FGR3000CV-90DA [POWEREX]
HIGH POWER INVERTER USE PRESS PACK TYPE; 大功率逆变器使用压装型
| 型号： | FGR3000CV-90DA |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | HIGH POWER INVERTER USE PRESS PACK TYPE |
| 文件： | 总5页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS
FGR3000CV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
FGR3000CV-90DA
GATE (WHITE)
500 ± 8
AUXILIARY CATHODE
CONNECTOR (RED)
φ 3.5 DEPTH 2.2 ± 0.2
CATHODE
φ 85 ± 0.2
TYPE NAME
● ITQRM Repetitive controllable on-state current ...........3000A
● IT(AV) Average on-state current.......................900A
● VDRM Repetitive peak off state voltage ...................4500V
● Reverse conducting type
ANODE
φ 85 ± 0.2
φ 3.5 DEPTH 2.2 ± 0.2
φ 120 MAX
APPLICATION
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
90DA
4500
4500
2500
+
+
VDRM
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage+
V
V
V
VDSM
VD(DC)
+ : VGK = –2V
Symbol
ITQRM
IT(RMS)
IT(AV)
Parameter
Conditions
Ratings
3000
1410
900
Unit
A
Repetitive controllable on-state current VDM = 3375V, Tj = 125°C, CS = 3.5µF, LS = 0.2µH
RMS on-state current
A
Average on-state current
f = 60Hz, sine wave θ = 180°, Tf = 70°C
A
ITSM
Surge (non-repetitive) on-state current One half cycle at 60Hz
18
kA
A2s
A
2
IT t
I2t for fusing
One cycle at 60Hz
1.3 × 106
1100
700
IR(RMS)
IR(AV)
IRSM
RMS Reverse current
Average reverse current
f = 60Hz, sine wave θ = 180°, Tf = 70°C
A
22
2.0 × 106
Surge (non-repetitive) reverse current One half cycle at 60Hz
Current-squared, time integration One cycle at 60Hz
Critical rate of rise of on-state current VD = 2250V, IGM = 40A, Tj = 125°C
Peak forward gate voltage
kA
A2s
A/µs
V
2
IR t
500
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
10
Peak reverse gate voltage
18
V
Peak forward gate current
100
A
Peak gate reverse current
900
A
Peak forward gate power dissipation
400
W
kW
W
W
°C
°C
kN
g
27
Peak reverse gate power dissipation
Average forward gate power dissipation
100
Average reverse gate power dissipation
230
–40 ~ +125
–40 ~ +150
31 ~ 43
1450
Junction temperature
Tstg
Storage temperature
—
Mounting force required
Weight
Recommended value 37
Standard value
—
Aug.1998
MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS
FGR3000CV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min
—
Typ
—
—
—
—
—
—
Max
4.0
4.0
200
250
—
VTM
VRM
IDRM
IRG
On-state voltage
Peak reverse voltage drop
Tj = 125°C, ITM = 3000A, Instantaneous measurment
Tj = 125°C, IRM = 3000A, Instantaneous measurment
V
V
—
Repetitive peak off-state current Tj = 125°C, VDRM Applied, VGK = –2V
Tj = 125°C, VRG = 17V
Critical rate of rise of off-state voltage Tj = 125°C, VD = 2250V, VGK = –2V
—
mA
mA
—
Reverse gate current
dv/dt
tgt
1000
—
V/µs
Turn-on time
Tj = 125°C, ITM = 3000A, IGM = 40A, VD = 2250V
= 125°C, ITM = 3000A, VDM = 3375V, diGQ/d = –40A/µs
VRG = 17V, CS = 3.5 F, LS = 0.2
10
µs
T
j
t
tgq
Turn-off time
—
—
30
µs
µ
µH
IGQM
VGT
IGT
—
—
—
—
750
—
—
1.5
A
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
V
DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
—
3000
0.016
0.025
mA
GTO Side (Junction to fin)
Diode Side (Junction to fin)
—
°C/W
Rth(j-f)
Thermal resistance
PERFORMANCE CURVES
MAXIMUM ON-STATE AND MAXIMUM
REVERSE CHARACTERISTICS
RATED ON-STATE AND REVERSE
SURGE CURRENT
104
7
25
20
15
10
5
Tj = 125°C
5
3
2
103
7
5
3
2
DIODE PART
ON-STATE CHARACTERISTIC
(GTO PART)
102
7
5
3
2
GTO PART
REVERSE CHARACTERISTIC
(DIODE PART)
101
0
0
1
2
3
4
5
6
7
8
100
2
3
5 7 101
2
3
5 7 102
VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTICS
(JUNCTION TO FIN)
100 2 3 5 7 101
GATE CHARACTERISTICS
102
7
0.040
5
3
2
0.035
0.030
0.025
0.020
0.015
0.010
V
FGM = 10V
PFGM = 400W
DIODE PART
GTO PART
101
7
5
3
2
P
FG(AV) = 100W
V
GT = 1.5V
DIODE PART
100
7
5
3
2
T
j
= 25°C
0.005
0
I
GT = 3000mA
IFGM = 100A
GTO PART
10–1
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
GATE CURRENT (mA)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (S)
Aug.1998
MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS
