FDS6894 [FAIRCHILD]
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET; 双N沟道逻辑电平PWM优化的PowerTrench MOSFET
| 型号： | FDS6894 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| 文件： | 总5页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2001
FDS6894A
Dual N-Channel Logic Level PWM Optimized PowerTrenchÒ MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
·
8 A, 20 V.
RDS(ON) = 17 mW @ VGS = 4.5 V
RDS(ON) = 20 mW @ VGS = 2.5 V
RDS(ON) = 30 mW @ VGS = 1.8 V
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
·
·
Low gate charge (17 nC)
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
High performance trench technology for extremely
low RDS(ON)
·
High power and current handling capability
D1
5
6
7
8
4
3
2
1
D1
D2
Q1
Q2
D2
G1
SO-8
S1
G2
S2
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
20
V
V
A
VGSS
Gate-Source Voltage
± 8
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
8
32
PD
W
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
(Note 1a)
(Note 1b)
1.6
1
0.9
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RqJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
RqJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6894A
FDS6894A
13’’
12mm
2500 units
FDS6894A Rev C (W)
Ó2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250 mA
20
V
Breakdown Voltage Temperature
Coefficient
13
DBVDSS
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
1
mA
10
VDS = 16 V, VGS = 0 V, TJ = 55°C
nA
nA
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 8 V,
VDS = 0 V
100
VGS = – 8 V, VDS = 0 V
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS
,
ID = 250 mA
0.6
0.8
–3
1.5
V
Gate Threshold Voltage
Temperature Coefficient
DVGS(th)
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V, ID = 8 A
VGS = 2.5 V, ID = 7 A
VGS = 1.8 V, ID = 6 A
VGS = 4.5 V, ID = 8 A,TJ = 125°C
13
16
21
18
17
20
30
25
mW
ID(on)
gFS
On–State Drain Current
VGS = 4.5V, VDS = 5 V
16
A
S
Forward Transconductance
VDS = 5 V,
ID = 8 A
44
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1676
288
pF
pF
pF
VDS = 10 V, V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
146
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
10
14
33
12
17
2.8
3.3
20
25
53
22
24
ns
ns
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 W
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = 10 V, ID = 8 A,
VGS = 4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
0.7
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
a) 78°C/W when
mounted on a 0.5in2
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02
in2 pad of 2 oz
copper
c) 135°C/W when mounted on a
minimum mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDS6894A Rev C (W)
Typical Characteristics
50
2
1.8
1.6
1.4
1.2
1
VGS = 4.5V
2.5V
3.0V
40
2.0V
VGS = 1.8V
30
20
10
0
1.8V
2.0V
2.5V
3.0V
30
3.5V
4.5V
0.8
0
0.5
1
1.5
2
2.5
3
3.5
0
10
20
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DIRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.045
ID = 8A
VGS = 4.5V
ID = 4A
0.04
0.035
0.03
TA = 125oC
0.025
0.02
TA = 25oC
0.8
0.6
0.015
0.01
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
10
VGS = 0V
TA = -55oC
25oC
125oC
VDS = 5V
25
20
15
10
5
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0
0.0001
0.5
0.8
1.1
1.4
1.7
2
0
0.2
0.4
0.6
0.8
1
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6894A Rev C (W)
Typical Characteristics
5
2500
2000
1500
1000
500
ID = 8A
f = 1 MHz
VGS = 0 V
VDS = 5V
10V
4
3
2
1
0
15V
CISS
COSS
CRSS
0
0
5
10
15
20
0
5
10
15
20
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
SINGLE PULSE
100ms
RqJA = 135°C/W
1ms
10ms
TA = 25°C
RDS(ON) LIMIT
100ms
1s
10s
DC
1
VGS = 4.5V
SINGLE PULSE
0.1
0.01
R
qJA = 135oC/W
TA = 25oC
0.01
0.1
1
10
100
0.01
0.1
1
10
100
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
qJA(t) = r(t) * RqJA
R
qJA = 135oC/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6894A Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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