75
-
IC = 1.0mA,VCE = VGE
0.4
-
0.61
1800
V
VCE = 10V, VGE = 0V, f = 1MHz
pF
Switching Characteristics
tON
VCE = 300V, IC = 150A,
VGE = 4V, RL = 2Ω,
Turn-On Time
-
-
-
-
-
-
0.91
0.18
0.73
1.56
0.46
1.1
-
-
-
-
-
-
µs
µs
µs
µs
µs
µs
td(ON)I
trI
Current Turn-On Delay Time
Current Rise Time
Turn-Off Time
RG = 51Ω, TJ = 25°C
tOFF
td(OFF)I
tfI
Current Turn-Off Delay Time
Current Fall Time
Thermal Characteristics
RθJA
-
80
-
°C/W
Thermal Resistance Junction-Case
SuperSOT - 8 (NOTE 2)
Notes:
1. Pulse Duration = 100µsec
2
2. Mounted on a 1 inch 1oz copper pad
2
www.fairchildsemi.com
FGR15N40A Rev. A1
Typical Characteristics
160
160
T
= -40°C
T = 25°C
J
J
140 PULSE DURATION = 100µs
140 PULSE DURATION = 100µs
120
100
80
60
40
20
0
120
100
80
60
40
20
0
Waveforms in
descending order
Waveforms in
descending order
V
V
V
V
= 6.0V
= 5.0V
= 4.0V
= 3.5V
V
V
V
V
= 6.0V
= 5.0V
= 4.0V
= 3.5V
GE
GE
GE
GE
GE
GE
GE
GE
1
1.5
2
2.5
3
3.5
4
4.5
5
1
1.5
2
2.5
3
3.5
4
4.5
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
Figure 1. Collector to Emitter On-State Voltage vs
Collector Current
Figure 2. Collector to Emitter On-State Voltage vs
Collector Current
160
160
T
= 70°C
T = 125°C
J
J
PULSE DURATION = 100µs
PULSE DURATION = 100µs
140
120
100
80
140
120
100
80
Waveforms in
Waveforms in
descending order
descending order
60
60
V
V
V
V
= 6.0V
= 5.0V
= 4.0V
= 3.5V
V
V
V
V
= 6.0V
= 5.0V
= 4.0V
= 3.5V
GE
GE
GE
GE
GE
GE
GE
GE
40
40
20
20
0
0
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 3. Collector to Emitter On-State Voltage vs
Collector Current
Figure 4. Collector to Emitter On-State Voltage vs
Collector Current
7
7
V
= 4V
V
= 4.5V
GE
GE
PULSE DURATION = 100µs
PULSE DURATION = 100µs
6
5
4
3
2
6
5
4
3
2
I
I
= 150A
= 120A
CE
CE
I
= 150A
= 120A
CE
I
CE
I
I
= 90A
= 60A
I
= 90A
= 60A
CE
CE
CE
I
CE
-40
-20
0
20
40
60
80
100 120 140
-40
-20
0
20
40
60
80
100 120 140
T
, CASE TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
C
C
Figure 5. Collector to Emitter Saturation Voltage
vs Case Temperature
Figure 6. Collector to Emitter Saturation Voltage
vs Case Temperature
3
www.fairchildsemi.com
FGR15N40A Rev. A1
Typical Characteristics (Continued)
7
7
6
5
4
3
2
DUTY CYCLE < 0.5%
DUTY CYCLE < 0.5%
PULSE DURATION = 100µs
PULSE DURATION = 100µs
o
o
T
= -40 C
T = 25 C
J
J
6
5
4
3
2
I
I
I
I
= 150A
= 120A
= 90A
CE
CE
CE
CE
I
I
I
I
= 150A
= 120A
= 90A
CE
CE
CE
CE
= 60A
= 60A
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
, GATE TO EMITTER VOLTAGE (V)
V
, GATE TO EMITTER VOLTAGE (V)
GE
GE
Figure 7. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Figure 8. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
8
9
DUTY CYCLE < 0.5%
DUTY CYCLE < 0.5%
PULSE DURATION = 100µs
o
PULSE DURATION = 100µs
o
8
T
= 70 C
T
= 125 C
7
6
5
4
3
2
J
J
I
I
I
I
= 150A
= 120A
= 90A
I
I
I
I
= 150A
= 120A
= 90A
CE
CE
CE
CE
CE
CE
CE
CE
7
6
5
4
3
2
= 60A
= 60A
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
V
, GATE TO EMITTER VOLTAGE (V)
V , GATE TO EMITTER VOLTAGE (V)
GE
GE
Figure 9. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Figure 10. Collector to Emitter On-State Voltage
vs Gate to Emitter Voltage
0.75
5000
I
V
= 1mA
= V
CE
FREQUENCY = 1MHz
CE
GE
0.7
0.65
0.6
C
IES
1000
C
OES
100
0.55
0.5
C
RES
0.45
0.4
10
4
-40
-20
0
20
40
60
80
100 120 140
0.1
1
10
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
100
T , CASE TEMPERATURE (°C)
V
C
Figure 11. Gate to Emitter Threshold Voltage vs
Case Temperature
Figure 12. Capacitance vs Collector to Emitter
Voltage
4
www.fairchildsemi.com
FGR15N40A Rev. A1
Typical Characteristics (Continued)
6
3
o
o
V
= 300V, V = 4V, R = 51Ω, T = 25 C
V
= 300V, I = 150A, V = 4V, T = 25 C
CC CE GE J
CC
GE
GE
J
t
off
t
fall
t
off
1
t
fall
1
t
on
t
t
on
rise
t
rise
0.1
0.5
0
25
50
75
100
125
150
0
50
100
150
200
250
300
R
, GATE RESISTANCE (Ω)
I
, COLLECTOR TO EMITTER CURRENT (A)
G
CE
Figure 13. Switching Time vs Collector Current
Figure 14. Switching Time vs Gate Resistance
8
160
T
= 25°C
o
J
I
= 1mA, V = 300V, R = 2Ω, T = 25 C
CC L J
G(REF)
PULSE DURATION = 100µs
7
6
5
4
3
2
1
0
140
120
100
80
60
40
20
0
0
5
10
15
20
25
30
35
40
45
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Q
, GATE CHARGE (nC)
V
GE
, GATE TO EMITTER VOLTAGE (V)
G
Figure 15. Gate Charge
Figure 16. Collector Current Limit vs Gate to
Emitter Voltage
2.0
1.0
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
t
1
P
D
t
2
DUTY FACTOR, D = t / t
1
2
SINGLE PULSE
PEAK T = (P X Z
X R ) + T
θJA C
J
D
θJA
0.001
-4
-3
-2
-1
0
1
10
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
Figure 17. Normalized Transient Thermal Impedance, Junction to Case
5
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FGR15N40A Rev. A1
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or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
6
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FGR15N40A Rev. A1
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