FGR3000CV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(GTO PART, SINGLE-PHASE HALF WAVE)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(GTO PART, SINGLE-PHASE HALF WAVE)
130
5000
120
θ
θ
4000
3000
2000
1000
0
110
100
90
360°
360°
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
180°
120°
90°
60°
θ = 30°
80
70
θ = 30°
60° 90° 120° 180°
60
50
0
200
400
600
800
1000
0
200
400
600
800
1000
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(GTO PART, RECTANGULAR WAVE)
(GTO PART, RECTANGULAR WAVE)
5000
130
120
110
100
90
DC
θ
270°
4000
3000
2000
1000
0
360°
180°
RESISTIVE,
INDUCTIVE
LOAD
120°
90°
60°
θ = 30°
80
θ
70
360°
RESISTIVE,
INDUCTIVE
LOAD
60
θ = 30° 60° 90°
120°
180°
270° DC
50
0
300
600
900
1200 1500
0
300
600
900
1200 1500
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM REVERSE POWER DISSIPATION
CHARACTERISTIC
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE REVERSE CURRENT
(DIODE PART, SINGLE PHASE WAVE)
(DIODE PART, SINGLE PHASE HALF WAVE)
3000
130
RESISTIVE, INDUCTIVE LOAD
180° CONDUCTION
RESISTIVE, INDUCTIVE LOAD
180° CONDUCTION
120
110
100
90
2400
1800
1200
600
0
80
70
60
50
0
200
400
600
800
1000
0
250
500
750
1000
AVERAGE REVERSE CURRENT (A)
AVERAGE REVERSE CURRENT (A)
Aug.1998
MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS
FGR3000CV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(TYPICAL)
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
8000
7000
6000
5000
4000
3000
2000
1000
0
8.0
IT = 3000A
VD = 5~20V
IT = 25~200A
HALF SINE WAVE
VD = 2250V
7.0
diT/dt = 500A/µs
diG/dt = 20A/µs
Tj = 125°C
6.0
5.0
4.0
tgt
3.0
td
2.0
1.0
0
–60
–20
20
60
100
140
0
10 20 30 40 50 60 70 80 90 100
TURN ON GATE CURRENT (A)
JUNCTION TEMPERATURE (°C)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF GATE CURRENT
(TYPICAL)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
40
50
VD = 2250V
VDM = 3375V
diGQ/dt = –40A/µs
35
40
VRG = 17V
tgq
30
CS = 3.5µF
tgq
LS = 0.2µH
25
30
Tj = 125°C
20
ts
ts
VD = 2250V
20
15
VDM = 3375V
IT = 3000A
10
5
VRG = 17V
CS = 3.5µF
10
LS = 0.2µH
Tj = 125°C
0
0
0
500 1000 1500 2000 2500 3000 3500 4000
TURN OFF CURRENT (A)
0 10 20 30 40 50 60 70 80 90 100
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
800
700
600
500
400
300
900
VD = 2250V
VDM = 3375V
IT = 3000A
VRG = 17V
CS = 3.5µF
LS = 0.2µH
Tj = 125°C
VD = 2250V
VDM = 3375V
diGQ/dt = –40A/µs
VRG = 17V
CS = 3.5µF
LS = 0.2µH
850
800
750
Tj = 125°C
700
650
600
550
500
500
1000 1500 2000 2500 3000
TURN OFF CURRENT (A)
10
20
30
40
50
60
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
Aug.1998
MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS
FGR3000CV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN ON SWITCHING ENERGY
(MAXIMUM)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
3.0
2.5
2.0
1.5
1.0
0.5
16
V
I
d
C
R
D
= 2250V
GM = 40A
iG/d = 10A/µs
= 3.5µF
= 5Ω
V
V
D
= 2250V
DM = 3375V
= –40A/µs
RG = 17V
14
12
10
8
t
d
iGQ/dt
diT/d
t
= 300A/µs
200A/µs
S
V
S
LS
= 0.2µH
CS = 2.0µF
Tj = 125°C
T
j
= 125°C
3.5µF
6
100A/µs
4
2
0
500
1100 1700 2300 2900 3500
ON STATE CURRENT (A)
500
1000 1500 2000 2500 3000
TURN OFF CURRENT (A)
OFF STATE RECOVERY CHARGE,
OFF STATE RECOVERY TIME
VS. JUNCTION TEMPERATURE
OFF STATE RECOVERY CHARGE,
OFF STATE RECOVERY TIME
VS. REVERSE CURRENT
3
2
5
MAX.
d
T
i
/d
t = 100A/µs
MAX.
3
2
j = 125°C
103
7
5
103
7
5
AV.
I
d
T
RM = 1500A
/d = 100A/µs
= 125°C
3
2
AV.
i
t
3
2
Qdr
j
Q
dr
102
7
5
3
2
102
7
5
3
2
MAX.
AV.
t
dr
t
dr
101
7
5
MAX.
AV.
101
7
3
5
0
20 40 60 80 100 120 140
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
JUNCTION TEMPERATURE (°C)
REVERSE CURRENT (A)
OFF STATE RECOVERY CHARGE,
OFF STATE RECOVERY TIME
OFF STATE RECOVERY LOSS(DIODE PART)
VS. REVERSE CURRENT
VS. RATE OF DECREASE OF REVERSE CURRENT
(TYPICAL)
8
5
I
T
RM = 1500A
= 125°C
V
C
T
RM = 2250V
= 3.5µF
j = 125°C
3
2
j
MAX.
AV.
S
7
6
5
4
3
2
1
0
103
7
5
3
2
Q
dr
di/dt
= 300A/µs
100A/µs
102
7
5
3
2
t
dr
MAX.
AV.
101
7
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
500
1100 1700 2300 2900 3500
REVERSE CURRENT (A)
RATE OF DECREASE OF REVERSE CURRENT (A/µS)
Aug.1998
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